NTE NTE2319

NTE2319
Silicon NPN Transistor
High Voltage, High Speed Power Switch
Description:
The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated
switchmode applications.
Features:
D Fast Turn–On Times @ TC = +100°C:
Inductive Fall Time: 50ns Typ
Inductive Crossover Time: 90ns Typ
Inductive Storage Time: 800ns Typ
D 100°C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Current
Applications:
D Switching Regulators
D Inverters
D Solenoids
D Relay Drivers
D Motor Controls
D Deflection Circuits
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Device Dissipation, PD
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse Test: Pulse Width ≤ 5µs, Duty Cycle ≥ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCEO(sus) Table 2, IC = 100mA, IB = 0
450
–
–
V
TC = +25°C
–
–
0.25
mA
TC = +100°C
–
–
1.5
mA
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ICEV
VCEV = 850V,
VBE(off) = 1.5V
ICER
VCE = 850V, RBE = 50Ω, TC = +100°C
–
–
2.5
mA
IEBO
VEB = 6V, IC = 0
–
–
1.0
mA
IC = 5A, IB = 700mA
–
–
2.5
V
TC = +25°C
–
–
3.0
V
TC = +100°C
–
–
3.0
V
TC = +25°C
–
–
1.5
V
TC = +100°C
–
–
1.5
V
ON Characteristics (Note 2)
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 10A, IB = 1.3A
Base–Emitter Saturation Voltage
DC Current Gain
VBE(sat)
IC = 10A, IB = 1.3A
hFE
IC = 15A, VCE = 5V
5
–
–
Cob
VCB = 10V, IE = 0, ftest = 1kHz
–
–
400
pF
IC = 10A,
VCC = 250V,
IB1 = 1.3A,
PW = 30νs,
Duty Cycle ≤ 2%
–
20
–
ns
–
200
–
ns
–
1200
–
ns
–
200
–
ns
–
650
–
ns
–
80
–
ns
–
800
1800
ns
–
50
200
ns
–
90
250
ns
–
1050
–
ns
Dynamic Characteristics
Output Capacitance
Switching Characteristics
Resistive Load (Table 1)
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
Storage Time
ts
Fall Time
tf
IB2 = 2.6A,
RB = 1.6Ω
Ω
VBE(off) = 5V
Inductive Load (Table 2)
Storage Time
tsv
Fall Time
tfi
Crossover Time
tc
Storage Time
tsv
Fall Time
tfi
–
70
–
ns
Crossover Time
tc
–
120
–
ns
IC = 10A,
IB1 = 1.3A,
VBE(off) = 5V,
VCE(pk) = 400V
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
TC = +100°C
TC = +150°C
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case