BD439/BD440 BD441/BD442 ® COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in power linear and switching applications. The complementary PNP types are BD440, and BD442 respectively. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN PNP V CBO V CES V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t ≤ 10 ms) Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature BD439 BD440 60 60 60 Unit BD441 BD442 80 80 80 5 4 7 1 36 -65 to 150 150 V V V V A A A W o C o C For PNP types voltage and current values are negative. December 2000 1/4 BD439/BD440/BD441/BD442 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.5 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CBO Collector Cut-off Current (I E = 0) Parameter for BD439/440 for BD441/442 V CB = 60 V V CB = 80 V 100 100 µA µA I CES Collector Cut-off Current (V BE = 0) for BD439/440 for BD441/442 V CB = 60 V V CB = 80 V 100 100 µA µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE ∗ h FE ∗ Test Conditions I C = 100 mA for DB439/440 for BD441/442 Collector-Emitter Saturation Voltage IC = 2 A I B = 0.2 A Base-Emitter Voltage I C = 10 mA IC = 2 A V CE = 5 V V CE = 1 V I C = 10 mA V CE = 5 V for BD439/440 for BD441/442 VCE = 1 V for BD439/440 for BD441/442 V CE = 1 V for BD439/440 for BD441/442 DC Current Gain I C = 500 mA IC = 2 A h FE1 /h FE2 ∗ Matched Pair fT Transition frequency I C = 500 mA V CE = 1 V I C = 250 mA V CE = 1 V * Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % 2/4 Min. Typ. 60 80 V V 0.8 V 1.5 V V 0.58 20 15 130 130 40 40 140 140 25 15 1.4 3 MHz BD439/BD440/BD441/BD442 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G H 0.087 4.65 0.163 3.8 3 0.183 0.150 3.2 0.118 2.54 0.126 0.100 H2 c1 0016114 3/4 BD439/BD440/BD441/BD442 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4