STMICROELECTRONICS 2N3055

2N3055
MJ2955
®
COMPLEMENTARY SILICON POWER TRANSISTORS
■
■
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY NPN-PNP DEVICES
DESCRIPTION
The 2N3055 is a silicon Epitaxial-Base Planar
NPN transistor mounted in Jedec TO-3 metal
case.
It is intended for power switching circuits, series
and shunt regulators, output stages and high
fidelity amplifiers.
The complementary PNP type is MJ2955.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CBO
Collector-Base Voltage (I E = 0)
V CER
V CEO
Collector-Emitter Voltage (R BE ≤ 100Ω)
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
IC
Collector Current
IB
Base Current
P tot
T stg
Tj
Total Dissipation at T c ≤ 25 o C
Storage Temperature
Max. Operating Junction Temperature
Value
NPN
2N3055
PNP
MJ2955
Unit
100
V
70
V
60
V
7
V
15
A
7
A
115
W
-65 to 200
o
C
200
o
C
For PNP types voltage and current values are negative.
August 1999
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2N3055 / MJ2955
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
1.5
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CEX
Collector Cut-off
Current (V BE = -1.5V)
V CE = 100 V
V CE = 100 V
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 30 V
IEBO
Emitter Cut-off Current
(I C = 0)
V EB = 7 V
Min.
T j = 150 o C
Typ.
Max.
Unit
1
5
mA
mA
0.7
mA
5
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 200 mA
60
V
VCER(sus) ∗ Collector-Emitter
Sustaining
Voltage (R BE = 100 Ω)
I C = 200 mA
70
V
VCE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 4 A
I C = 10 A
I B = 400 mA
I B = 3.3 A
V BE ∗
Base-Emitter Voltage
IC = 4 A
V CE = 4 A
h FE ∗
DC Current Gain
IC = 4 A
I C = 10 A
V CE = 4 A
V CE = 4 A
20
5
fT
Transition frequency
I C = 0.5 A
V CE = 10 V
3
MHz
Is/b ∗
Second Breakdown
Collector Current
V CE = 40 V
2.87
A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
2/4
1
3
V
V
1.8
V
70
2N3055 / MJ2955
TO-3 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
A
P
C
O
N
B
V
E
G
U
D
R
P003F
3/4
2N3055 / MJ2955
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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