ST 13002T / ST 13003T NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection circuits. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Value Parameter Symbol Unit ST13002T ST13003T Collector Emitter Voltage VCEO(sus) 300 400 V Collector Emitter Voltage VCEV 600 700 V Emitter Base Voltage VEBO 9 V IC 1.5 A ICM 3 IB 0.75 IBM 1.5 IE 2.25 IEM 4.5 Collector Current - Continuous Collector Current - Peak 1) Base Current - Continuous Base Current - Peak 1) Emitter Current - Continuous Emitter Current - Peak 1) Total Power Dissipation @ TA = 25 C O Derate above 25 C O Total Power Dissipation @ TC = 25 OC Derate above 25 C O PD PD A A 1.4 W 11.2 mW/OC 40 W 320 mW/OC Operating and Storage Junction Temperature Range TJ, Ts -65 to +150 Thermal Resistance ,Junction to Ambient RθJA 89 O Thermal Resistance ,Junction to Case RθJC 3.12 O 1) C O C/W C/W Pulse Test: Pulse Width=5ms, Duty Cycle≤10%. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 28/04/2006 ST 13002T / ST 13003T Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit at VCE = 2 V, IC = 0.5 A hFE 8 - 40 - at VCE = 2 V, IC = 1 A hFE 5 - 25 - DC Current Gain Collector Emitter Sustaining Voltage at IC = 10 mA ST13002T VCEO(sus) 300 - - V at IC=10mA ST13003T VCEO(sus) 400 - - V ICEV - - 1 mA IEBO - - 1 mA at IC = 0.5 A, IB = 0.1 A VCE(sat) - - 0.5 V at IC = 1 A, IB = 0.25 A VCE(sat) - - 1 V at IC = 1.5 A, IB = 0.5 A VCE(sat) - - 3 V VBE(sat) - - 1 V VBE(sat) - - 1.2 V fT 4 10 - MHz Cob - 21 - pF td - - 0.1 µs tr - - 1 µs ts - - 4 µs tf - - 0.7 µs Collector Cutoff Current at VCEV = Rated Value, VBE(off) = 1.5 V Emitter Cutoff Current at VEB = 9 V Collector Emitter Saturation Voltage Base Emitter Saturation Voltage at IC = 0.5 A, IB = 0.1 A at IC = 1 A, IB = 0.25 A Current Gain Bandwidth Product at VCE = 10 V, IC = 100 mA, f = 1 MHz Output Capacitance at VCB = 10 V, f = 0.1 MHz Delay Time (VCC = 125 V, IC = 1 A, Rise Time Storage Time IB1 = IB2 = 0.2 A, tp = 25 µs, Duty Cycle≤1%) Fall Time Storage Time (IC = 1 A,Vclamp = 300 V, tsv - - 4 µs Crossover Time IB1 = 0.2 A,VBE(off) = 5 V, tc - - 0.75 µs Fall Time TC = 100 C) tfi - 0.15 - µs O 1) Pulse Test: Pulse Width=300μs, Duty Cycle≤2%. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 28/04/2006