BAR80 Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 VSO05553 Type Marking BAR80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage VR 35 V Forward current IF 100 mA Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 1 Value Unit Aug-17-2001 BAR80 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 20 nA VF 0.8 - 1 V DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 1 1.6 VR = 3 V, f = 1 MHz 0.6 0.92 1.3 rf - 0.5 0.7 Ls - 0.14 - nH Shunt signal isolation SI - 23 - dB Shunt insertion loss IL - 0.15 - Forward resistance IF = 5 mA, f = 100 MHz Series inductance chip to ground Application information IF = 10 mA, f = 2 GHz, RG=RL =50 VR = 5 V, f = 2 GHz, RG=RL =50 Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF 2 Aug-17-2001 BAR80 Forward current IF = f (TS ) 160 mA IF 120 100 80 60 40 20 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f(tp ) IFmax / IFDC = f(tp) 10 2 10 3 IFmax / IFDC RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Aug-17-2001 BAR80 Forward resistance rf = f (IF ) Diode capacitance CT = f (VR) f = 1MHz f = 100MHz EHD07010 10 1 rf CT Ω EHD07009 2.0 pF 1.6 1.2 10 0 0.8 0.4 10 -1 10 -1 10 0 10 1 mA 0.0 10 2 ΙF 0 10 20 V 30 VR 4 Aug-17-2001