BAR 63-02W Silicon PIN Diode • PIN diode for high speed switching 2 of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance 1 • For frequencies up to 3 GHz VES05991 Type Marking Ordering Code Pin Configuration Package BAR 63-02W G 1=C SCD-80 Q62702-A1211 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation, T S = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ...+150 °C Storage temperature Tstg -55 ...+150 Value Unit Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA ≤ 220 RthJS ≤ 140 K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAR 63-02W Electrical Characteristics at TA = 25 =C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 50 - - V IR - - 10 µA VF - 0.95 1.2 V DC characteristics Breakdown voltage V(BR) I (BR) = 5 µA Reverse current VR = 35 V Forward voltage I F = 100 mA AC characteristics Diode capacitance pF CT VR = 0 V, f = 100 MHz - 0.3 - VR = 5 V, f = 1 MHz - 0.21 0.3 - 0.09 - Case capacitance CC f = 1 MHz Forward resistance Ω rf I F = 5 mA, f = 100 MHz - 1.2 2 I F = 10 mA, f = 100 MHz - 1 - τrr - 75 - µs Ls - 0.6 - nH Charge carrier life time I F = 10 mA, I R = 6 mA, I R = 3 mA Series inductance Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAR 63-02W Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 120 5 mA 100 TS 90 IF 80 TA 70 60 50 40 30 20 10 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 1 10 3 IFmax / IFDC RthJS K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Sep-07-1998 1998-11-01 BAR 63-02W Diode capacitance CT = f (V R) f = 1MHz Forward resistance rf = f(IF) f = 100MHz 10 3 0.6 Ohm pF 0.4 RF CT 10 2 10 1 0.3 0.2 10 0 0.1 0.0 0 5 10 15 20 V 10 -1 -2 10 30 VR 10 -1 10 0 10 1 10 2 mA 10 3 IF Forward current IF = f (V F) T A = 25°C 10 3 mA IF 10 2 10 1 10 0 10 -1 10 -2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0 VF Semiconductor Group Semiconductor Group 44 Sep-07-1998 1998-11-01