NTE912 Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially–Connected Transistor Pair) Description: The NTE912 consists of five general–purpose silicon NPN transistors on a common monolithic substrate in a 14–Lead DIP type package. Two of the transistors are internally connected to form a differentially–connected pair. The transistors of the NTE912 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. Features: D Two Matched Pairs of Transistors: VBE matched ±5mV Input Offset Current 2µA Max. @ IC = 1mA D 5 General Purpose Monolithic Transistors D Operation from DC to 120MHz D Wide Operating Current Range D Low Noise Figure: 3.2dB Typ @ 1kHz Applications: D General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency Range from DC to VHF D Custom Designed Differential Amplifiers D Temperature Compensated Amplifiers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation (TA ≤ +55°C), PD Each Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/°C Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector Substrate Voltage (Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL . . . . . . . . . . . +265°C Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate (Pin13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Collector Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 20 60 – V Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 – V Collector Substrate Breakdown Voltage V(BR)CIO IC = 10µA, ICI = 0 20 60 – V Emitter Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 – V Collector Cutoff Current Static Forward Current Transfer Ratio ICBO VCB = 10V, IE = 0 – 0.002 40 nA ICEO VCE = 10V, IB = 0 – – 0.5 µA hFE VCE = 3V IC = 10mA – 100 – IC = 1mA 40 100 – IC = 10µA – 54 – VCE = 3V, IC = 1mA – 0.3 2.0 µA VCE = 3V IE = 1mA – 0.715 – V IE = 10mA – 0.800 – V Input Offset Current for Matched Pair Q1 and Q2. |I IO1– I IO2| Base Emitter Voltage VBE Magnitude of Input Offset Voltage for Differential Pair |V BE1 – V BE2| VCE = 3V, IC = 1mA – 0.45 5.0 mV Magnitude of Input Offset Voltage for Isolated Transistors |V BE3 – V BE4| |V BE – V BE | |V BE – V BE | VCE = 3V, IC = 1mA – 0.45 5.0 mV 4 5 5 3 Temperature Coefficient of Base Emitter Voltage ∆VBE ∆T VCE = 3V, IC = 1mA – –1.9 – mV/°C Collector Emitter Saturation Voltage VCES IB = 1mA, IC = 10mA – 0.23 – V Temperature Coefficient: Magnitude of Input–Offset Voltage |∆VIO| VCE = 3V, IC = 1mA – 1.1 – µV/°C ∆T Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Low–Frequency Noise Figure NF f = 1kHz, VCE = 3V, IC = 100µA, Source Resistance = 1kΩ – 3.25 – dB Low–Frequency, Small–Signal Equivalent Circuit Characteristics: Forward Current Transfer Ratio hfe f = 1kHz, VCE = 3V, IC = 1mA – 110 – Short–Circuit Input Impedance hie – 3.5 – kΩ Open–Circuit Output Impedance hoe – 15.6 – µmhos Open–Circuit Reverse Voltage Transfer Ratio hre – 1.8x10–4 – – 31–j1.5 – Dynamic Characteristics Admittance Characteristics: Forward Transfer Admittance Yfe f = 1kHz, VCE = 3V, IC = 1mA Input Admittance Yie – 0.3+j0.04 – Output Admittance Yoe – 0.001+j0.03 – Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max 300 550 – Unit Dynamic Characteristics (Cont’d) Gain–Bandwidth Product fT VCE = 3V, IC = 3mA Emitter Base Capacitance CEB VEB = 3V, IE = 0 – 0.6 – pF Collector Base Capacitance CCB VCB = 3V, IC = 0 – 0.58 – pF Collector Substrate Capacitance CCI VCS = 3V, IC = 0 – 2.8 – pF Pin Connection Diagram Q1 Vout 1 14 Q5 Vout Q1 Vin 2 13 Substrate/Q5 Vin Q1/Q2 Vin 3 12 Q5 Vin Q2 Bias 4 11 Q4 Vout Q2 Vin 5 10 Q4 Vin Q3 Vin 6 9 Q4 Vin Q3 Vin 7 8 Q3 Vout 14 8 1 7 .785 (19.95) Max .300 (7.62) .200 (5.08) Max .100 (2.45) .600 (15.24) .099 (2.5) Min