miniPROFET® BSP 452 • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads • Undervoltage shutdown • Maximum current internally limited • Electrostatic discharge (ESD) protection 1 • Reverse battery protection ) SOT-223 1 SOT-223 Package: SOT 223 Type Ordering code BSP 452 Q67000-S271 Application • µC compatible power switch for 12 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Blockdiagramm: + Vbb Voltage Overvoltage Current Gate source protection limit protection V Logic ESDDiode Voltage Charge pump sensor Level shifter Rectifier 3 R IN 4 Limit for unclamped ind. loads OUT Temperature sensor 1 in Load ESD Logic GND miniPROFET 2 Signal GND 1) Load GND With resistor RGND=150 Ω in GND connection, resistor in series with IN connections reverse load current limited by connected load. Data Book 1 20.08.96 miniPROFET® BSP 452 Pin Symbol Function 1 OUT O Output to the load 2 GND - Logic ground 3 IN I Input, activates the power switch in case of logical high signal 4 Vbb + Positive power supply voltage Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage Load current self-limited 2) Maximum input voltage Maximum input current Inductive load switch-off energy dissipation, single pulse IL = 0.5A , TA = 150°C (not tested, specified by design) 3 Load dump protection ) VLoadDump=UA+Vs RL= 24Ω RI=2Ω , td=400ms, IN= low or high, UA=13,5V RL= 80Ω (not tested, specified by design) Electrostatic discharge capability (ESD)5) PIN 3 PIN 1,2,4 Symbol Vbb IL VIN IIN EAS Operating temperature range Storage temperature range 6 Max. power dissipation (DC) ) TA = 25 °C Tj Tstg Ptot chip - soldering point: chip - ambient:6) RthJS RthJA Thermal resistance VLoad dump4) VESD Values 40 IL(SC) -5.0...Vbb ±5 0.5 Unit V A V mA J 60 80 V ±1 ±2 -40 ...+150 -55 ...+150 1.8 kV 7 70 K/W °C W 2) At VIN > Vbb, the input current is not allowed to exceed ±5 mA. Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection A resistor for the protection of the input is integrated. 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) HBM according to MIL-STD 883D, Methode 3015.7 6) BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection 3) Data Book 2 20.08.96 miniPROFET® BSP 452 Electrical Characteristics Parameter and Conditions Symbol Values typ max --- 0.16 -- 0.2 0.4 Ω 0.7 -- -- A ton toff --- 60 60 100 150 µs dV /dton -- 2 4 V/µs -dV/dtoff -- 2 4 V/µs VIN VIN(T+) -3.0 -- --- Vbb 3.5 V V VIN(T-) 1.5 -- -- V ∆VIN(T) IIN(off) -10 0.5 -- -60 V µA IIN(on) 10 -- 100 µA RIN 1.5 2.8 3.5 kΩ at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 0.5 A, Vin = high Tj = 25°C Tj = 150°C 7) Nominal load current (pin 4 to 1) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 24 Ω Slew rate on 10 to 30% VOUT, RL = 24 Ω Slew rate off 70 to 40% VOUT, RL = 24 Ω Input Allowable input voltage range, (pin 3 to 2) Input turn-on threshold voltage Tj = -40...+150°C Input turn-off threshold voltage Tj = -40...+150°C Input threshold hysteresis Off state input current (pin 3) VIN(off) = 1.2 V Tj = -40...+150°C On state input current (pin 3) VIN(on) = 3.0 V to Vbb Tj = -40...+150°C Input resistance 7) RON IL(ISO) Unit IL(ISO) is limited by current limitation, see IL(SC), next page Data Book 3 20.08.96 miniPROFET® BSP 452 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min Operating Parameters Operating voltage8) Undervoltage shutdown Undervoltage restart Tj =-40...+150°C Tj =-40...+150°C Tj =-40...+25°C Tj =+150°C Undervoltage restart of charge pumpe see diagram page 77 Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C Overvoltage restart Tj =-40...+150°C Overvoltage hysteresis Tj =-40...+150°C Standby current (pin 4), Vin = low Tj =-40...+150°C Operating current (pin 2), Vin = 5 V leakage current (pin 1) Vin = low Tj =-40...+25°C Tj =150°C Protection Functions Current limit (pin 4 to 1) Tj = 25°C Vbb = 20V Tj = -40...+150°C Overvoltage protection Ibb=4mA Tj =-40...+150°C Output clamp (ind. load switch off) at VOUT=Vbb-VON(CL), Ibb = 4mA Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation9) Tj Start = 150 °C, single pulse, IL = 0.5 A, Vbb = 12 V (not tested, specified by design) 10 Reverse battery (pin 4 to 2) ) Vbb(on) Vbb(under) Vbb(u rst) Values typ 5.0 3.5 -- ---- Vbb(ucp) -- ∆Vbb(under) Unit max V V V 5.6 34 5 6.5 7.0 7 -- 0.3 -- V Vbb(over) Vbb(o rst) ∆Vbb(over) Ibb(off) IGND IL(off) 34 33 ----- --0.7 10 1 2 42 --25 1.6 5 7 V V V µA mA µA IL(SC) 1.5 --47 2 2.4 --- A Vbb(AZ) VON(CL) 0.7 0.7 41 41 Tjt ∆Tjt EAS 150 --- -10 -- --0.5 °C K J -Vbb -- -- 30 V V (not tested, specified by design) 8) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx. 2 V EAS= 1/2 * L * IL * (V ON(CL) ) ON(CL) - Vbb 10) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. 9) Data Book 4 20.08.96 V V miniPROFET® BSP 452 Max. allowable power dissipation Ptot = f (TA,TSP) Current limit characteristic IL(SC) = f (Von); (Von see testcircuit) Ptot [W] IL(SC) [A] 18 2 16 1.8 1.6 14 1.4 12 TSP 150°C 1.2 25°C 1 -40°C 10 8 0.8 6 0.6 4 0.4 TA 2 0.2 0 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 TA, TSP[°C] Von [V] On state resistance (Vbb-pin to OUT-pin) RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A Typ. input current IIN = f (VIN); Vbb = 13,5 V RON [Ω] IIN [µA] 0.4 14 50 -40°C 45 0.35 40 + 25°C 0.3 35 98% 0.25 +150°C 30 0.2 25 20 0.15 15 0.1 10 0.05 5 0 0 -50 -25 0 25 50 75 0 100 125 150 Tj [°C] Data Book 5 2 4 6 8 10 12 14 VIN [V] 20.08.96 miniPROFET® BSP 452 Typ. operating current IGND = f (Tj); Vbb = 13,5 V; VIN = high Typ. overload current IL(lim) = f (t); Vbb = 13,5 V, no heatsink, Param.: Tjstart IGND [mA] IL(lim) [A] 0.8 1.4 0.7 1.2 0.6 1 0.5 0.8 +150°C 0.4 +25°C -40°C 0.6 0.3 0.4 0.2 0.2 0.1 0 0 -50 -25 0 25 50 75 100 125 150 -50 0 50 100 150 200 250 300 350 400 Tj [°C] t [ms] Typ. standby current Ibb(off) = f (Tj); Vbb = 13,5 V; VIN = low Short circuit current IL(SC) = f (Tj); Vbb = 13,5 V Ibb(off) [µA] IL(SC) [A] 8 1.4 7 1.2 6 1 5 0.8 4 0.6 3 0.4 2 0.2 1 0 -50 0 -50 -25 0 25 50 75 100 125 150 Tj [°C] Data Book 6 -25 0 25 50 75 100 125 150 Tj [°C] 20.08.96 miniPROFET® BSP 452 Typ. input turn on voltage threshold VIN(T+) = f (Tj); Figure 6: Undervoltage restart of charge pumpe VIN(T+) [V] VON [V] 3 13V 2.5 2 V bb(over) 1.5 V 1 V bb(o rs t) bb(u rs t) V 0.5 bb(u c p) V bb(under) 0 -50 -25 0 25 50 75 100 125 150 Vbb [V] Tj [°C] charge pump starts at Vbb(ucp) about 7 V typ. Test circuit Typ. on-state resistance (Vbb-Pin to Out-Pin) RON = f (Vbb,IL); IL=0.5A, Tj = 25°C RON [mΩ] 300 250 200 150 100 50 0 0 5 10 15 20 25 Vbb [V] Data Book 7 20.08.96 mini PROFET® BSP 452 Package: all dimensions in mm. SOT 223/4: Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. 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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 8 20.08.96