BA 892 Silicon Rf Switching Diode Preliminary data • For VHF band switching 2 in TV / VTR tuners • Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Ordering Code Pin Configuration Package BA 892 A Q62702-A1214 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 35 V Forward current IF 100 mA Operating temperature range T op -55 ...+125 °C Storage temperature T stg -55 ...+150 Thermal Resistance Junction - ambient 1) RthJA ≤ 450 K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -03-1998 BA 892 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 20 µA VF - - 1 V DC characteristics Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 0.65 0.92 1.3 VR = 3 V, f = 1 MHz 0.6 0.85 1.1 Forward resistance Ω rf I F = 3 mA, f = 100 MHz - 0.45 0.7 I F = 10 mA, f = 100 MHz - 0.36 0.5 1/gp - 100 - kΩ Ls - 0.6 - nH Reverse resistance VR = 1 V, f = 100 MHz Series inductance Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -03-1998 BA 892 Diode capacitance CT = f (V R) f = 1MHz CT Forward resistance rf = f (I F) f = 100MHz EHD07009 2.0 pF EHD07010 10 1 rf Ω 1.6 1.2 10 0 0.8 0.4 0.0 0 10 20 V 10 -1 30 10 -1 10 0 10 1 mA 10 2 ΙF VR Forward current IF = f (V F) T A = 25°C 10 3 mA 10 2 10 1 10 0 10 -1 10 -2 0.5 0.6 0.7 0.8 0.9 V 1.1 VF Semiconductor Group Semiconductor Group 33 Au 1998-11-01 -03-1998