MOTOROLA MRF175GU

Order this document
by MRF175GU/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
• Guaranteed Performance
MRF175GV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
MRF175GU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 12 dB Typ
Efficiency — 55% Typ
200/150 WATTS, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
D
• 100% Ruggedness Tested At Rated Output Power
• Low Thermal Resistance
• Low Crss — 20 pF Typ @ VDS = 28 V
G
S
(FLANGE)
G
CASE 375–04, STYLE 2
D
MAXIMUM RATINGS
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 MΩ)
VDGR
65
Vdc
VGS
± 40
Vdc
Gate–Source Voltage
Drain Current — Continuous
ID
26
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
400
2.27
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
0.44
°C/W
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
—
2.5
mAdc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
—
1.0
µAdc
Characteristic
OFF CHARACTERISTICS (1)
(continued)
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1995
MRF175GU MRF175GV
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
6.0
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A)
VDS(on)
0.1
0.9
1.5
Vdc
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
gfs
2.0
3.0
—
mhos
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
180
—
pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
200
—
pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
20
—
pF
Common Source Power Gain
(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
Gps
12
14
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
η
55
65
—
%
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
ψ
Characteristic
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL CHARACTERISTICS — MRF175GV (2) (Figure 1)
No Degradation in Output Power
NOTES:
1. Each side of device measured separately.
2. Measured in push–pull configuration.
L2
R1
BIAS 0 – 6 V
C8
C3
C10
C9
C4
R2
+
28 V
–
L1
D.U.T.
T2
T1
C5
C1
C6
C2
C7
C1 — Arco 404, 8.0– 60 pF
C2, C3, C7, C8 — 1000 pF Chip
C4, C9 — 0.1 µF Chip
C5 — 180 pF Chip
C6 — 100 pF and 130 pF Chips in Parallel
C10 — 0.47 µF Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enamel Wire, Close
L1 — Wound, 1/4″ I.D.
L2 — Ferrite Beads of Suitable Material for
L2 — 1.5 – 2.0 µH Total Inductance
Board material — .062″ fiberglass (G10),
Two sided, 1 oz. copper, εr
5
^
R1 — 100 Ohms, 1/2 W
R2 — 1.0 k Ohm, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.
T1 — Can Be Made of 25 Ohm Semirigid Coax,
T1 — 47 – 52 Mils O.D.
T2 — 1:9 Impedance Ratio RF Transformer.
T2 — Can Be Made of 15– 18 Ohms Semirigid
T2 — Coax, 62 – 90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent.
Figure 1. 225 MHz Test Circuit
MRF175GU MRF175GV
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Common Source Power Gain
(VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)
Gps
10
12
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)
η
50
55
—
%
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
ψ
FUNCTIONAL CHARACTERISTICS — MRF175GU (1) (Figure 2)
No Degradation in Output Power
NOTE:
1. Measured in push–pull configuration.
B
A
L5
C14
C15
L6
BIAS
C10
R1
C11
C1
C12
R2
D.U.T.
L1
L3
C8
Z1
B1
C3
C2
C4
L2
Z3
Z5
C6
C5
28 V
C18
C13
Z2
C7
Z4
B2
Z6
C9
R3
L4
A
B
C16
B1 — Balun 50 Ω Semi Rigid Coax 0.086″ O.D. 2″ Long
B2 — Balun 50 Ω Semi Rigid Coax 0.141″ O.D. 2″ Long
C1, C2, C8, C9 — 270 pF ATC Chip Cap
C3, C5, C7 — 1.0 – 20 pF Trimmer Cap
C4 — 15 pF ATC Chip Cap
C6 — 33 pF ATC Chip Cap
C10, C12, C13, C16, C17 — 0.01 µF Ceramic Cap
C11 — 1.0 µF 50 V Tantalum
C14, C15 — 680 pF Feedthru Cap
C18 — 20 µF 50 V Tantalum
0.180″
C17
L1, L2 — Hairpin Inductor #18 Wire
L3, L4 — 12 Turns #18 Enameled Wire 0.340″ I.D.
L5 — Ferroxcube VK200 20/4B
L6 — 3 Turns #16 Enameled Wire 0.340″ I.D.
R1 — 1.0 kΩ 1/4 W Resistor
R2, R3 — 10 kΩ 1/4 W Resistor
Z1, Z2 — Microstrip Line 0.400″ x 0.250″
Z3, Z4 — Microstrip Line 0.870″ x 0.250″
Z5, Z6 — Microstrip Line 0.500″ x 0.250″
0.200″
Board material — 0.060″ Teflon–fiberglass,
εr = 2.55, copper clad both sides, 2 oz. copper.
Figure 2. 400 MHz Test Circuit
MOTOROLA RF DEVICE DATA
MRF175GU MRF175GV
3
TYPICAL CHARACTERISTICS
100
3000
I D, DRAIN CURRENT (AMPS)
f T, UNITY GAIN FREQUENCY (MHz)
4000
VDS = 20 V
2000
VDS = 10 V
1000
0
0
2
4
6
8
10
12
14
ID, DRAIN CURRENT (AMPS)
16
18
10
TC = 25°C
1
20
1
10
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
Figure 3. Common Source Unity Current Gain
Frequency versus Drain Current
I D, DRAIN CURRENT (AMPS)
5
4
VDS = 10 V
3
2
TYPICAL DEVICE SHOWN, VGS(th) = 3 V
1
1
2
3
4
5
VGS, GATE–SOURCE VOLTAGE (VOLTS)
100
6
Figure 5. Drain Current versus Gate Voltage
(Transfer Characteristics)
1.2
VDD = 28 V
1.1
ID = 4 A
1
3A
2A
0.9
100 mA
0.8
– 25
0
25
50
75
100
125
TC, CASE TEMPERATURE (°C)
150
175
Figure 6. Gate–Source Voltage versus
Case Temperature
1000
VGS = 0 V
f = 1 MHz
C, CAPACITANCE (pF)
500
Coss
200
Ciss
100
50
Crss
20
10
0
5
10
15
20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
25
Figure 7. Capacitance versus Drain–Source Voltage*
* Data shown applies to each half of MRF175GU/GV.
MRF175GU MRF175GV
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MRF175GV
320
Pout , OUTPUT POWER (WATTS)
Pout , POWER OUTPUT (WATTS)
300
200
100
VDD = 28 V
IDQ = 2 x 100 mA
f = 225 MHz
0
0
12
Pin, POWER INPUT (WATTS)
280
IDQ = 2 x 100 mA
f = 225 MHz
240
Pin = 12 W
200
8W
160
120
4W
80
40
0
24
14
12
Figure 8. Power Input versus Power Output
16
18
20
22
24
VDD, SUPPLY VOLTAGE (VOLTS)
26
28
Figure 9. Output Power versus Supply Voltage
MRF175GU
200
200
Pin = 14 W
180
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
180
160
140
10 W
120
100
6W
80
60
40
20
0
14
16
18
20
22
24
VDD, SUPPLY VOLTAGE (VOLTS)
f = 400 MHz
140
500 MHz
120
100
80
60
VDS = 28 V
IDQ = 2 x 100 mA
40
20
f = 400 MHz
12
160
26
28
0
0
Figure 10. Output Power versus Supply Voltage
5
10
15
Pin, INPUT POWER (WATTS)
20
25
Figure 11. Output Power versus Input Power
MRF175GV
30
POWER GAIN (dB)
25
Pout = 200 W
20
15
VDS = 28 V
IDQ = 2 x 100 mA
10
5
5
10
20
150 W
50
100
f, FREQUENCY (MHz)
200
500
Figure 12. Power Gain versus Frequency
MOTOROLA RF DEVICE DATA
MRF175GU MRF175GV
5
INPUT AND OUTPUT IMPEDANCE
VDD = 28 V, IDQ = 2 x 100 mA
Zin
300
400
225
ZOL*
225
400
f = 500 MHz
f = 500 MHz
ZOL*
150
100
100
50
30
50
30
Zo = 10 Ω
Zin
OHMS
225
300
400
500
1.95 – j2.30
1.75 – j0.20
1.60 + j2.20
1.35 + j4.00
30
50
100
150
225
6.50 – j5.10
5.00 – j4.80
3.60 – j4.20
2.80 – j3.60
1.95 – j2.30
ZOL*
OHMS
(Pout = 150 W)
225
300
150
f
MHz
ZOL* = Conjugate of the optimum load
impedance into which the device
operates at a given output power,
voltage and frequency.
3.10 – j0.25
2.60 + j0.20
2.00 + j1.20
1.70 + j2.70
(Pout = 200 W)
6.30 – j2.50
5.75 – j2.75
4.60 – j2.65
2.60 – j2.20
2.60 – j0.60
NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively.
Figure 13. Series Equivalent Input/Output Impedance
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure determines the capacitors from gate–to–drain (Cgd), and gate–to–
source (Cgs). The PN junction formed during the fabrication
of the MOSFET results in a junction capacitance from drain–
to–source (Cds).
These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the inter–terminal capacitances and those given on data sheets are shown below. The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operating conditions in RF applications.
DRAIN
Cgd
GATE
Cds
Cgs
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
SOURCE
The Ciss given in the electrical characteristics table was
measured using method 2 above. It should be noted that
Ciss, Coss, Crss are measured at zero drain current and are
MRF175GU MRF175GV
6
provided for general information about the device. They are
not RF design parameters and no attempt should be made to
use them as such.
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain, data presented in Figure 3 may give the designer additional information on the capabilities of this device. The graph represents
the small signal unity current gain frequency at a given drain
current level. This is equivalent to fT for bipolar transistors.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some extent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, VDS(on), occurs in the
linear region of the output characteristic and is specified under specific test conditions for gate–source voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE CHARACTERISTICS
The gate of the MOSFET is a polysilicon material, and is
electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 109 ohms —
resulting in a leakage current of a few nanoamperes.
MOTOROLA RF DEVICE DATA
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating (or any of the maximum ratings on the front page). Exceeding the rated VGS can result in permanent damage to
the oxide layer in the gate region.
Gate Termination — The gates of this device are essentially capacitors. Circuits that leave the gate open–circuited
or floating should be avoided. These conditions can result in
turn–on of the devices due to voltage build–up on the input
capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended.
Using a resistor to keep the gate–to–source impedance
low also helps damp transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate–drain capacitance. If the
gate–to–source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate–threshold voltage
and turn the device on.
HANDLING CONSIDERATIONS
When shipping, the devices should be transported only in
antistatic bags or conductive foam. Upon removal from the
packaging, careful handling procedures should be adhered
to. Those handling the devices should wear grounding straps
and devices not in the antistatic packaging should be kept in
metal tote bins. MOSFETs should be handled by the case
and not by the leads, and when testing the device, all leads
should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it
is designed for, soldering should be done with grounded
equipment.
MOTOROLA RF DEVICE DATA
DESIGN CONSIDERATIONS
The MRF175G is a RF power N–channel enhancement
mode field–effect transistor (FETs) designed for HF, VHF and
UHF power amplifier applications. Motorola RF MOSFETs
feature a vertical structure with a planar design.
Motorola Application Note AN211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.
The major advantages of RF power FETs include high
gain, low noise, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can
be varied over a wide range with a low power dc control signal.
DC BIAS
The MRF175G is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain
current flows when a positive voltage is applied to the gate.
RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF175G was characterized
at IDQ = 100 mA, each side, which is the suggested minimum
value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical
parameters.
The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate
bias sytem.
GAIN CONTROL
Power output of the MRF176 may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual
gain control, AGC/ALC and modulation systems.
MRF175GU MRF175GV
7
PACKAGE DIMENSIONS
U
G
Q
RADIUS 2 PL
0.25 (0.010)
1
M
T A
M
DIM
A
B
C
D
E
G
H
J
K
N
Q
R
U
–B–
5
3
4
D
E
B
2
R
K
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
J
N
H
–T–
–A–
SEATING
PLANE
C
STYLE 2:
PIN 1.
2.
3.
4.
5.
INCHES
MIN
MAX
1.330
1.350
0.370
0.410
0.190
0.230
0.215
0.235
0.050
0.070
0.430
0.440
0.102
0.112
0.004
0.006
0.185
0.215
0.845
0.875
0.060
0.070
0.390
0.410
1.100 BSC
MILLIMETERS
MIN
MAX
33.79
34.29
9.40
10.41
4.83
5.84
5.47
5.96
1.27
1.77
10.92
11.18
2.59
2.84
0.11
0.15
4.83
5.33
21.46
22.23
1.52
1.78
9.91
10.41
27.94 BSC
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375–04
ISSUE D
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MRF175GU MRF175GV
8
◊
*MRF175GU/D*
MRF175GU/D
MOTOROLA RF DEVICE
DATA