FREESCALE MRF5035

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by MRF5035/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.
• Guaranteed Performance at 512 MHz, 12.5 Volt
Output Power — 35 Watts
Power Gain — 6.5 dB Min
Efficiency — 50% Min
35 W, 12.5 VOLTS, 512 MHz
N–CHANNEL BROADBAND
RF POWER FET
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Capable of Handling 20:1 Load VSWR, @ 15.5 Volt, 512 MHz,
2 dB Overdrive
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 316–01, STYLE 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
36
Vdc
Drain–Gate Voltage (RGS = 1 MΩ)
VDGR
36
Vdc
VGS
± 20
Vdc
Drain Current — Continuous
ID
15
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
97
0.56
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
1.8
°C/W
Gate–Source Voltage
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Drain–Source Breakdown Voltage (VGS = 0, ID = 20 mAdc)
V(BR)DSS
36
—
—
Vdc
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0)
IDSS
—
—
5
mAdc
Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0)
IGSS
—
—
5
µAdc
Characteristic
Unit
OFF CHARACTERISTICS
(continued)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1994
MRF5035
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 25 mAdc)
VGS(th)
1.25
2.3
3.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
—
0.422
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc )
gfs
3.2
—
—
S
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
88
—
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
197
—
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Crss
18
24
29
pF
6.5
—
7.5
12
—
—
50
—
55
55
—
—
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 35 W,
IDQ = 400 mA)
f = 512 MHz
f = 175 MHz
Gps
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 35 W,
IDQ = 400 mA)
f = 512 MHz
f = 175 MHz
η
R1
%
ψ
Load Mismatch
(VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,
Load VSWR = 20:1, All Phase Angles at Frequency of Test)
No Degradation in Output Power
Socket
B1
VGG
dB
+
C1
R2
VDD
+
C2
C3
L1
B2
R4
C13
C14
C12
R3
N1
RF Input
Z1
C15
Z2
C4
Z3
C7
DUT C8
Z7
Z4
C5
L2
Z8
C16
Z9
N2
RF Output
C6
C9
C10
C11
Components List
B1, B2
C1, C14
C2
C3
C4, C11
C5
C6, C7
C8, C9
C10
C12, C15, C16
C13
L1
L2
Short Ferrite Bead, Fair Rite Products
10 µF, 50 V, Electrolytic
1500 pF, Chip Capacitor
140 pF, Chip Capacitor
0–10pF, Trimmer Capacitor
30 pF, Chip Capacitor
43 pF, Chip Capacitor
36 pF, Chip Capacitor
3.6 pF, Chip Capacitor
120 pF, Chip Capacitor
0.1 µF, Chip Capacitor
5 Turns, 18 AWG, 0.116″ ID
8 Turns, 20 AWG, 0.125″ ID
N1, N2
R1
R2
R3
R4
Z1, Z9
Z2
Z3
Z4
Z7
Z8
Board
Type N Flange Mount
1 kΩ, 1/4 W, Carbon
1 MΩ, 1/4 W, Carbon
100 Ω, 1/4 W, Carbon
110 Ω, 1/4 W, Carbon
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Glass Teflon 0.060″
*See Photomaster for Dimensions
Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic
MRF5035
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
50
55
470 MHz
520 MHz
40
30
20
10
Pin = 10 W
50
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
f = 400 MHz
VDD = 12.5 V
IDQ = 400 mA
IDQ = 400 mA
f = 400 MHz
45
5W
40
35
30
3W
25
20
15
10
5
0
0
4
2
0
8
6
10
Pin, INPUT POWER (WATTS)
12
6
14
Figure 2. Output Power versus Input Power
7
9
11
13
10
12
VDD, SUPPLY VOLTAGE (VOLTS)
8
15
14
16
Figure 3. Output Power versus Supply Voltage
55
50
50
Pin = 10 W
IDQ = 400 mA
f = 520 MHz
45
40
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
7W
7W
35
5W
30
25
3W
20
15
10
VDD = 12.5 V
Pin = 7 W
f = 400 MHz
40
520 MHz
30
20
Typical Device Shown
10
5
0
0
6
7
8
9
10
11
12
13
VDD, SUPPLY VOLTAGE (VOLTS)
14
15
16
0
2
3
5
4
6
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Gate Voltage
6
400
VDS = 10 V
VGS = 0 V
f = 1 MHz
350
5
300
C, CAPACITANCE (pF)
I D , DRAIN CURRENT (AMPS)
1
4
3
2
Typical Device Shown
1
250
200
Coss
150
Ciss
100
50
0
Crss
0
0
1
2
3
4
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain Current versus Gate Voltage
MOTOROLA RF DEVICE DATA
5
0
5
10
15
20
25
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
30
Figure 7. Capacitance versus Voltage
MRF5035
3
1.04
1.03
IDQ = 5 A
3.5 A
I D , DRAIN CURRENT (AMPS)
VGS , GATE-SOURCE VOLTAGE (NORMALIZED)
TYPICAL CHARACTERISTICS
1.02
1.01
1.00
0.99
2A
0.98
0.97
0.96
VDD = 12.5 V
0.95
0.94
– 25
10
0.25 A
TC = 25°C
1A
1
0
25
50
100
75
125
TC, CASE TEMPERATURE (°C)
Figure 8. Gate–Source Voltage
versus Case Temperature
460
150
175
1
10
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 9. DC Safe Operating Area
520
VDD = 12.5 V, IDQ = 400 mA, Pin = 7.8 W,
Tune for Maximum Output Power
ZOL*
f = 400 MHz
Zin
460
f
(MHz)
Zin
(Ω)
ZOL*
(Ω)
400
1.0 + j0.89
0.87 + j2.1
420
0.90 + j0.83
0.79 + j2.2
440
0.83 + j0.81
0.73 + j2.3
460
0.82 + j0.83
0.71 + j2.4
480
0.87 + j0.90
0.71 + j2.5
500
0.97 + j1.0
0.74 + j2.6
520
1.1 + j1.2
0.80 + j2.7
Zo = 5 Ω
520
100
f = 400 MHz
Zin
= Conjugate of source impedance.
ZOL* = Conjugate of the load impedance at given
input power, voltage and frequency that
produces maximum output power.
Figure 10. Series Equivalent Input and Output Impedance
MRF5035
4
MOTOROLA RF DEVICE DATA
Table 1. Common Source Scattering Parameters (VDS = 12.5 V)
ID = 100 mA
f
MHz
25
50
100
150
200
300
400
450
500
600
S11
S21
∠φ
|S11|
0.74
0.74
0.77
0.81
0.85
0.90
0.93
0.94
0.95
0.96
–153
–164
–168
–170
–171
–174
–178
–179
179
176
S12
∠φ
|S21|
6.9
3.4
1.6
1
0.69
0.38
0.24
0.20
0.17
0.12
94
82
67
56
46
32
22
19
16
13
S22
∠φ
|S12|
0.039
0.039
0.036
0.032
0.028
0.019
0.013
0.010
0.008
0.008
6
–5
–16
– 25
– 31
– 36
– 30
– 22
–8
27
∠φ
|S22|
0.87
0.89
0.90
0.92
0.93
0.96
0.97
0.97
0.98
0.98
–169
–174
–176
–178
–179
179
177
175
174
172
ID = 400 mA
f
MHz
25
50
100
150
200
300
400
450
500
600
S11
S21
∠φ
|S11|
0.88
0.88
0.88
0.89
0.89
0.91
0.92
0.93
0.94
0.95
–163
–172
–176
–178
–179
180
178
177
176
174
S12
∠φ
|S21|
7.8
3.9
1.9
1.3
0.91
0.57
0.39
0.33
0.29
0.22
94
87
77
70
63
51
41
37
33
27
S22
∠φ
|S12|
0.018
0.018
0.018
0.017
0.016
0.014
0.012
0.012
0.012
0.014
7
3
–1
–2
–1
3
14
22
29
42
∠φ
|S22|
0.93
0.93
0.94
0.94
0.94
0.95
0.96
0.96
0.97
0.97
–175
–178
–180
179
178
177
175
174
173
171
ID = 1 A
f
MHz
25
50
100
150
200
300
400
450
500
600
S11
S21
∠φ
|S11|
0.92
0.91
0.92
0.92
0.92
0.93
0.94
0.94
0.94
0.95
–165
–173
–177
–179
180
178
176
175
174
173
S12
∠φ
|S21|
7.8
3.9
1.9
1.3
0.95
0.61
0.43
0.38
0.33
0.26
95
88
81
75
69
59
50
46
43
36
S22
∠φ
|S12|
0.013
0.013
0.013
0.013
0.012
0.012
0.013
0.013
0.014
0.016
9
6
7
9
12
21
32
37
42
49
∠φ
|S22|
0.94
0.95
0.95
0.95
0.95
0.96
0.96
0.97
0.97
0.97
–177
–179
179
179
178
176
174
174
173
171
ID = 5 A
f
MHz
25
50
100
150
200
300
400
450
500
600
S11
|S11|
0.94
0.94
0.94
0.94
0.94
0.95
0.95
0.95
0.96
0.96
S21
∠φ
–164
–172
–177
–179
179
177
176
175
174
172
MOTOROLA RF DEVICE DATA
|S21|
7.2
3.6
1.8
1.2
0.89
0.57
0.42
0.36
0.32
0.26
S12
∠φ
95
89
81
76
70
61
52
48
45
39
|S12|
0.010
0.010
0.010
0.011
0.011
0.011
0.013
0.013
0.014
0.017
S22
∠φ
10
9
11
16
21
31
41
45
48
54
|S22|
0.95
0.95
0.96
0.96
0.96
0.96
0.97
0.97
0.97
0.97
∠φ
–178
–180
179
178
177
176
174
173
172
171
MRF5035
5
DESIGN CONSIDERATIONS
The MRF5035 is a common–source, RF power, N–Channel enhancement mode, Metal–Oxide Semiconductor Field–
Effect Transistor (MOSFET). Motorola RF MOSFETs feature
a vertical structure with a planar design. Motorola Application
Note AN211A, “FETs in Theory and Practice,” is suggested
reading for those not familiar with the construction and characteristics of FETs.
This device was designed primarily for 12.5 volt VHF and
UHF Land Mobile FM power amplifier applications. The major advantages of RF power MOSFETs include high gain,
simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads
without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (C gd), and
gate–to–source (C gs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance
from drain–to–source (C ds ). These capacitances are characterized as input (C iss ), output (C oss ) and reverse transfer
(C rss ) capacitances on data sheets. The relationships between the inter–terminal capacitances and those given on
data sheets are shown below. The C iss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
the linear region of the output characteristic and is specified
at a specific gate–source voltage and drain current. The
drain–source voltage under these conditions is termed
V ds(on). For MOSFETs, Vds(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The input resistance is very high, on the order of 109 Ω, resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating – Never exceed the gate voltage rating. Exceeding the rated V GS can result in permanent damage to the oxide layer in the gate region.
Gate Termination – The gates of these devices are essentially capacitors. Circuits that leave the gate open–circuited or floating must be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on
the input capacitor due to leakage currents or pickup.
Gate Protection – These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended
with appropriate RF decoupling networks.
Using a resistor to keep the gate–to–source impedance
low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled
to the gate through the parasitic gate–drain capacitance. If
the gate–to–source impedance and the rate of voltage
change on the drain are both high, then the signal coupled to
the gate may be large enough to exceed the gate–threshold
voltage and turn the device on.
Drain
DC BIAS
Cgd
Gate
Cds
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
Cgs
Source
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full–on condition. This on–resistance, Rds(on), occurs in
MRF5035
6
Since the MRF5035 is an enhancement mode FET, drain
current flows only when the gate is at a higher potential than
the source. See Figure 6 for a typical plot of drain current
versus gate voltage. RF power FETs operate optimally with a
quiescent drain current (I DQ ), whose value is application dependent. The MRF5035 was characterized at I DQ = 400 mA,
which is the suggested value of bias current for typical applications. For special applications such as linear amplification, I DQ may have to be selected to optimize the critical
parameters.
The gate is a dc open circuit and draws essentially no current. Therefore, the gate bias circuit may generally be just a
simple resistive divider network. Some special applications
may require a more elaborate bias system.
MOTOROLA RF DEVICE DATA
GAIN CONTROL
Power output of the MRF5035 may be controlled to some
degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. Figure 5 is an example
of output power variation with gate–source bias voltage with
Pin held constant. This characteristic is very dependent on
frequency and load line.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for the MRF5035. For examples see Motorola Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.” Both
small–signal S–parameters and large–signal impedances
are provided. While the S–parameters will not produce an
exact design solution for high power operation, they do yield
MOTOROLA RF DEVICE DATA
a good first approximation. This is an additional advantage of
RF power MOSFETs.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the high gain of the MRF5035
yield a device quite capable of self oscillation. Stability may
be achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. Different
stabilizing techniques may be required depending on the
desired gain and bandwidth of the application. The RF test
fixture implements a resistor in shunt with the gate to improve stability. Two port stability analysis with the MRF5035
S–parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See
Motorola Application Note AN215A, “RF Small–Signal
Design Using Two–Port Parameters,” for a discussion of two
port network theory and stability.
MRF5035
7
PACKAGE DIMENSIONS
F
D
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
4
R
K
3
1
Q
2
L
B
C
J
E
STYLE 3:
PIN 1.
2.
3.
4.
N
H
SOURCE
DRAIN
SOURCE
GATE
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
R
U
INCHES
MIN
MAX
24.38
25.14
12.45
12.95
5.97
7.62
5.33
5.58
2.16
3.04
5.08
5.33
18.29
18.54
0.10
0.15
10.29
11.17
3.81
4.06
3.81
4.31
2.92
3.30
3.05
3.30
11.94
12.57
MILLIMETERS
MIN
MAX
0.960
0.990
0.490
0.510
0.235
0.300
0.210
0.220
0.085
0.120
0.200
0.210
0.720
0.730
0.004
0.006
0.405
0.440
0.150
0.160
0.150
0.170
0.115
0.130
0.120
0.130
0.470
0.495
U
A
CASE 316–01
ISSUE D
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MRF5035
8
◊
*MRF5035/D*
MRF5035/D
MOTOROLA RF DEVICE
DATA