BAR 63 ... W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W VSO05561 BAR 63-06W Type Marking Ordering Code Pin Configuration Package BAR 63-04W G4s Q62702-A1261 1 = A1 2 = C2 3=C1/A2 SOT-323 BAR 63-05W G5s Q62702-A1267 1 = A1 2 = A2 3 = C1/2 BAR 63-06W G6s Q62702-A1268 1 = C1 2 = C2 3 = A1/2 Maximum Ratings Parameter Symbol Value Diode reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation, T S ≤ 105 °C Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top - 55 ...+150 Storage temperature Tstg - 55 ...+150 Unit Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA ≤ 340 RthJS ≤ 180 K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAR 63 ... W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 50 - - V IR - - 50 µA VF - 0.95 1.2 mV DC characteristics Breakdown voltage V(BR) I (BR) = 5 µA Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance pF CT VR = 0 V, f = 100 MHz - 0.3 - VR = 5 V, f = 1 MHz - 0.21 0.3 Forward resistance Ω rf I F = 5 mA, f = 100 MHz - 1.2 2 I F = 10 mA, f = 100 MHz - 1 - τrr - 75 - µs Ls - 1.4 - nH Charge carrier life time I F = 10 mA, I R = 6 mA, I R = 3 mA Series inductance Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAR 63 ... W Forward current IF = f (TA*;TS) * mounted on alumina 120 mA 100 TS 90 IF 80 TA 70 60 50 40 30 20 10 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 3 10 3 - IFmax / IFDC RthJS K/W 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 1 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Sep-07-1998 1998-11-01 BAR 63 ... W Diode capacitance CT = f (V R) f = 1MHz Forward resistance rf = f (I F) f = 100MHz EHD07139 0.5 EHD07138 10 2 rf C T pF Ω 0.4 10 1 0.3 0.2 10 0 0.1 0 0 Semiconductor Group Semiconductor Group 10 20 V VR 10 -1 -2 10 30 44 10 -1 10 0 10 1 mA 10 2 ΙF Sep-07-1998 1998-11-01