INFINEON BAR65-03

BAR 65-03W
Silicon RF Switching Diode
Preliminary data
• Low loss, low capacitance PIN-diode
• Band switch for TV-tuners
• Series diode for mobile communications
transmit-receive switch
Type
Marking Ordering Code
BAR 65-03WM/blue
Q62702Q62702-A1047
Pin Configuration
Package
1=C
SOD-323
2=A
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
VR
30
V
Forward current
IF
100
mA
Operating temperature range
Top
- 55 ... + 125
Storage temperature
Tstg
- 55 ... + 150
Semiconductor Group
1
°C
Mar-04-1996
BAR 65-03W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC characteristics
Reverse current
IR
VR = 20 V, TA = 25 °C
Forward voltage
nA
-
-
20
VF
IF = 100 mA
V
-
0.93
1
AC characteristics
Diode capacitance
CT
pF
VR = 1 V, f = 1 MHz
-
0.6
0.9
VR = 3 V, f = 1 MHz
-
0.57
0.8
Forward resistance
Ω
rf
IF = 5 mA, f = 100 MHz
-
0.65
0.95
IF = 10 mA, f = 100 MHz
-
0.56
0.9
-
1.8
-
Series inductance
Ls
Semiconductor Group
2
nH
Mar-04-1996
BAR 65-03W
Forward current IF = f (VF)
Forward resistance rf = f(IF)
f = 100MHz
10 3
3.0
Ω
mA
IF
RF
10 2
2.4
2.2
2.0
1.8
1.6
10 1
1.4
1.2
1.0
10
0
0.8
0.6
0.4
10
0.2
0.0
-1
10
-1
400
500
600
700
800
mV
1000
VF
Diode capacitance CT = f (VR)
f = 1MHz
10
0
mA
IF
Diode capacitance CT = f (VR)
f = 100MHz
1.0
1.0
pF
pF
CT
CT
0.8
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0
1
2
3
4
5
6
7
8
V
10
VR
Semiconductor Group
Mar-04-1996
0
1
2
3
4
5
6
7
8
V
VR
3
10