MJE172 MJE182 ® COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN MJE182 PNP MJE172 80 80 Unit V CEO Collector-Emitter Voltage (I B = 0) V CBO Collector-Base Voltage (I E = 0) 100 100 V V EBO Base-Emitter Voltage (I C = 0) 7 7 V Collector Current 3 3 A Collector Peak Current 6 6 A Base Current 1 1 A 12.5 12.5 W IC I CM IB P tot Total Power Dissipation at T case ≤ 25 o C September 1998 V 1/4 MJE172 - MJE182 THERMAL DATA R thj-amb R thj-case Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max o 83.4 10 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CBO Collector Cut-off Current (I E = 0) Parameter V CB = rated V CBO T CASE = 150 o C 0.1 0.1 µA mA I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V 0.1 µA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage Test Conditions I C = 10 mA Min. Typ. 80 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 0.5 A I C = 1.5 A IC = 3 A I B = 50 mA I B = 0.15 A I B = 0.6 A 0.3 0.9 1.7 V V V V BE(sat) ∗ Base-Emitter on Voltage I C = 1.5 A IC = 3 A I B = 0.15 A I B = 0.6 A 1.5 2 V V BE ∗ Base-Emitter on Voltage I C = 0.5 A V CE = 1 V 1.2 V h FE DC Current Gain I C = 0.1 A I C = 0.5 A I C = 1.5 A V CE = 1 V V CE = 1 V V CE = 1 V 50 30 12 Transistor Frequency I C = 0.1 A f = 10 MHz V CE = 10 V 50 Collector-base Capacitance V CB = 10 V for MJE172 for MJE182 fT C CBO ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5% For PNP type voltage and current values are negative. 2/4 IE = 0 250 MHz f = 0.1MHz 60 40 pF pF MJE172 - MJE182 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G 4.65 0.163 3.8 3 0.183 0.150 3.2 H H2 0.087 0.118 0.126 2.54 0.100 2.15 0.084 H2 c1 0016114 3/4 MJE172 - MJE182 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 4/4