ISP 452 Smart Power High-Side-Switch for Industrial Applications Features • • • • • • • • • • • Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load Clamp of negative output voltage with inductive loads Undervoltage shutdown Maximum current internally limited Electrostatic discharge (ESD) protection 1 Reverse battery protection ) 4 3 2 1 Package: PG-SOT 223 Type Ordering code ISP 452 SP000219823 Application • µC compatible power switch for 12 V DC grounded loads for industrial applications • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays and discrete circuits General Description • N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protection functions. 1) With resistor RGND=150 Ω in GND connection, resistor in series with IN connections, reverse load current limited by connected load. Page 1 of 10 2006-03-01 ISP 452 Block diagram + Vbb IN R Overvoltage Current Gate source protection limit protection 4 V Logic ESDDiode 3 Voltage Voltage Charge pump sensor Level shifter Limit for unclamped ind. loads Rectifier OUT Temperature sensor 1 in ESD Load Logic GND MINI-PROFET 2 Signal GND Load GND Pin Symbol Function 1 OUT O Protected high-side power output 2 GND - Logic ground 3 IN I Input, activates the power switch in case of logical high signal 4 Vbb + Positive power supply voltage Page 2 2006-03-01 ISP 452 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage Load current self-limited 2) Maximum input voltage Maximum input current Inductive load switch-off energy dissipation, single pulse IL = 0.5A, Tj, start = 150°C (not tested, specified by design) Load dump protection3) VLoadDump = UA + Vs RI=2 Ω , td=400ms, IN= low or high, UA = 13.5 V (not tested, specified by design) RL= 24 Ω RL= 80 Ω Electrostatic discharge capability (ESD)5) PIN 3 PIN 1,2,4 Symbol Vbb IL VIN IIN EAS Junction Temperature Operating temperature range Storage temperature range Max. power dissipation (DC)6) TA = 25 °C Tj Ta Tstg Ptot chip - soldering point: chip - ambient:6) RthJS RthJA Thermal resistance Values 40 IL(SC) -5.0...Vbb ±5 0.5 VLoad dump4) Unit V A V mA J V 60 80 VESD ±1 ±2 150 -30 ...+85 -40 ...+105 1.8 kV 7 70 K/W °C W 2) At VIN > Vbb, the input current is not allowed to exceed ±5 mA. Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection. A resistor for the protection of the input is integrated. 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) HBM according to MIL-STD 883D, Methode 3015.7 6) Device on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection 3) Page 3 2006-03-01 ISP 452 Electrical Characteristics Parameter and Conditions Symbol min Values typ max --0.7 0.16 --- 0.2 0.4 -- Ω ton toff --- 60 60 100 150 µs dV /dton -- 2 4 V/µs -dV/dtoff -- 2 4 V/µs VIN VIN(T+) -3.0 -- --- Vbb 3.5 V V VIN(T-) 1.5 -- -- V ∆VIN(T) IIN(off) -10 0.5 -- -60 V µA IIN(on) 10 -- 100 µA RIN 1.5 2.8 3.5 kΩ at Tj = 25 °C, Vbb = 13.5V unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 0.5 A, Vin = high Tj = 25°C Tj = 150°C 7) Nominal load current (pin 4 to 1) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 24 Ω Slew rate on 10 to 30% VOUT, RL = 24 Ω Slew rate off 70 to 40% VOUT, RL = 24 Ω Input Allowable input voltage range, (pin 3 to 2) Input turn-on threshold voltage Tj = -40...+150°C Input turn-off threshold voltage Tj = -40...+150°C Input threshold hysteresis Off state input current (pin 3) VIN(off) = 1.2 V Tj = -40...+150°C On state input current (pin 3) VIN(on) = 3.0 V to Vbb Tj = -40...+150°C Input resistance 7) RON IL(ISO) Unit A IL(ISO) is limited by current limitation, see IL(SC) Page 4 2006-03-01 ISP 452 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 13.5V unless otherwise specified Operating Parameters 8 Operating voltage ) Undervoltage shutdown Undervoltage restart Tj =-40...+150°C Tj =-40...+150°C Tj =-40...+25°C Tj =+150°C Undervoltage restart of charge pumpe see diagram page 9 Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C Overvoltage restart Tj =-40...+150°C Overvoltage hysteresis Tj =-40...+150°C Standby current (pin 4), Vin = low Tj =-40...+150°C Operating current (pin 2), Vin = 5 V Leakage current (pin 1) Vin = low Tj =-40...+25°C Tj =150°C 8) min Vbb(on) Vbb(under) Vbb(u rst) Values typ 5.0 3.5 -- ---- Vbb(ucp) -- ∆Vbb(under) Vbb(over) Vbb(o rst) ∆Vbb(over) Ibb(off) IGND IL(off) Unit max V V V 5.6 34 5 6.5 7.0 7 -- 0.3 -- V 34 33 ----- --0.7 10 1 2 42 --25 1.6 5 7 V V V µA mA µA V At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V Page 5 2006-03-01 ISP 452 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 13.5V unless otherwise specified Protection Functions Current limit (pin 4 to 1) Tj = 25°C Vbb = 20V Tj = -40...+150°C Overvoltage protection Ibb=4mA Tj =-40...+150°C Output clamp (ind. load switch off) at VOUT=Vbb-VON(CL), Ibb = 4mA Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation9) Tj, start = 150 °C, single pulse, IL = 0.5 A, Vbb = 12 V (not tested, specified by design) Reverse battery (pin 4 to 2) 10) (not tested, specified by design) min IL(SC) Values typ Unit max 1.5 --47 2 2.4 --- A Vbb(AZ) VON(CL) 0.7 0.7 41 41 Tjt ∆Tjt EAS 150 --- -10 -- --0.5 °C K J -Vbb -- -- 30 V V V 9) While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx. 2 V ) EAS= 1/2 * L * IL * (V ON(CL) ON(CL) - Vbb 10) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) has to be limited by the connected load. Page 6 2006-03-01 ISP 452 Max. allowable power dissipation Ptot = f (TA,TSP) Current limit characteristic IL(SC) = f (Von); (Von see terms schematic below) Ptot [W] IL(SC) [A] 18 2 16 1.8 1.6 14 1.4 12 TSP 10 150°C 1.2 25°C 1 -40°C 8 0.8 6 0.6 4 0.4 TA 2 0.2 0 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 TA, TSP[°C] 14 Von [V] On state resistance (Vbb-pin to OUT-pin) RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A Typ. input current IIN = f (VIN); Vbb = 13.5 V RON [Ω] IIN [µA] 50 0.4 -40°C 45 0.35 40 +25°C 0.3 35 98% 0.25 30 +150°C 25 0.2 20 0.15 15 0.1 10 0.05 5 0 0 -50 -25 0 25 50 75 0 100 125 150 Tj [°C] Page 7 2 4 6 8 10 12 14 VIN [V] 2006-03-01 ISP 452 Typ. operating current IGND = f (Tj); Vbb = 13.5 V; VIN = high Typ. overload current IL(lim) = f (t); Vbb = 13.5 V, no heatsink, Param.: Tjstart IGND [mA] IL(lim) [A] 0.8 1.4 0.7 1.2 0.6 1 0.5 0.8 +150°C 0.4 +25°C -40°C 0.6 0.3 0.4 0.2 0.2 0.1 0 0 -50 -25 0 25 50 75 100 125 150 -50 0 50 100 150 200 250 300 350 400 Tj [°C] t [ms] Typ. standby current Ibb(off) = f (Tj); Vbb = 13.5 V; VIN = low Short circuit current IL(SC) = f (Tj); Vbb = 13.5 V Ibb(off) [µA] IL(SC) [A] 8 1.4 7 1.2 6 1 5 0.8 4 0.6 3 0.4 2 0.2 1 0 -50 0 -50 -25 0 25 50 75 100 125 150 Tj [°C] Page 8 -25 0 25 50 75 100 125 150 Tj [°C] 2006-03-01 ISP 452 Figure 6: Undervoltage restart of charge pumpe Typ. input turn on voltage threshold VIN(T+) = f (Tj); VIN(T+) [V] VON [V] 3 13V 2.5 2 V 1.5 bb(over) V 1 V V 0.5 V bb(o rs t) bb(u rs t) bb(u c p) bb(under) 0 -50 -25 0 25 50 75 100 125 150 Vbb [V] Tj [°C] Typ. on-state resistance (Vbb-Pin to Out-Pin) RON = f (Vbb,IL); IL=0.5A, Tj = 25°C charge pump starts at Vbb(ucp), about 5.6 V typ. Terms RON [mΩ] 300 250 200 150 100 50 0 0 5 10 15 20 25 Vbb [V] Page 9 2006-03-01 ISP 452 Package: all dimensions in mm. PG-SOT 223: Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 10 2006-03-01