Si4542DY 30V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Q1: N-Channel RDS(on) = 28 mΩ @ VGS = 10V 6 A, 30 V RDS(on) = 35 mΩ @ VGS = 4.5V • Applications Q2: P-Channel –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V • DC/DC converter RDS(on) = 45 mΩ @ VGS = –4.5V • Power management DD2 DD2 D1 D DD1 G2 S2 G G1 S1 S S Drain-Source Voltage Gate-Source Voltage ID Drain Current 2 8 1 TA = 25°C unless otherwise noted Parameter VDSS VGSS 7 S Absolute Maximum Ratings Q1 - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) Q2 Units 30 –30 ±20 6 20 ±20 –6 –20 V V A 2 1.6 1.2 1 –55 to +175 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W (Note 1a) (Note 1b) (Note 1c) TJ, TSTG 3 Q1 Pin 1 SO-8 PD 4 6 SO-8 Symbol Q2 5 Operating and Storage Junction Temperature Range W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 4542 Si4542DY 13” 12mm 2500 units 2001 Fairchild Semiconductor International Si4542DY Rev A Si4542DY January 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = –24 V, VGS = 0 V VGS = +20 V, VDS = 0 V VGS = +20 V, VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 –30 VDS = VGS, ID = 250 µA VDS = VGS, ID = –250 µA Gate Threshold Voltage ID = 250 µA, Referenced to 25°C Temperature Coefficient ID = –250 µA, Referenced to 25°C Static Drain-Source VGS = 10 V, ID = 6 A On-Resistance VGS = 10 V, ID = 6 A, TJ = 125°C VGS = 4.5 V, ID = 5 A VGS = –10 V, ID = –6 A VGS = –10 V, ID = –6 A, TJ = 125°C VGS = –4.5 V, ID = –5 A On-State Drain Current VGS = 10 V, VDS = 5 V VGS = –10 V, VDS = –5 V Forward Transconductance VDS = 15 V, ID = 6 A VDS = –10 V, ID = –6 A Q1 Q2 Q1 Q2 Q1 1 –1 Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS V 23 –21 mV/°C 1 –1 +100 +100 µA nA (Note 2) Gate Threshold Voltage Q2 Q1 Q2 Q1 Q2 1.5 –1.7 –4 4 19 32 25 21 29 30 3 –3 V mV/°C 28 48 35 32 51 45 20 –20 mΩ A 18 16 S 830 1540 185 400 80 170 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = –15 V, VGS = 0 V, f = 1.0 MHz Electrical Characteristics Symbol Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd (continued) Gate-Drain Charge Q1 Q2 Q1 Q2 Q1 Q2 pF pF TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) Q1 VDS = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2 VDS = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω Q1 VDS = 15 V, ID = 7.5 A, VGS = 5 V Q2 VDS = –10 V, ID = –6 A, VGS = –5V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 6 13 10 22 18 47 5 18 9 15 2.8 4 3.1 5 12 24 18 35 29 75 12 30 13 20 ns ns ns ns nC nC nC Si4542DY Rev A Si4542DY Electrical Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) Voltage VGS = 0 V, IS = –1.3 A (Note 2) Q1 Q2 Q1 Q2 0.7 –0.7 1.3 –1.3 1.2 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°C/W when 2 mounted on a .02 in pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Si4542DY Rev A Si4542DY Drain-Source Diode Characteristics and Maximum Ratings TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Star* Power™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1