MOTOROLA MRF140

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by MRF140/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to 150 MHz
frequency range.
• Specified 28 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 15 dB (Typ)
Efficiency = 40% (Typ)
150 W, to 150 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
• Superior High Order IMD
• IMD(d3) (150 W PEP) — – 30 dB (Typ)
• IMD(d11) (150 W PEP) — – 60 dB (Typ)
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
D
G
CASE 211–11, STYLE 2
S
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage
VDGO
65
Vdc
VGS
± 40
Vdc
Drain Current — Continuous
ID
16
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
300
1.7
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
0.6
°C/W
Gate–Source Voltage
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1997
MRF140
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0)
IDSS
—
—
5.0
mAdc
Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0)
IGSS
—
—
1.0
µAdc
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 10 Adc)
VDS(on)
0.1
0.9
1.5
Vdc
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
gfs
4.0
7.0
—
mhos
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
450
—
pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
400
—
pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
75
—
pF
Gps
—
—
15
6.0
—
—
dB
η
—
40
—
%
IMD(d3)
IMD(d11)
—
—
– 30
– 60
—
—
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain
(VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA)
(30 MHz)
(150 MHz)
Drain Efficiency
(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 6.5 A)
Intermodulation Distortion (1)
(VDD = 28 V, Pout = 150 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 250 mA)
dB
ψ
Load Mismatch
(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
No Degradation in Output Power
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
+
BIAS
0 – 12 V–
L1
C11
R4
C6
C5
C4
R1
RF INPUT
C8
C7
L2
C9
+
–
C10
+
28 V
–
RF
OUTPUT
T2
DUT
R3
T1
C2
C3
C12
R2
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or
Monolythic with Short Leads
C3 — Arco 469
C4 — 820 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10 µF/100 V Electrolytic
C11 — 1 µF, 50 V, Tantalum
C12 — 330 pF, Dipped Mica (Short leads)
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 1.0 Ω/1.0 W Carbon or Parallel Two 2 Ω, 1/2 W Resistors
R4 — 1 kΩ/1/2 W Carbon
T1 — 16:1 Broadband Transformer
T2 — 1:25 Broadband Transformer
Figure 1. 30 MHz Test Circuit (Class AB)
MRF140
2
MOTOROLA RF DEVICE DATA
15
10
VDD = 28 V
IDQ = 250mA
Pout = 150 W (PEP)
5
120
80
40
0
0
10
VDD = 28 V, IDQ = 250 mA
20
30
200
160
30 MHz
POWER GAIN (dB)
20
150 MHz
200
160
Pout , OUTPUT POWER (WATTS)
25
120
80
40
2
5
10
20
50
100
0
1
2
3
4
5
6
f, FREQUENCY (MHz)
Pin, INPUT POWER (WATTS)
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
– 25
– 40
150 MHz
d3
– 35
d5
– 45
VDD = 28 V, IDQ = 250 mA,
TONE SEPARATION = 1 kHz
– 30
– 35
d3
– 40
– 45
0
20
40
60
80
100
120
d5
140
160
f T, UNITY GAIN FREQUENCY (MHz)
1000
– 30
– 50
0
200
30 MHz
IMD, INTERMODULATION DISTORTION (dB)
0
800
VDS = 20 V
600
400
10 V
200
0
0
5
10
15
20
ID, DRAIN CURRENT (AMPS)
Pout, OUTPUT POWER (WATTS PEP)
Figure 4. IMD versus Pout
Figure 5. Common Source Unity Gain
Frequency versus Drain Current
I DS, DRAIN CURRENT (AMPS)
10
8
VDS = 10 V
gfs = 6 mhos
6
4
2
0
0
2
4
6
8
VGS, GATE–SOURCE VOLTAGE (VOLTS)
10
Figure 6. Gate Voltage versus Drain Current
MOTOROLA RF DEVICE DATA
MRF140
3
150
Zin
50
30
150
30
7.0
ZOL*
f = 2.0 MHz
Zo = 10 Ohms
7.0
VDD = 28 V
IDQ = 250 mA
Pout = 150 W PEP
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
f = 2.0 MHz
NOTE: Gate Shunted by 25 Ohms.
Figure 7. Series Equivalent Impedance
RFC1
+ 28 V
+
BIAS
0 – 12 V
R1
C10
L4
–
C11
+
C4
C5
DUT
L3
RFC1
C1
C9
L2
L1
RF
OUTPUT
RF INPUT
C6
C2
C3
R2
C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1 µF, Ceramic
C5 — 1.0 µF, 15 WV Tantalum
C6 — 15 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05 µF, Ceramic
C11 — 15 µF, 35 WV Electrolytic
C7
C8
D1
L1 — 3/4″, #18 AWG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 7/8″, #16 AWG into Hairpin
L4 — 2 Turns, #16 AWG, 5/16 ID
RFC1 — 5.6 µH, Molded Choke
RFC2 — VK200–4B
R1, R2 — 150 Ω, 1.0 W Carbon
Figure 8. 150 MHz Test Circuit (Class AB)
MRF140
4
MOTOROLA RF DEVICE DATA
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during the
fabrication of the RF MOSFET results in a junction capacitance from drain–to–source (Cds).
These capacitances are characterized as input (Ciss),
output (Coss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the inter–terminal capacitances and those given on data sheets are shown below. The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operating conditions in RF applications.
DRAIN
Cgd
GATE
Cds
Cgs
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
SOURCE
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain data
presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain
current level. This is equivalent to fT for bipolar transistors.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some
extent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, VDS(on), occurs in the
linear region of the output characteristic and is specified under
specific test conditions for gate–source voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 109 ohms —
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are
essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on the
input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection
is required, an external zener diode is recommended.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RCE(sat) =
MOTOROLA RF DEVICE DATA
Drain
Source
Gate
V(BR)DSS
VDGO
ID
IDSS
IGSS
VGS(th)
VDS(on)
Ciss
Coss
gfs
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . r
DS(on) =
IC
VDS(on)
ID
MRF140
5
PACKAGE DIMENSIONS
A
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
M
1
M
Q
DIM
A
B
C
D
E
H
J
K
M
Q
R
U
4
R
2
B
3
D
K
J
C
H
E
SEATING
PLANE
INCHES
MIN
MAX
0.960
0.990
0.465
0.510
0.229
0.275
0.216
0.235
0.084
0.110
0.144
0.178
0.003
0.007
0.435
–––
45 _NOM
0.115
0.130
0.246
0.255
0.720
0.730
STYLE 2:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
24.39
25.14
11.82
12.95
5.82
6.98
5.49
5.96
2.14
2.79
3.66
4.52
0.08
0.17
11.05
–––
45 _NOM
2.93
3.30
6.25
6.47
18.29
18.54
SOURCE
GATE
SOURCE
DRAIN
CASE 211–11
ISSUE N
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MRF140
6
◊
MRF140/D
MOTOROLA RF DEVICE
DATA