BD235 BD236 BD237 BD238 ® COMPLEMENTARY SILICON POWER TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD235 BD237 PNP BD236 BD238 V CBO Collector-Base Voltage (I E = 0) 60 100 V CER Collector-Base Voltage (R BE = 1KΩ) Collector-Emitter Voltage (I B = 0) 60 100 V V CEO 60 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 2 A 6 A IC I CM Collector Peak Current (t p < 5 ms) o P tot Total Dissipation at T c = 25 C T stg Storage Temperature Tj Max. Operating Junction Temperature 25 V W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. February 2003 1/5 BD235 BD236 BD237 BD238 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CBO Collector Cut-off Current (I E = 0) V CE = rated V CEO V CE = rated V CEO I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ Typ. T c = 150 o C I C = 100 mA for BD235 / BD236 for BD237 / BD238 Max. Unit 0.1 2 mA mA 1 mA 60 80 V V Collector-Emitter Saturation Voltage IC = 1 A I B = 0.1 A 0.6 V V BE ∗ Base-Emitter Voltage IC = 1 A V CE = 2 V 1.3 V h FE ∗ DC Current Gain I C = 150 mA IC = 1 A V CE = 2 V V CE = 2 V 40 25 Transition frequency I C = 250 mA V CE = 10 V 3 I C = 150 mA V CE = 2 V fT h FE1 /h FE2 ∗ Matched Pairs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/5 Min. Derating Curve MHz 1.6 BD235 BD236 BD237 BD238 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Collector-Base Capacitance (PNP type) 3/5 BD235 BD236 BD237 BD238 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.425 b 0.7 0.9 0.028 0.035 b1 0.40 0.65 0.015 0.025 C 2.4 2.7 0.094 0.106 c1 1.0 1.3 0.039 0.051 D 15.4 16.0 0.606 0.630 e 2.2 0.087 e3 4.4 0.173 F G 3.8 3 0.150 3.2 H 0.118 0.126 2.54 0.100 H2 2.15 0.084 I 1.27 0.05 O 0.3 0.011 V o 10 10o 1: Base 2: Collector 3: Emitter 0016114/B 4/5 BD235 BD236 BD237 BD238 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5