FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V). • –1.5 A, –20 V. RDS(ON) = 0.145 Ω @ VGS = –4.5 V RDS(ON) = 0.210 Ω @ VGS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package Applications • Load switch • Power management • DC/DC converter S D 1 6 2 5 3 4 D G Pin 1 SC70-6 D D Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current –1.5 A – Continuous (Note 1a) – Pulsed PD –6 Power Dissipation for Single Operation TJ, TSTG (Note 1a) 0.75 (Note 1b) 0.48 Operating and Storage Junction Temperature Range W -55 to +150 °C 260 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA (Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .28 FDG328P 7’’ 8mm 3000 units 2000 Fairchild Semiconductor International FDG328P Rev C(W) FDG328P October 2000 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA On Characteristics –20 V –9 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = –4.5 V, ID = –1.5 A ID = –1.2 A VGS = –2.5 V, VGS = –4.5 V, ID = –1.5 A, TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, –0.6 ID = –1.5 A –1.5 3 V mV/°C 120 169 156 145 210 203 –3 mΩ A 5 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, V GS = 0 V, f = 1.0 MHz 337 pF 88 pF 51 pF (Note 2) VDD = –10 V, ID = 1 A, VGS = –4.5 V, RGEN = 6 Ω VDS = –10 V, ID = –1.5 A, VGS = –4.5 V 9 18 ns 12 22 ns 10 20 ns 5 10 ns 3.7 6 nC 0.7 nC 1.3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.62 A (Note 2) –0.7 –0.62 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a.) 2 170°/W when mounted on a 1 in pad of 2 oz. copper. b.) 260°/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDG328P Rev C(W) FDG328P Electrical Characteristics FDG328P Typical Characteristics 2.5 6 -3.5V -ID, DRAIN CURRENT (A) 5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -2.5V -3.0V 4 3 -2.0V 2 -1.8V 1 2.25 VGS = -2.0V 2 1.75 -2.5V 1.5 -3.0V 1.25 -3.5V -4.5V 1 0.75 0 0 0.5 1 1.5 2 0 2.5 1 2 Characteristics 5 6 0.4 ID = -0.8 A ID = -1.5A VGS = -4.5V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4 Current 1.5 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 0.35 0.3 0.25 TA = 125oC 0.2 0.15 TA = 25oC 0.1 0.05 150 1.5 2 2.5 TJ, JUNCTION TEMPERATURE (oC) 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 TA = -55oC VDS = -5V -IS, REVERSE DRAIN CURRENT (A) 6 25oC 5 -ID, DRAIN CURRENT (A) 3 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 125oC 4 3 2 1 VGS = 0V 1 TA = 125oC 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Typical Characteristics FDG328P Rev C(W) 600 VDS = - ID = -1.5A f = 1MHz VGS = 0 V -10V 500 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1 400 CISS 300 200 COSS 100 CRSS 0 0 0 1 2 3 4 5 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 Figure 8. Capacitance Characteristics. 100 30 SINGLE PULSE RθJA = 260oC/W RDS(ON) LIMIT 10 24 100µs TA = 25oC POWER (W) 1ms 10ms 100ms 1 1s VGS = -4.5V SINGLE PULSE RθJA = 260oC/W 0.1 DC 18 12 6 TA = 25oC 0.01 0.1 1 10 100 0 0.0001 0.001 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA (t) = r(t) + R θJA R θJA = 260 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 T J - T A = P * R θJA (t) t2 Duty Cycle, D = t1 / t 2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDG328P Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G