NTE NTE2312

NTE2312
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115V and 220V switch–mode applications such as switching regulators, inverters, motor controls,
solenoid/relay drivers, and deflection circuits.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Emitter Current, IE
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
400
–
–
V
VCEV = 700V, VBE(off) = 1.5V
–
–
1
mA
VCEV = 700V, VBE(off) = 1.5V,
TC = +100°C
–
–
5
mA
IEBO
VEB = 9V, Ic = 0
–
–
1
mA
hFE
IC = 2A, VCE = 5V
8
–
60
IC = 5A, VCE = 5V
5
–
30
IC = 2A, IB = 0.4A
–
–
1
V
IC = 5A, IB = 1A
–
–
2
V
IC = 8A, IB = 2A
–
–
3
V
IC = 5A, IB = 1A, TC = +100°C
–
–
3
V
IC = 2A, IB = 0.4A
–
–
1.2
V
IC = 5A, IB = 1A
–
–
1.6
V
IC = 5A, IB = 1A, TC = +100°C
–
–
1.5
V
IC = 500mA, VCE = 10V, f = 1MHz
4
–
–
MHz
VCB = –10V, IE = 0, f = 0.1MHz
–
110
–
pF
VCC = 125V, IC = 5A,
IB1 = IB2 = 1A, tp = 25µs,
µ
Duty Cycle ≤ 1%
–
0.05
0.1
µs
–
0.8
1.5
µs
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 10mA, IB = 0
ICEV
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Dynamic Characteristics
Current–Gain Bandwidth Product
Output Capacitance
fT
Cob
Switching Characteristics (Resistive Load)
Delay Time
td
Rise Time
tr
Storage Time
ts
–
1.0
3.0
µs
Fall Time
tf
–
0.15
0.7
µs
–
0.86
2.3
µs
–
0.14
0.7
µs
Switching Characteristics (Inductive Load), Clamped
Voltage Storage Time
tsv
Crossover Time
tc
IC = 5A, Vclamp = 300V, IB1 = 1A,
VBE(off) = 5V, TC = +100°C
°
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab