Mini PROFET® BSP 450 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads • Undervoltage shutdown • Maximum current internally limited • Electrostatic discharge (ESD) protection • Reverse battery protection1) 4 3 2 1 Package: SOT 223 Pins Type Ordering code BSP 450 Q67000-S266 1 2 3 4 OUT GND IN Vbb Maximum Ratings Parameter Supply voltage range Load current self-limited Maximum input voltage2) Maximum input current Inductive load switch-off energy dissipation single pulse IL = 0.5A , TA = 85°C Operating temperature range Storage temperature range Max. power dissipation (DC)3) TA = 25 °C Electrostatic discharge capability (ESD)4) Symbol Vbb IL VIN IIN EAS Thermal resistance chip - soldering point: chip - ambient3) Values -0.3...48 IL(SC) -5.0...Vbb ±5 0.5 Unit V A V mA J Tj Tstg Ptot VESD -40 ...+125 -55 ...+150 1.4 ±1 °C RthJS RthJA 7 70 + V bb Voltage Overvoltage Current Gate source protection limit protection Voltage Charge pump sensor Level shifter Rectifier R IN K/W 4 V Logic ESDDiode 3 W kV Limit for unclamped ind. loads OUT Temperature sensor 1 in Load ESD Logic MINI-PROFET GND 2 Signal GND Load GND 1) With resistor R GND=150 Ω in GND connection, resistor in series with IN connections reverse load current limited by connected load. 2) At V > V , the input current is not allowed to exceed ±5 mA. IN bb 3) BSP 450 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for V connection bb 4) HBM according to MIL-STD 883D, Methode 3015.7 Semiconductor Group 1 06.96 BSP 450 Electrical Characteristics Parameter and Conditions Symbol Values min typ max --1.7 0.16 --- 0.2 0.38 -- Ω ton toff --- 60 90 100 150 µs dV /dton -- 2 4 V/µs -dV/dtoff -- 2 4 V/µs VIN VIN(T+) -3.0 -- --- Vbb 3.0 V V VIN(T-) 1.82 -- -- V -20 0.1 -- --- V µA -- -- 110 µA 1.5 2.8 3.5 kΩ at Tj = 25 °C, Vbb = 24V unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 0.5 A, Vin = high Tj = 25°C Tj = 125°C 5) Nominal load current (pin 4 to 1) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 47 Ω Slew rate on 10 to 30% VOUT, RL = 47 Ω Slew rate off 70 to 40% VOUT, RL = 47 Ω Input Allowable input voltage range, (pin 3 to 2) Input turn-on threshold voltage Vbb = 18...30V Tj = -25...+125°C Input turn-off threshold voltage Vbb = 18...30V Tj = -25...+125°C Input threshold hysteresis Off state input current (pin 3) VIN(off) = 1.82 V Tj = -25...+125°C On state input current (pin 3) VIN(on) = 3.0 V to Vbb Tj = -25...+125°C Input resistance Tj = -25...+125°C 5) I RON IL(ISO) ∆VIN(T) IIN(off) IIN(on) RIN Unit L(ISO) characterizes the MOSFET part of the device and may be higher than the shortcircuit current IL(SC) of the whole device Semiconductor Group 2 A BSP 450 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 24V unless otherwise specified Operating Parameters Operating voltage Tj =-25...+125°C Undervoltage shutdown Tj =-25...+125°C Undervoltage restart Tj =-25...+125°C: Undervoltage hysteresis Standby current (pin 4), Vin = low Tj =-25...+100°C Tj =125°C6) Operating current (pin 2), Vin = high Tj =-25...+125°C leakage current (pin 1) Vin = low Tj =-25...+125°C Protection Functions Current limit (pin 4 to 1) Tj = 25°C Tj = -25...+125°C Overvoltage protection Ibb=4mA Tj =-25...+125°C Output clamp (ind. load switch off) at VOUT = Vbb - VON(CL), Ibb = 4mA Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation7) Tj Start = 85 °C, single pulse, IL = 0.5 A, Vbb = 12 V Reverse Battery Reverse battery voltage8) Continious reverse drain current Drain-Source diode voltage IF = 1 A, Vin = low TA = 25°C Vbb(on) Vbb(under) Vbb(u rst) ∆Vbb(under) Ibb(off) Values min typ 12 7 ---- ---0.4 10 IGND -- IL(off) 1 mA -- -- 2 µA 1.5 --72 2 2.4 --- A Vbb(AZ) VON(CL) 0.7 0.7 48 -- Tjt ∆Tjt EAS 135 --- 150 10 -- --0.5 °C K J --- 30 1 1.2 V A V IL(SC) -Vbb -IS -VON --- VOUT>Vbb 3 max 40 10.5 11 -25 50 1.6 6) increase of standby current at T = 125°C caused by temperature sense current j 7) while demagnetizing load inductance, dissipated energy is E = (V AS ∫ ON(CL) * iL(t) dt, 2 V ON(CL) ) approx. EAS= 1/2 * L * I * ( L VON(CL)-Vbb 8) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Semiconductor Group Unit V V V V µA V V BSP 450 Max allowable power dissipation Ptot = f (TA,TSP) Ptot [W] Current limit characteristic IL(SC) = f (Von) (Von see testcircuit) IL(SC) [A] 16 3.5 14 3 12 2.5 TS P 10 2 8 125°C 25°C -25°C 1.5 6 1 4 TA 0.5 2 0 0 0 25 50 75 100 125 0 5 10 15 20 25 Von [V] TA, TSP[°C] Typ. input current IIN = f(VIN); Vbb = 24 V IIN [µA] On state resistance (Vbb-pin to OUT pin) RON = f (Tj);Vbb = 24 V;IL = 0.5 A RON [Ω] 0.4 90 0.35 80 -25°C 70 25°C 0.3 60 0.25 125°C 98% 50 0.2 40 0.15 30 0.1 20 0.05 10 0 0 -50 -25 0 25 50 75 100 125 0 Tj [°C] Semiconductor Group 4 5 10 15 20 25 VIN [V] BSP 450 Typ. overload current IL(lim) = f (t), Vbb=24V, no heatsink, Param.:Tjstart IL(lim) [A] Typ. operating current IGND = f (Tj), Vbb=30V, VIN=high GND [mA] 1.6 1 1.4 0.8 1.2 1 0.6 0.8 -25°C 125°C 0.6 0.4 0.4 0.2 0.2 0 -20 0 20 40 60 80 0 -25 100 0 25 50 75 100 t [ms] Short circuit current IL(SC) = f (Tj);Vbb = 30 V; IL(SC) [Α] 125 Tj [°C] Typ. standby current Ibb(off) = f(Tj); Vbb = 30 V, VIN = low Ibb(off) [µA] 1.6 7 1.4 6 1.2 5 1 4 0.8 3 0.6 2 0.4 1 0.2 0 -25 0 25 50 75 100 0 -25 125 Tj [°C] Semiconductor Group 5 0 25 50 75 100 125 150 Tj [°C] BSP 450 Test circuit Typ. input turn on voltage threshold VIN(T+) = f (Tj) VIN(T+) [V] 3 18V 2.5 30V 2 1.5 1 0.5 0 -25 0 25 50 75 100 125 Tj [°C] Typ. on-state resistance (Vbb-Pin to OUT-Pin) RON = f (Vbb,IL); IL = 0.5A, Tj = 25 °C; RON [mΩ] 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25 30 35 40 45 Vbb [V] Semiconductor Group 6 BSP 450 Package: all dimensions in mm. SOT 223/4: Semiconductor Group 7