FREESCALE MRF5015

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by MRF5015/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.
• Guaranteed Performance at 512 MHz, 12.5 Volts
Output Power — 15 Watts
Power Gain — 10 dB Min
Efficiency — 50% Min
15 W, 512 MHz, 12.5 VOLTS
N–CHANNEL BROADBAND
RF POWER FET
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 319–07, STYLE 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
36
Vdc
Drain–Gate Voltage (RGS = 1 MΩ)
VDGR
36
Vdc
VGS
± 20
Vdc
Gate–Source Voltage
Drain Current — Continuous
ID
6
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
50
0.29
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
3.5
°C/W
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage (VGS = 0, ID = 5 mAdc)
V(BR)DSS
36
—
—
Vdc
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0)
IDSS
—
—
5
mAdc
Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0)
IGSS
—
—
2
µAdc
OFF CHARACTERISTICS
(continued)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1994
MRF5015
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mAdc)
VGS(th)
1.25
2.3
3.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
—
0.375
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc )
gfs
1.2
—
—
S
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
33
—
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
74
—
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Crss
7
8.8
10.8
pF
10
—
11.5
15
—
—
50
—
55
55
—
—
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 15 W,
IDQ = 100 mA)
f = 512 MHz
f = 175 MHz
Gps
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 15 W,
IDQ = 100 mA)
f = 512 MHz
f = 175 MHz
η
+
C1
R2
Z2
+
C2
C11
L1
Z6
Z3
L2
DUT
Z7
Z9
Z8
C8
C7
Z5
VDD
C13
Socket
R3
C5
B1, B2
C1, C13
C2, C12
C3, C4, C10, C11
C5, C9
C6
C7
C8
L1, L2
N1, N2
R1
R2
B1 C12
C3
Z4
C4
No Degradation in Output Power
B1
R1
VGG
Z1
%
ψ
Load Mismatch
(VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,
Load VSWR = 20:1, All Phase Angles at Frequency of Test)
RF N1
Input
dB
Z10
C10
Z11
N2 RF
Output
C9
C6
Ferrite Bead, Fair Rite Products
10 µF, 50 V, Electrolytic
0.1 µF, Chip Capacitor
120 pF, Chip Capacitor
0 to 20 pF, Trimmer Capacitor
36 pF, Chip Capacitor
43 pF, Chip Capacitor
30 pF, Chip Capacitor
7 Turns, 24 AWG 0.116″ ID
Type N Flange Mount
1 kΩ, 1/4 W, Carbon
470 kΩ, 1/4 W, Carbon
R3
Z1, Z11
Z2
Z3
Z4
Z5
Z6
Z7, Z8
Z9
Z10
Board
160 Ω, 0.1 W Chip
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line+
Transmission Line*
Transmission Line*
Glass Teflon 0.060″
+ Part of Capacitor Mount Socket
*See Photomaster
Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic
MRF5015
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
25
25
20
520 MHz
15
10
VDD = 12.5 V
IDQ = 100 mA
5
0
20
1W
15
0.5 W
10
5
0
0
0.5
1
1.5
Pin, INPUT POWER (WATTS)
2
6
2.5
Figure 2. Output Power versus Input Power
8
10
12
VDD, SUPPLY VOLTAGE (VOLTS)
16
14
Figure 3. Output Power versus Supply Voltage
25
2
VDD = 12.5 V
Pin = 1.5 W
f = 520 MHz
20
1.8
I D , DRAIN CURRENT (AMPS)
Pout , OUTPUT POWER (WATTS)
Pin = 1.5 W
IDQ = 100 mA
f = 520 MHz
470 MHz
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
f = 400 MHz
Typical Device Shown
15
10
VDS = 10 V
1.6
1.4
1.2
1
0.8
0.6
Typical Device Shown
0.4
0.2
0
1
2
3
4
5
C, CAPACITANCE (pF)
1
2
3
4
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 4. Output Power versus Gate Voltage
Figure 5. Drain Current versus Gate Voltage
VGS = 0
f = 1 MHz
150
Coss
50
Ciss
Crss
0
0
0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
200
100
0
6
VGS , GATE-SOURCE VOLTAGE (NORMALIZED)
5
5
25
15
20
10
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Voltage
MOTOROLA RF DEVICE DATA
30
1.04
1.03
VDD = 12.5 V
ID = 1.5 A
1.02
ID = 1 A
1.01
1.00
0.99
0.98
0.97
0.96
ID = 0.05 A
0.95
0.94
– 25
0
25
ID = 0.5 A
ID = 0.25 A
100
125
50
75
TC, CASE TEMPERATURE (°C)
150
175
Figure 7. Gate–Source Voltage
versus Case Temperature
MRF5015
3
TYPICAL CHARACTERISTICS
I D , DRAIN CURRENT (AMPS)
10
TC = 25°C
1
0.1
1
10
100
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 8. DC Safe Operating Area
VDD = 12.5 V, IDQ = 100 mA, Pout = 15 W
f
(MHz)
Zin
(Ω)
ZOL*
(Ω)
400
2.0 – j6.1
1.3 – j0.4
420
1.8 – j5.3
1.4 – j0.4
440
1.6 – j4.7
1.5 – j0.4
460
1.5 – j4.2
1.5 – j0.3
480
1.4 – j3.8
1.5 – j0.2
500
1.3 – j3.6
1.4 – j0.1
520
1.2 – j3.5
1.3 + j0.1
520
ZOL*
460
f = 400 MHz
Zo = 10 Ω
Zin
520
460
= Conjugate of source impedance with
parallel 160 Ω resistor and 36 pF capacitor
in series with gate.
ZOL* = Conjugate of the load impedance at given
output power, voltage and frequency that
produces maximum gain.
Zin
f = 400 MHz
Figure 9. Series Equivalent Input and Output Impedance
MRF5015
4
MOTOROLA RF DEVICE DATA
Table 1. Common Source Scattering Parameters (VDS = 12.5 V)
ID = 50 mA
f
MHz
50
100
200
300
400
500
700
850
1000
S11
S21
∠φ
|S11|
0.63
0.62
0.70
0.78
0.84
0.88
0.93
0.95
0.96
–123
–142
–152
–157
–162
–165
–171
–175
–178
S12
∠φ
|S21|
8
4
1.8
1.1
0.70
0.49
0.28
0.20
0.15
100
82
61
47
36
28
17
13
10
S22
∠φ
|S12|
0.063
0.063
0.056
0.046
0.037
0.029
0.016
0.010
0.007
11
–6
– 23
– 35
– 42
– 46
– 45
– 31
11
∠φ
|S22|
0.79
0.82
0.86
0.90
0.93
0.94
0.97
0.97
0.98
–149
–162
–169
–171
–174
–175
–179
179
178
ID = 100 mA
f
MHz
50
100
200
300
400
500
700
850
1000
S11
S21
∠φ
|S11|
0.67
0.66
0.71
0.77
0.82
0.86
0.91
0.93
0.95
–136
–153
–160
–163
–165
–168
–173
–176
–179
S12
∠φ
|S21|
9.1
4.6
2.2
1.3
0.89
0.64
0.37
0.27
0.20
99
84
66
54
44
36
25
20
16
S22
∠φ
|S12|
0.047
0.048
0.043
0.037
0.031
0.025
0.015
0.010
0.009
10
–3
–17
– 26
– 32
– 35
– 30
–11
25
∠φ
|S22|
0.82
0.85
0.87
0.90
0.92
0.94
0.96
0.97
0.98
–158
–168
–172
–174
–175
–177
–179
179
177
ID = 500 mA
f
MHz
50
100
200
300
400
500
700
850
1000
S11
S21
∠φ
|S11|
0.81
0.81
0.82
0.84
0.86
0.88
0.91
0.93
0.94
–150
–164
–170
–173
–174
–175
–178
180
178
S12
∠φ
|S21|
11.1
5.6
2.7
1.7
1.2
0.92
0.57
0.43
0.33
98
86
73
63
55
47
35
29
23
S22
∠φ
|S12|
0.027
0.027
0.025
0.023
0.020
0.018
0.013
0.013
0.014
11
2
–5
–9
–9
–7
7
26
44
∠φ
|S22|
0.85
0.87
0.88
0.89
0.91
0.92
0.94
0.95
0.96
–168
–174
–176
–177
–178
–179
180
178
177
ID = 2.5 A
f
MHz
50
100
200
300
400
500
700
850
1000
S11
|S11|
0.86
0.85
0.86
0.87
0.89
0.91
0.93
0.94
0.95
S21
∠φ
–144
–161
–170
–173
–175
–176
–179
179
177
MOTOROLA RF DEVICE DATA
|S21|
10.1
5.2
2.5
1.6
1.1
0.84
0.52
0.39
0.30
S12
∠φ
101
88
74
64
55
48
37
30
26
|S12|
0.022
0.022
0.021
0.019
0.017
0.015
0.013
0.014
0.016
S22
∠φ
15
5
–1
–4
–2
2
22
39
52
|S22|
0.85
0.87
0.89
0.90
0.91
0.93
0.95
0.96
0.96
∠φ
–171
–175
–177
–178
–178
–179
179
178
176
MRF5015
5
DESIGN CONSIDERATIONS
GATE CHARACTERISTICS
The MRF5015 is a common–source, RF power, N–Channel enhancement mode, Metal–Oxide Semiconductor Field–
Effect Transistor (MOSFET). Motorola RF MOSFETs feature
a vertical structure with a planar design. Motorola Application
Note AN211A, “FETs in Theory and Practice,” is suggested
reading for those not familiar with the construction and characteristics of FETs.
This device was designed primarily for 12.5 volt VHF and
UHF power amplifier applications. The major advantages of
RF power MOSFETs include high gain, simple bias systems,
relative immunity from thermal runaway, and the ability to
withstand severely mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (C gs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance
from drain–to–source (C ds). These capacitances are characterized as input (C iss), output (C oss) and reverse transfer
(C rss) capacitances on data sheets. The relationships between the inter–terminal capacitances and those given on
data sheets are shown below. The C iss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and
2. zero volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
Drain
Cgd
Gate
Cds
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
Cgs
Source
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The input resistance is very high, on the order of 109 Ω, resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate–to–source threshold voltage,
V GS(th).
Gate Voltage Rating – Never exceed the gate voltage rating. Exceeding the rated V GS can result in permanent damage to the oxide layer in the gate region.
Gate Termination – The gates of these devices are essentially capacitors. Circuits that leave the gate open–circuited or floating must be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on
the input capacitor due to leakage currents or pickup.
Gate Protection – These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended
with appropriate RF decoupling networks.
Using a resistor to keep the gate–to–source impedance
low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled
to the gate through the parasitic gate–drain capacitance. If
the gate–to–source impedance and the rate of voltage
change on the drain are both high, then the signal coupled to
the gate may be large enough to exceed the gate–threshold
voltage and turn the device on.
DC BIAS
Since the MRF5015 is an enhancement mode FET, drain
current flows only when the gate is at a higher potential than
the source. See Figure 5 for a typical plot of drain current
versus gate voltage. RF power FETs operate optimally with a
quiescent drain current (I DQ), whose value is application dependent. The MRF5015 was characterized at I DQ = 100 mA,
which is the suggested value of bias current for typical applications. For special applications such as linear amplification, I DQ may have to be selected to optimize the critical
parameters.
The gate is a dc open circuit and draws essentially no current. Therefore, the gate bias circuit may generally be just a
simple resistive divider network. Some special applications
may require a more elaborate bias system.
DRAIN CHARACTERISTICS
GAIN CONTROL
One critical figure of merit for a FET is its static resistance
in the full–on condition. This on–resistance, R ds(on), occurs
in the linear region of the output characteristic and is specified at a specific gate–source voltage and drain current. The
drain–source voltage under these conditions is termed
V ds(on). For MOSFETs, V ds(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
Power output of the MRF5015 may be controlled to some
degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. Figure 4 is an example
of output power variation with gate–source bias voltage with
Pin held constant. This characteristic is very dependent on
frequency and load line.
MRF5015
6
MOTOROLA RF DEVICE DATA
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for the MRF5015. For examples see Motorola Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.” Both
small–signal S–parameters and large–signal impedances
are provided. While the S–parameters will not produce an
exact design solution for high power operation, they do yield
a good first approximation. This is an additional advantage of
RF power MOSFETs.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of MRF5015
MOTOROLA RF DEVICE DATA
yield a device quite capable of self oscillation. Stability may
be achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. Different
stabilizing techniques may be required depending on the
desired gain and bandwidth of the application. The RF test
fixture implements a parallel resistor and capacitor in series
with the gate to improve stability and input impedance Q.
Two port stability analysis with the MRF5015 S–parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola
Application Note AN215A, “RF Small–Signal Design Using
Two–Port Parameters,” for a discussion of two port network
theory and stability.
MRF5015
7
PACKAGE DIMENSIONS
Q 2 PL
-AL
IDENTIFICATION
NOTCH
6
5
0.15 (0.006)
M
T A
M
N
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
-N1
2
3
K
F
D 2 PL
0.38 (0.015) M
B
0.38 (0.015)
T A
M
N
M
T A
M
M
N
M
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
INCHES
MIN
MAX
0.965 0.985
0.355 0.375
0.230 0.260
0.115 0.125
0.102 0.114
0.075 0.085
0.160 0.170
0.004 0.006
0.090 0.110
0.725 BSC
0.225 0.241
0.125 0.135
MILLIMETER
MIN
MAX
24.52 25.01
9.02
9.52
5.85
6.60
2.93
3.17
2.59
2.90
1.91
2.15
4.07
4.31
0.11
0.15
2.29
2.79
18.42 BSC
5.72
6.12
3.18
3.42
J
C
H
E
-T-
SEATING
PLANE
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
SOURCE (COMMON)
GATE (INPUT)
SOURCE (COMMON)
SOURCE (COMMON)
DRAIN (OUTPUT)
SOURCE (COMMON)
CASE 319–07
ISSUE M
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MRF5015
8
◊
*MRF5015/D*
MRF5015/D
MOTOROLA RF DEVICE
DATA