2N6798 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) FEATURES 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . • V(BR)DSS = 200V 5 .0 8 (0 .2 0 0 ) ty p . 1 2 3 • ID = 5.5A 2 .5 4 (0 .1 0 0 ) • RDSON = 0.40W 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 4 5 ° TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Drain–Source Voltage Gate–Source Voltage Drain Current Continuous TC = 25°C TC = 100°C Drain Current Pulsed IDM IA Avalanche Current PD Total Device Dissipation @ TC = 25°C TC = 100°C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction to Case RqJC Thermal Resistance Junction to Ambient VDS VGS ID TL Maximum Lead Temperature 1.5mm from Case for 10 secs. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 200V ±20V 5.5A 3.5A 22A 3.1A 25W 10W –55 to +150°C 5.0°CW 175°CW 300°C Prelim. 6/99 2N6798 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Test Conditions ID = 1000mA V(BR)DSS Drain–Source Breakdown Voltage VGS = 0 VGS(th) Gate Thresshold Voltage VDS=VGS ID = 250mA IGSS Gate–Body Leakage VDS = 0 VGS = ±20V VDS = 2.2 VGS = 10V 1 ID(on) On-State Drain Current IDSS Zero Gate Voltage Drain Current rDS(on) Drain–Source On–Resistance1 Transconductance1 Min. Typ. 200 2.0 4.0 100 5.5 Tj = 125°C VGS = 10V ID = 3.5A VDS = 5V ID = 3.5A VDS = 25V VGS = 0 gfs Forward Ciss Input Capacitance Coss Output capacitance Crss Reverse Transfer Capacitance tdon Turn–On Delay Time VDD = 77V RL = 22W tr RiseTime ID = 3.5A VGEN = 10V td(of) Turn off Delay Time tf FallTime f = 1.0MHZ RG = 7.5 ohms 25 250 0.25 2.5 V nA A VDS =0.8 x V(BR)DSS VGS = 0 Max. Unit 4.0 3.0 mA W s(É) 600 pF 250 80 8 30 42 50 12 50 30 40 ns SOURCE DRAIN DIODE RATING CHARACTERISTICS VSD Diode Forward Voltage1 IS Continues Current IF = IS VGS = 0 1.4 5.5 Current2 ISM Pulsed trr Reverse Recovery Time Qrr Reverse Recovered Charge V A 22 IF = IS dIF/DT = 100A/mS 150 500 6 ns mC 1) Pulse test : Pulse Width < 300ms ,Duty Cycle < 2% 2) Pulse width limited by maximum juction temperature Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 6/99