FILTRONIC FMS2016-005

FMS2016-005
Datasheet v3.0
High Power Reflective GaAs SP4T Switch
FEATURES:
•
•
•
•
•
•
FUNCTIONAL SCHEMATIC:
3x3x0.9mm Packaged pHEMT Switch
NiPdAu finish for Military and High reliability
applications
High isolation: >30dB at 1.8GHz
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
RoHS Compliant (Directive 2002/95/EC)
ANT
RF1
RF2
RF3
RF4
GENERAL DESCRIPTION:
The FMS2016-005 is a low loss, high power and
linear single pole four throw Gallium Arsenide
antenna switch designed for use in mobile handset
and other high power switching applications. The
die is fabricated using the Filtronic FL05 0.5µm
switch process technology, which offers excellent
performance optimised for switch applications.
TYPICAL APPLICATIONS:
•
•
Multi-band GSM/DCS/PCS/EDGE handset
modules
High power and linear RF switching
applications
.
ELECTRICAL SPECIFICATIONS:
Parameter
Test Conditions
Min
Typ
Max
Units
0.5 – 1.0 GHz
0.55
0.75
dB
1.0 – 2.0 GHz
0.65
0.85
dB
Insertion Loss
Return Loss
0.5 – 2.5 GHz
Isolation
0.5 – 1.0 GHz
RF1 – RF3, RF1 – RF2, RF2 – RF4
1.0 – 2.0 GHz
Isolation
0.5 – 1.0 GHz
RF3 – RF4
1.0 – 2.0 GHz
16
30
26
20
dB
34
dB
32
dB
34
dB
30
dB
1 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-60
dBc
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-65
dBc
1 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-60
dBc
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-65
dBc
2nd Harmonic Level
3rd Harmonic Level
µs
Switching speed: Trise, Tfall
10% to 90% RF and 90% to 10% RF
Ton, Toff
50% control to 90% RF and 50% control to 10% RF
Control Current
+35dBm RF input @1GHz
<10
0.9 & 0.91 GHz, Pin = +20 dBm
>68
dBm
1.85 & 1.86 GHz, Pin = +20 dBm
>66
dBm
1.0GHz
>38
dBm
2.0GHz
>37
dBm
<0.3
0.5
µs
15
µA
IP3
P0.1dB
Note:
TAMBIENT = 25°C, Vctrl = 0V/2.7V, ZIN = ZOUT = 50Ω
External DC blocking capacitors are required on all RF ports (typ: 47pF)
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2016-005
Datasheet v3.0
ABSOLUTE MAXIMUM RATINGS:
PARAMETER
SYMBOL
ABSOLUTE
MAXIMUM
Max Input Power
Pin
+38dBm
Control Voltage
Vctrl
+6V
Operating Temperature
Toper
-40°C to +100°C
Storage Temperature
Tstor
-55°C to +150°C
Note: Exceeding any one of these absolute maximum
ratings may cause permanent damage to the device.
TRUTH TABLE:
V1
V2
V3
V4
PATH(S)
High
Low
Low
Low
RF1 to ANT
Low
High
Low
Low
RF2 to ANT
Low
Low
High
Low
RF3 to ANT
Low
Low
Low
High
RF4 to ANT
Note: High: 2.7V to 6V; Low: 0V to 0.2V
PAD LAYOUT:
V1
Pin 1
12
ANT
11
V2
10
RF1
GND
RF3
PADDLE
2
3
4
5
V3
6
V4
9
RF2
8
GND
7
RF4
PAD
REF
PAD
NAME
DESCRIPTION
1
RF1
RF Port 1
2
GND
Ground Connection
3
RF3
RF Port 3
4
V3
Vctrl3 (ANT to RF3)
5
N/C
No Connection
6
V4
Vctrl4 (ANT to RF4)
7
RF4
RF Port 4
8
GND
Ground Connection
9
RF2
RF Port 2
10
V2
Vctrl2 (ANT to RF2)
11
ANT
Antenna Port
12
V1
Vctrl1 (ANT to RF1)
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2016-005
Datasheet v3.0
TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD:
Note: Measurement Conditions VCTRL= 0V (low) & 2.5V (high), TAMBIENT = 25°C unless otherwise stated
Insertion Loss
RF1 to RF2 Isolation
FMS2016QFN RF1 to RF2 ISOLATION
FMS2016QFN INSERTION LOSS
0
0
-0.1
-5
-0.2
-10
-0.3
-0.4
-15
dB
dB
-0.5
-0.6
-0.7
-20
-25
-0.8
-0.9
-30
-1
-35
-1.1
-1.2
-40
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
0.5
RF3 to RF4 Isolation
1.5
2
Frequency (GHz)
2.5
3
3.5
RF1 to RF3 AND RF2 to RF4 Isolation
FMS2016QFN RF3 to RF4 ISOLATION
FMS2016QFN RF1 to RF3 and RF2 to RF4 ISOLATION
0
0
-5
-5
-10
-10
-15
-15
dB
dB
1
-20
-20
-25
-25
-30
-30
-35
-35
-40
-40
0.5
1
1.5
2
Frequency (GHz)
2.5
3
0.5
3.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
Return Loss
FMS2016QFN RETURN LOSS
-15
-20
dB
-25
-30
-35
-40
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2016-005
Datasheet v3.0
EVALUATION BOARD COMPONENT SIDE LAYOUT:
C1
C1
C1
C1
C1
C2 C2 C2 C2
BILL OF MATERIALS:
LABEL
COMPONENT
Board
Preferred evaluation board material is 0.25 mm thick ROGERS RT4350. All RF tracks should be 50 ohm characteristic material.
RFC
SMA RF connector
DCC
DC connector
C1
Capacitor, 47pF, 0402
C2
Capacitor, 470pF, 0603
EVALUATION BOARD DE-EMBEDDING DATA (MEASURED):
Insertion Loss
Return Loss
FMS2016QFN CALIBRATION BOARD INSERTION LOSS
FMS2016QFN CALIBRATION BOARD RETURN LOSS
0
-15
-0.1
-0.2
-20
-0.3
-25
dB
dB
-0.4
-0.5
-0.6
-30
-0.7
-0.8
-35
-0.9
-1
-40
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2016-005
Datasheet v3.0
QFN 12 LEAD 3*3 PACKAGE OUTLINE:
Note: PIN1
Identifier is at
ground potential
•
NiPdAu finish for Military and High reliability applications
TAPE & REEL SPECIFICATION:
TAPE DIMENSIONS
DESCRIPTION
SYMBOL
SIZE (MM)
Perforation
Diameter
D0
1.5 ±0.1
Pitch
P0
4.0 ±0.1
Position
E1
1.75 ±0.1
Length
A0
3.3 ±0.1
Width
B0
3.3 ±0.1
Depth
K
1.1 ±0.1
Cavity to Perforation
P2
2.0 ±0.1
F
5.5 ±0.1
W
12 ±0.3
Cavity
Distance between centrelines
(length direction)
Cavity to Perforation
(width direction)
Carrier tape
Width
5
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2016-005
Datasheet v3.0
Application Notes and design data, including
S-parameters, are available on request.
PREFERRED ASSEMBLY INSTRUCTIONS:
Available on request
HANDLING PRECAUTIONS:
DISCLAIMERS:
To avoid damage to
the
devices
care
should be exercised
during
handling.
Proper
Electrostatic
Discharge
(ESD)
precautions should be observed at all stages
of storage, handling, assembly, and testing.
These devices should be treated as Class 1A
(250-500 V) as defined in JEDEC Standard
No. 22-A114. Further information on ESD
control measures can be found in MIL-STD1686 and MIL-HDBK-263.
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
PART NUMBER
DESCRIPTION
Packaged Die
FMS2016-005-TR
Tape & Reel (minimum quantity: 1k pcs)
FMS2016-005-TB
FMS2016-005-EB
Packaged Die supplied in a Tube
Packaged Die mounted on Evaluation
Board
APPLICATION NOTES & DESIGN DATA:
6
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com