BAR 65-03W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communications transmit-receive switch Type Marking Ordering Code BAR 65-03WM/blue Q62702Q62702-A1047 Pin Configuration Package 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 30 V Forward current IF 100 mA Operating temperature range Top - 55 ... + 125 Storage temperature Tstg - 55 ... + 150 Semiconductor Group 1 °C Mar-04-1996 BAR 65-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR VR = 20 V, TA = 25 °C Forward voltage nA - - 20 VF IF = 100 mA V - 0.93 1 AC characteristics Diode capacitance CT pF VR = 1 V, f = 1 MHz - 0.6 0.9 VR = 3 V, f = 1 MHz - 0.57 0.8 Forward resistance Ω rf IF = 5 mA, f = 100 MHz - 0.65 0.95 IF = 10 mA, f = 100 MHz - 0.56 0.9 - 1.8 - Series inductance Ls Semiconductor Group 2 nH Mar-04-1996 BAR 65-03W Forward current IF = f (VF) Forward resistance rf = f(IF) f = 100MHz 10 3 3.0 Ω mA IF RF 10 2 2.4 2.2 2.0 1.8 1.6 10 1 1.4 1.2 1.0 10 0 0.8 0.6 0.4 10 0.2 0.0 -1 10 -1 400 500 600 700 800 mV 1000 VF Diode capacitance CT = f (VR) f = 1MHz 10 0 mA IF Diode capacitance CT = f (VR) f = 100MHz 1.0 1.0 pF pF CT CT 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0 1 2 3 4 5 6 7 8 V 10 VR Semiconductor Group Mar-04-1996 0 1 2 3 4 5 6 7 8 V VR 3 10