SEME BFC40 LAB N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS TO247–AD Package Outline. Dimensions in mm (inches) (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) 2 3 VDSS ID(cont) RDS(on) 1.65 (0.065) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 1 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) Pin 1 – Gate 5.25 (0.215) BSC Pin 2 – Drain 1500V 2A 8.00W Pin 3 – Source ABSOLUTE MAXIMUM RATINGS (TAMB = 25°C unless otherwise stated) VDSS Drain – Source Voltage 1500 V ID Continuous Drain Current 2 A IDM Pulsed Drain Current 4 A VGS Gate – Source Voltage ±20 V PD Total Power Dissipation 50 W TJ , TSTG Operating and Storage Junction Temperature Range –55 to +150 °C ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise stated) BVDSS Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 1mA RDS(ON) Drain – Source On State Resistance VGS =10V , ID = 1A IDSS Zero Gate Voltage Drain Current VDS = 1200V , VGS = 0V 100 W mA IGSS Gate – Source Leakage Current VGS = ±20V , VDS = 0V ±100 nA VGS(off) Cutoff Voltage VDS = 10V , ID = 1.0mA 3.5 V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn–on Time VGS = 10V 30 toff Turn-off Time ID = 1A 200 VSD Diode Forward Voltage VGS = 0 , IS = 2A 1.0 |YFS| Forward Transfer Admittance VDS = 20V , ID = 1A Semelab plc. Min. 1500 Max. Unit V 8.0 11.0 1.5 550 VDS = 20V 90 f = 1MHz Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Typ. pF 30 1.0 1.5 ns 1.5 V S Prelim. 2/96