TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP125, TIP126 and TIP127, respectively. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R2 Typ. = 150 Ω R1 Typ. = 5 KΩ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP120 TIP121 TIP122 PNP TIP125 TIP126 TIP127 V CBO Collector-Base Voltage (I E = 0) 60 80 100 V V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 5 A 8 A IC I CM IB P tot T stg Tj Collector Peak Current Base Current 0.1 A Total Dissipation at T case ≤ 25 o C o T amb ≤ 25 C Storage Temperature 65 2 W W Max. Operating Junction Temperature -65 to 150 o C 150 o C * For PNP types voltage and current values are negative. March 2000 1/4 TIP120/TIP121/TIP122/TIP125/TIP126/TIP127 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 1.92 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CEO Collector Cut-off Current (I B = 0) Parameter for TIP120/125 for TIP121/126 for TIP122/127 V CE = 30 V V CE = 40 V V CE = 50 V 0.5 0.5 0.5 mA mA mA I CBO Collector Cut-off Current (I B = 0) for TIP120/125 for TIP121/126 for TIP122/127 V CB = 60 V V CB = 80 V V CB = 100 V 0.2 0.2 0.2 mA mA mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions I C = 30 mA for TIP120/125 for TIP121/126 for TIP122/127 Min. Typ. V V V 60 80 100 V CE(sat) * Collector-Emitter Saturation Voltage IC = 3 A IC = 5 A I B = 12 mA I B = 20 mA 2 4 V V V BE(on) * Base-Emitter Voltage IC = 3 A V CE = 3 V 2.5 V DC Current Gain I C = 0.5 A IC = 3 A V CE = 3 V V CE = 3 V h FE * ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 2 % For PNP types voltage and current values are negative. 2/4 1000 1000 TIP120/TIP121/TIP122/TIP125/TIP126/TIP127 TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 L4 16.4 13.0 0.645 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 TIP120/TIP121/TIP122/TIP125/TIP126/TIP127 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4