FMS2021 Advanced Product Information 1.1 DC- 6 GHz SPDT WLAN GaAs Low Loss Switch Features: ♦ ♦ ♦ ♦ Functional Schematic Suitable for Multi-band WLAN Applications Excellent low control voltage performance Very low Insertion loss <0.7 dB at 6GHz typical High isolation >25 dB at 6GHz typical V4 V2 ANT1 TX ANT2 RX V1 V3 Description and Applications: The FMS2021 is a low loss, multi-band single pole double throw Gallium Arsenide antenna switch designed for use in Wireless LAN applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology that offers leading edge performance, optimised for switch applications. Simulated Electrical Specifications: (TAMBIENT = 25°C,Vctrl = 0V/(2.4V,+3.3V), ZIN = ZOUT = 50Ω) Parameter Conditions Min Typ Max Insertion Loss (All Paths) (0.5-6) GHz, Small Signal 0.7 dB Isolation (All Paths) (0.5-6) GHz, Small Signal 25 dB Return Loss (0.5-6) GHz, Small Signal 20 dB 2nd Harmonic Level 3 GHz, Pin = 20dBm, Vctrl =2.4V -70 dBc 3rd Harmonic Level 3 GHz, Pin = 20dBm, Vctrl =2.4V -70 dBc Switching speed Vctrl=2.4V, Pin=20dBm 30 ns P1dB Measured at 2.4V control 30 dBm Note: External DC blocking capacitors are required on all RF ports (typ: 47pF) 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com Units FMS2021 Advanced Product Information 1.1 Truth Table: State Vctrl1 Vctrl2 Vctrl3 Vctrl4 ON PATH(S) 1 HIGH LOW LOW LOW ANT1-RX 2 LOW HIGH LOW LOW ANT2-RX 3 LOW LOW HIGH LOW ANT2-TX 4 LOW LOW LOW HIGH ANT1-TX 5 LOW HIGH LOW HIGH ANT1-TX and ANT2-RX 6 HIGH LOW HIGH LOW ANT1-RX and ANT2-TX Note: ‘High’ ‘Low’ = +2.4V to +3.3V = 0V to +0.2V Pad and Die Layout: V2 V4 GND1 TX ANT1 RX ANT2 GND2 V1 V3 Pad Name Description Pin Coordinates V4 Vctrl4 134 , 568 ANT1 Antenna 1 134 , 439 ANT2 Antenna 2 134 , 257 V1 Vcrtl1 134 , 114 GND2 Ground 2 355.5 , 114 V3 Vctrl3 547 , 114 RX Receive 547 , 257 TX Transmit 547 , 439 V2 Vctrl2 547 , 568 GND1 Ground 1 353 , 568 (x µm, y µm) Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (µm x µm) Die Thickness (µm) Min. Bond Pad Pitch(µm) 660 x 680 150 129 Min. Bond pad opening (µm x µm) 80 x 80 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2021 Advanced Product Information 1.1 Simulated Performance: Insertion Loss -0.4 Loss(dB) -0.5 -0.6 -0.7 -0.8 -0.9 -1 0.5 2.5 4.5 6 4.5 6 4.5 6 Frequency (GHz) Isolation -25 Isolation (dB) -30 -35 -40 -45 -50 0.5 2.5 Frequency (GHz) Return Loss -20 S11 (dB) -22 -24 -26 -28 0.5 2.5 Frequency (GHz) 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com Advanced Product Information 1.1 FMS2021 Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com