Order this document by H11B1/D SEMICONDUCTOR TECHNICAL DATA [CTR = 500% Min] GlobalOptoisolator ! [CTR = 100% Min] *Motorola Preferred Device The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high output current (IC) at low LED input currents (IF). STYLE 1 PLASTIC • High Sensitivity to Low Input Drive Current (IF = 1 mA) • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. 6 1 Applications • Appliances, Measuring Instruments STANDARD THRU HOLE CASE 730A–04 • I/O Interfaces for Computers • Programmable Controllers • Interfacing and coupling systems of different potentials and impedances SCHEMATIC • Solid State Relays • Portable Electronics 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating 6 5 2 Symbol Value Unit NC 3 INPUT LED Reverse Voltage VR 3 Volts Forward Current — Continuous IF 60 mA LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C PD 150 mW 1.41 mW/°C OUTPUT DETECTOR Collector–Emitter Voltage VCEO 25 Volts Emitter–Base Voltage VEBO 7 Volts Collector–Base Voltage VCBO 30 Volts Collector Current — Continuous IC 100 mA Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C PD 150 mW 1.76 mW/°C VISO 7500 Vac(pk) Total Device Power Dissipation @ TA = 25°C Derate above 25°C PD 250 2.94 mW mW/°C Ambient Operating Temperature Range(2) TA – 55 to +100 °C Tstg – 55 to +150 °C PIN 1. 2. 3. 4. 5. 6. 4 LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) TL 260 °C 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 1 Optoelectronics Device Data Motorola Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic Symbol Min Typ(1) Max Unit INPUT LED Forward Voltage (IF = 10 mA) H11B1 VF — 1.15 1.5 Volts Forward Voltage (IF = 50 mA) H11B3 VF — 1.34 1.5 Volts Reverse Leakage Current (VR = 3 V) IR — — 10 µA Capacitance (V = 0 V, f = 1 MHz) CJ — 18 — pF ICEO — 5 100 nA Collector–Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 25 80 — Volts Collector–Base Breakdown Voltage (IC = 100 µA) V(BR)CBO 30 100 — Volts Emitter–Collector Breakdown Voltage (IE = 100 µA) V(BR)ECO 7 — — Volts DC Current Gain (IC = 5 mA, VCE = 5 V) (Typical Value) hFE — 16K — — Collector–Emitter Capacitance (f = 1 MHz, VCE = 5 V) CCE — 4.9 — pF Collector–Base Capacitance (f = 1 MHz, VCB = 5 V) CCB — 6.3 — pF Emitter–Base Capacitance (f = 1 MHz, VEB = 5 V) CEB — 3.8 — pF IC (CTR)(2) 5 (500) 1 (100) — — — — mA (%) VCE(sat) — 0.7 1 Volts Turn–On Time (IF = 5 mA, VCC = 10 V, RL = 100 Ω)(3) ton — 3.5 — µs Turn–Off Time (IF = 5 mA, VCC = 10 V, RL = 100 Ω)(3) toff — 95 — µs tr — 1 — µs OUTPUT DETECTOR Collector–Emitter Dark Current (VCE = 10 V) COUPLED Output Collector Current (IF = 1 mA, VCE = 5 V) H11B1 H11B3 Collector–Emitter Saturation Voltage (IC = 1 mA, IF = 1 mA) Rise Time (IF = 5 mA, VCC = 10 V, RL = 100 Ω)(3) Fall Time (IF = 5 mA, VCC = 10 V, RL = 100 Ω)(3) tf — 2 — µs Isolation Voltage (f = 60 Hz, t = 1 sec)(4) VISO 7500 — — Vac(pk) Isolation Resistance (V = 500 V)(4) RISO 1011 — — Ω Isolation Capacitance (V = 0 V, f = 1 MHz)(4) CISO — 0.2 — pF 1. 2. 3. 4. Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For test circuit setup and waveforms, refer to Figure 11. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2 VF, FORWARD VOLTAGE (VOLTS) PULSE ONLY PULSE OR DC 1.8 1.6 1.4 TA = –55°C 1.2 25°C 100°C 1 1 10 100 IF, LED FORWARD CURRENT (mA) 1000 Figure 1. LED Forward Voltage versus Forward Current 2 I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS 10 NORMALIZED TO: IF = 10 mA TA = 25°C 1 0.1 TA = –55°C THRU +25°C +70°C +100°C 0.01 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 Figure 2. Output Current versus Input Current Motorola Optoelectronics Device Data 120 IF = 10 mA 100 80 5 mA 60 40 2 mA 20 0 1 mA 0 1 2 3 4 5 6 7 8 9 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 10 1.3 NORMALIZED TO TA = 25°C 1.2 1.1 1 0.9 0.8 0.7 –60 –40 –20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 10 7 5 NORMALIZED TO TA = 25°C 2 1 0.7 0.5 0.2 0.1 –60 –40 –20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 105 104 NORMALIZED TO: VCE = 10 V TA = 25°C 103 VCE = 30 V 102 10 V 10 1 0 Figure 5. Collector–Emitter Voltage versus Ambient Temperature 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 Figure 6. Collector–Emitter Dark Current versus Ambient Temperature 1000 1000 RL = 1000 VCC = 10 V RL = 1000 t, TIME (µs) t, TIME (µs) 100 100 100 10 10 100 10 VCC = 10 V 10 1 0.1 100 Figure 4. Output Current versus Ambient Temperature ICEO, COLLECTOR–EMITTER DARK CURRENT (NORMALIZED) VCE , COLLECTOR–EMITTER VOLTAGE (NORMALIZED) Figure 3. Collector Current versus Collector–Emitter Voltage I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) IC, COLLECTOR CURRENT (mA) 140 0.2 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) Figure 7. Turn–On Switching Times (Typical Values) Motorola Optoelectronics Device Data 50 100 1 0.1 0.2 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 100 Figure 8. Turn–Off Switching Times (Typical Values) 3 12 100 IB = 0.7 µA IF = 0 0.6 µA C, CAPACITANCE (pF) IC, TYPICAL COLLECTOR CURRENT (mA) 14 10 0.5 µA 8 0.4 µA 6 0.3 µA 4 0.2 µA 2 0.1 µA 2 4 6 8 10 12 14 16 18 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) f = 1 MHz CCB 10 CEB 0 0 CLED 20 1 0.01 0.1 Figure 9. DC Current Gain (Detector Only) CCE 1 V, VOLTAGE (VOLTS) 10 100 Figure 10. Capacitance versus Voltage TEST CIRCUIT WAVEFORMS INPUT PULSE VCC = 10 V RL = 100 Ω IF = 5 mA INPUT 10% OUTPUT OUTPUT PULSE 90% tr tf toff ton Figure 11. Switching Time Test Circuit and Waveforms 4 Motorola Optoelectronics Device Data PACKAGE DIMENSIONS –A– 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4 –B– 1 3 F 4 PL C N –T– L K SEATING PLANE J 6 PL 0.13 (0.005) G M E 6 PL D 6 PL 0.13 (0.005) M T A B M M T B M M A M DIM A B C D E F G J K L M N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0_ 15 _ 0.015 0.100 STYLE 1: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 7.62 BSC 0_ 15 _ 0.38 2.54 ANODE CATHODE NC EMITTER COLLECTOR BASE CASE 730A–04 ISSUE G –A– 6 4 –B– 1 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 F 4 PL L H C –T– G J K 6 PL E 6 PL 0.13 (0.005) D 6 PL 0.13 (0.005) M T A M B M SEATING PLANE T B M A M CASE 730C–04 ISSUE D Motorola Optoelectronics Device Data M DIM A B C D E F G H J K L S INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.020 0.025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90 *Consult factory for leadform option availability 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. –A– 6 4 –B– 1 3 L N F 4 PL C –T– SEATING PLANE G J K DIM A B C D E F G J K L N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 10.16 10.80 0.38 1.02 D 6 PL E 6 PL 0.13 (0.005) M T A M B M *Consult factory for leadform option availability CASE 730D–05 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ *H11B1/D* Motorola Optoelectronics Device Data H11B1/D