IRF230 TO–3 (TO–204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain – Source Voltage1 200 V VDGR Drain - Gate Voltage (RGS = 20KW)1 200 V ID 9.0 A ID Continuous Drain Current@ Tcase = 25°C Continuous Drain Current@ Tcase = 100°C 6.0 A IDM Pulsed Drain Current 3 36 A VGS Gate – Source Voltage ±20 V PD Maximum Power Dissipation @ Tcase = 25°C Derate Linearly 75 W 0.6 W/°C ILM Inductive Current Clamped 36 A EAS* Single Pulse Avalanche energy Rating 150 mj TJ , TSTG TL Operating and Storage Junction Temperature Range –55 to 150 °C 300 °C 4 Lead Temperature : 0.063” from Case for 10 Sec. THERMAL CHARACTERISTICS Characteristic RqJC Junction to Case RqCS Case to Sink (Mounting Surface flat, smooth and greased. RqJA Junction to Ambient (Free air operation) Min. Typ. Max. Unit 1.67 0.1 °C/W 30 NOTES 1 TJ = +25°C to + 150°C 2 Pulse Test PUlse Width # 300ms. Duty Cycle # 2% 3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature. 4 VDD = 20V starting TJ = +25°C , L = 3.37mH, RGS = 50W, IPEAK = 9A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 6/00 IRF230 ELECTRICAL (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS BVDSS Drain–Source Breakdown Voltage VGS(TH) Gate Threshold Voltage VGS = 0V , ID = 250mA VDS = VGS , ID = 250mA 200 V 2 4 V IGSS Gate Source Leakage forward VGS = 20V 100 IGSS Gate Source Leakage Reverse VGS = -20V -100 VDS = Max rating IDSS Zero Gate Voltage Drain Current VGS=0V VGS = 10V rDS(ON)2 Static Drain–Source On State Resistance VGS = 10V , Forward Transconductance gts2 VDS> 50V 1000 TJ = +125°C VDS> ID(ON) xrDS(ON) Max. ID(ON)2 On-State Drain Current 250 VDS = Max rating x0.8, VGS=0V 9 IDS = 5.0A ID =5.0A nA A 0.25 3.0 mA 0.4 4.8 W S(W) DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(ON) Turn–On Delay Time tr Rise Time VDD•100V, td(OFF) Turn-off Delay Time RG = 7.5W tf Fall Time VGS = 0V, VDS = 25V f = 1MHz VGS = 10V 600 250 pF 80 ID = 9A VDS = 0.8 VMax 19 30 10 nC 9.0 35 ID = 5.0A, 80 ns 60 40 SOURCE – DRAIN DIODE CHARACTERISTICS IS Continuous Source Current (Body Diode) Modified MOSFET 9.0 symbol showing the integral ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge tON Forward Turn-on Time A reverse P-N junc. rectifier. TJ = +25°C , 36 IS = 9A 2.0 VGS = 0V TJ = +150°C , IS = 9A VGS = 0V dlF/dt = 100A/ms TJ = +150°C , IS = 9A VGS = 0V dlF/dt = 100A/ms V 450 ns 3.0 mC NEGLIGIBLE PACKAGE CHARACTERISTICS LD Internal Drain Inductance LS Internal Source Inductance Semelab plc. 5.0 (from 6mm down source lead to source bond pad) Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 12.5 nH Prelim. 6/00