DISCRETE SEMICONDUCTORS DATA SHEET BSP108 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION BSP108 QUICK REFERENCE DATA N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers. Drain-source voltage VDS max. 80 V Gate-source voltage (open drain) ± VGSO max. 20 V Drain current (DC) ID max. 500 mA Total power dissipation up to Tamb = 25 °C Ptot max. 1.5 W RDS(on) typ. max. 2.0 Ω 3.0 Ω min. typ. 150 mS 300 mS Drain-source ON-resistance FEATURES ID = 500 mA; VGS = 10 V • Direct interface to C-MOS, TTL, etc. • High-speed switching Transfer admittance Yfs ID = 500 mA; VDS = 15 V • No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP108 PIN CONFIGURATION d 4 handbook, halfpage g 1 Top view 2 s 3 MAM054 Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP108 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 80 V Gate-source voltage (open drain) ± VGSO max. 20 V Drain current (DC) ID max. 500 mA Drain current (peak) IDM max. 1.0 A Total power dissipation up to Tamb = 25 °C (note 1) Ptot max. 1.5 W Storage temperature range Tstg −65 to + 150 °C Junction temperature Tj max. Rth j-a = 150 °C THERMAL RESISTANCE From junction to ambient (note 1) 83.3 K/W Note 1. Device mounted on an epoxy printed-circuit board 40 mm × 40 mm × 1.5 mm; mounting pad for the collector lead min. 6 cm2. CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage ID = 10 µA; VGS = 0 V(BR) DSS min. 80 V VGS (th) min. max. 1.5 V 3.5 V IGSS max. 100 nA IDSS max. 1.0 µA RDS(on) typ. max. 2.0 Ω 3.0 Ω Yfs min. typ. 150 mS 300 mS Ciss typ. max. 45 pF 60 pF Coss typ. max. 30 pF 45 pF Gate threshold voltage ID = 1 mA; VGS = VDS Gate-source leakage current ± VGS = 20 V; VDS = 0 Drain-source leakage current VDS = 60 V; VGS = 0 Drain-source ON-resistance ID = 500 mA; VGS = 10 V Transfer admittance ID = 500 mA; VDS = 15 V Input capacitance at f = 1 MHz; VDS = 10 V; VGS = 0 Output capacitance at f = 1 MHz; VDS = 10 V; VGS = 0 April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP108 Feedback capacitance at f = 1 MHz; VDS = 10 V; VGS = 0 Crss typ. max. 8 pF 12 pF ton typ. max. 4 ns 8 ns toff typ. max. 10 ns 15 ns Switching times (see Figs 2 and 3) ID = 500 mA; VDD = 50 V VGS = 0 to 10 V VDD = 50 V handbook, halfpage handbook, halfpage 90 % INPUT 10 % 90 % 10 V 0V ID OUTPUT 50 Ω 10 % MSA631 ton toff MBB692 Fig.2 Switching times test circuit. April 1995 Fig.3 Input and output waveforms. 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor MDA724 103 handbook, halfpage VGS = MDA725 1.2 handbook, halfpage 6V 5V 10 V BSP108 ID (A) ID 4V (mA) 0.8 102 0.4 10 0 0 2 4 6 8 10 RDSon (Ω) 0 Fig.4 Tj = 25 °C; typical values. 4 6 8 10 VGS (V) Fig.5 Tj = 25 °C; typical values at VDS = 10 V. MDA726 1.2 handbook, halfpage VGS = 10 V 2 handbook, 6V MBB693 2 Ptot ID (A) (W) 1.6 0.8 5V 1.2 0.8 0.4 4V 0.4 3V 0 0 0 2 4 6 8 10 VDS (V) 0 Fig.6 Tj = 25 °C; typical values. April 1995 50 100 150 200 Tamb (°C) Fig.7 Power derating curve. 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor MDA728 3 BSP108 handbook, halfpage k k 2.5 1.1 2 1 1.5 0.8 1 0.8 0.5 −50 MDA729 1.2 handbook, halfpage 0 50 100 Tj (°C) 0.7 −50 150 0 50 100 Tj (°C) Fig.9 Fig.8 R DS on at T j k = ----------------------------------------- ; R DS on at 25 °C V GS (th) at T j k = ------------------------------------------- ; V GS (th) at 25 °C typical values at 500 mA/10 V. VGS(th) at 1 mA; typical values. MDA730 120 handbook, halfpage C (pF) 80 Ciss 40 Coss Crss 0 0 10 20 VDS (V) 30 Fig.10 Tj = 25 °C; VGS = 0; f = 1 MHz; typical values. April 1995 6 150 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP108 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 April 1995 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP108 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 8 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 9 BSP108 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 10 BSP108 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 11 BSP108 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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