FDS7064A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS( ON) in a small package. • 19 A, 30 V RDS(ON) = 6.5 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • Fast switching • Synchronous rectifier • Bottomless SO-8 package: Enhanced thermal • DC/DC converter performance in industry-standard package size S D DS DS D DS Bottomless SO-8 5 Bottom -sid e Drain Con tact 4 6 3 7 2 8 1 G Pin 1 SO-8 S G SS S SS Absolute Maximum Ratings Symbol TA =25 oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±12 V ID Drain Current (Note 1a) 19 A PD Power Dissipation for Single Operation (Note 1a) 3.9 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C 38 °C/W 1 °C/W – Continuous – Pulsed 60 Thermal Characteristics RθJ A Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7064A FDS7064A 13’’ 12mm 2500 units 2000 Fairchild Semiconductor Corporation FDS7064A Rev A1(W) FDS7064A May 2000 ADVANCE INFORMATION Symbol Parameter T A = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V , VDS = 0 V –100 nA 2 V On Characteristics 30 V 20 mV/°C (Note 2) VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) ID(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current gFS Forward Transconductance VGS = 4.5 V, ID = 19 A VGS = 10 V, ID = 21 A VGS = 4.5 V, VDS = 5 V VDS = 10 V, 0.8 1.2 -4 mV/°C 6.5 5.5 50 ID = 19 A mΩ A 75 S 5070 pF 550 pF 230 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, V GS = 0 V, f = 1.0 MHz (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 17 25 ns 18 25 ns Turn–Off Delay Time 69 100 ns Turn–Off Fall Time 29 42 ns 33 46 nC VDS = 15 V, ID = 19 A, VGS = 4.5 V 7.5 nC 6.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 3.2 A Voltage (Note 2) 3.2 A 1.2 V Notes: 1. RθJA is the junction-to-ambient thermal resistance. RθJA depends on the user's board design. a) 38°C/W when mounted on a 1in 2 pad of 2 oz copper FDS7064A Rev A1(W) FDS7064A Electrical Characteristics FDS7064A Dimensional Outline and Pad Layout Bottom View Top View Minimum Recommended Landing Pattern Notes: Unless otherwise Specified a) All dimensions in mm b) Standard lead finish: 20 – 80 µ inches nickel / 6 µ inches palladium c) Chip Size Dimensional Table Chip Size X1 Y1 2.36 2.36 X2 Y2 0.75 0.67 FDS7064A Rev A1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E