FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 65 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) Applications • Low gate charge (33 nC typical) • DC/DC converter • High power and current handling capability D D G G S TO-252 S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±12 V ID Drain Current (Note 1a) 65 A W – Continuous – Pulsed PD (Note 1) 100 70 @ TA = 25°C (Note 1a) 3.2 @ TA = 25°C (Note 1b) Maximum Power Dissipation @ TC = 25°C TJ, TSTG Operating and Storage Junction Temperature Range 1.3 -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 1.8 °C/W (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6672A FDD6672A 13’’ 16mm 2500 units 2000 Fairchild Semiconductor Corporation FDD6672A Rev C (W) FDD6672A April 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA 2.0 V On Characteristics 30 V 20 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = 4.5 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, gFS Forward Transconductance VDS = 10 V, 0.8 ID = 13 A ID = 13 A, TJ=125°C ID = 14 A VDS = 5 V 1.2 -4 8.2 11.5 6.8 mV/°C 9.5 16 8 50 ID = 15 A mΩ A 75 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time VDS = 15 V, V GS = 0 V, f = 1.0 MHz 5070 pF 550 pF 230 pF (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 17 25 ns 18 25 ns ns td(off) Turn–Off Delay Time 69 100 tf Turn–Off Fall Time 29 42 ns Qg Total Gate Charge 33 46 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, ID = 15 A, VGS = 4.5 V 7.5 nC 6.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.7 A Voltage (Note 2) 0.7 2.7 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA= 40oC/W when mounted on a 1in2 pad of 2oz copper. b) RθJA= 96oC/W on a minimum mounting pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDD6672A Rev C(W) FDD6672A Electrical Characteristics FDD6672A Typical Characteristics 50 1.5 ID, DRAIN CURRENT (A) 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.0V 40 2.5V 30 2.0V 20 10 VGS = 2.5V 1.3 3.0V 1.1 3.5V 4.0V 4.5V 0.9 0 0 0.5 1 0 1.5 10 20 Figure 1. On-Region Characteristics. 50 60 0.025 ID = 15A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 ID = 6 A 0.02 0.015 TA = 125oC 0.01 TA = 25oC 0.005 0 150 0 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) 60 VDS = 5V ID, DRAIN CURRENT (A) 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 45 30 TA = 125oC 25oC 15 -55oC VGS = 0V 10 TA = 125oC 1 25oC -55oC 0.1 0.01 0.001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD6672A Rev C(W) FDD6672A Typical Characteristics 8000 ID = 12.5A f = 1MHz VGS = 0 V 10V CAPACITANCE (pF) VDS = 5V 4 15V 3 2 6000 CISS 4000 2000 1 COSS CRSS 0 0 0 10 20 30 40 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 1000 100 RDS(ON) LIMIT 100 100µs SINGLE PULSE RθJA = 96 °C/W TA = 25°C 80 1ms 10ms 100ms 10 60 1s 10s 1 0.1 40 DC VGS = 4.5V SINGLE PULSE 20 o RθJA = 96 C/W o TA = 25 C 0.01 0 0.1 1 10 100 0.01 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIE THERMAL RESISTANCE VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.1 R θJA(t) = r(t) + R θJA = 96 °C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * R θJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6672A Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Star* Power™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1