SEMTECH_ELEC ST13003T

ST 13002T / ST 13003T
NPN Silicon Power Transistors
These devices are designed for high-voltage,
high-speed power switching inductive circuits
where fall time is critical.
They are particularly suited for 115 and 220V
SWITCHMODE applications such as Switching
Regulator’s, Inverters, Motor Controls, Solenoid /
Relay drivers and Deflection circuits.
E
C
B
TO-126 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Value
Parameter
Symbol
Unit
ST13002T
ST13003T
Collector Emitter Voltage
VCEO(sus)
300
400
V
Collector Emitter Voltage
VCEV
600
700
V
Emitter Base Voltage
VEBO
9
V
IC
1.5
A
ICM
3
IB
0.75
IBM
1.5
IE
2.25
IEM
4.5
Collector Current - Continuous
Collector Current - Peak
1)
Base Current - Continuous
Base Current - Peak
1)
Emitter Current - Continuous
Emitter Current - Peak
1)
Total Power Dissipation @ TA = 25 C
O
Derate above 25 C
O
Total Power Dissipation @ TC = 25 OC
Derate above 25 C
O
PD
PD
A
A
1.4
W
11.2
mW/OC
40
W
320
mW/OC
Operating and Storage Junction Temperature Range
TJ, Ts
-65 to +150
Thermal Resistance ,Junction to Ambient
RθJA
89
O
Thermal Resistance ,Junction to Case
RθJC
3.12
O
1)
C
O
C/W
C/W
Pulse Test: Pulse Width=5ms, Duty Cycle≤10%.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 28/04/2006
ST 13002T / ST 13003T
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
at VCE = 2 V, IC = 0.5 A
hFE
8
-
40
-
at VCE = 2 V, IC = 1 A
hFE
5
-
25
-
DC Current Gain
Collector Emitter Sustaining Voltage
at IC = 10 mA
ST13002T
VCEO(sus)
300
-
-
V
at IC=10mA
ST13003T
VCEO(sus)
400
-
-
V
ICEV
-
-
1
mA
IEBO
-
-
1
mA
at IC = 0.5 A, IB = 0.1 A
VCE(sat)
-
-
0.5
V
at IC = 1 A, IB = 0.25 A
VCE(sat)
-
-
1
V
at IC = 1.5 A, IB = 0.5 A
VCE(sat)
-
-
3
V
VBE(sat)
-
-
1
V
VBE(sat)
-
-
1.2
V
fT
4
10
-
MHz
Cob
-
21
-
pF
td
-
-
0.1
µs
tr
-
-
1
µs
ts
-
-
4
µs
tf
-
-
0.7
µs
Collector Cutoff Current
at VCEV = Rated Value, VBE(off) = 1.5 V
Emitter Cutoff Current
at VEB = 9 V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
at IC = 0.5 A, IB = 0.1 A
at IC = 1 A, IB = 0.25 A
Current Gain Bandwidth Product
at VCE = 10 V, IC = 100 mA, f = 1 MHz
Output Capacitance
at VCB = 10 V, f = 0.1 MHz
Delay Time
(VCC = 125 V, IC = 1 A,
Rise Time
Storage Time
IB1 = IB2 = 0.2 A, tp = 25 µs,
Duty Cycle≤1%)
Fall Time
Storage Time
(IC = 1 A,Vclamp = 300 V,
tsv
-
-
4
µs
Crossover Time
IB1 = 0.2 A,VBE(off) = 5 V,
tc
-
-
0.75
µs
Fall Time
TC = 100 C)
tfi
-
0.15
-
µs
O
1) Pulse Test: Pulse Width=300μs, Duty Cycle≤2%.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 28/04/2006