Order this document by H11D1/D SEMICONDUCTOR TECHNICAL DATA GlobalOptoisolator ! ! ! ! "!"! ! [CTR = 20% Min] *Motorola Preferred Device STYLE 1 PLASTIC The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransistor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and solid state relays. • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications 6 1 STANDARD THRU HOLE CASE 730A–04 • Copy Machines • Interfacing and coupling systems of different potentials and impedances • Monitor and Detection Circuits • Solid State Relays SCHEMATIC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value 1 6 2 5 3 4 Unit INPUT LED Forward Current — Continuous IF 60 mA Forward Current — Peak Pulse Width = 1 µs, 330 pps IF 1.2 Amps LED Power Dissipation @ TA = 25°C Derate above 25°C PD 120 1.41 mW mW/°C Collector–Emitter Voltage VCER 300 Volts Emitter–Collector Voltage VECO 7 Volts Collector–Base Voltage VCBO 300 Volts Collector Current — Continuous IC 100 mA Detector Power Dissipation @ TA = 25°C Derate above 25°C PD 150 1.76 mW mW/°C Total Device Power Dissipation @ TA = 25°C Derate above 25°C PD 250 2.94 mW mW/°C Operating Temperature Range(3) TJ – 55 to +100 °C Tstg – 55 to +150 °C TL 260 °C VISO 7500 Vac(pk) OUTPUT TRANSISTOR PIN 1. 2. 3. 4. 5. 6. ANODE CATHODE N.C. EMITTER COLLECTOR BASE TOTAL DEVICE Storage Temperature Range(3) Soldering Temperature (10 s) Isolation Surge Voltage Peak ac Voltage, 60 Hz, 1 Second Duration(1) 1. 1. 2. 1. 3. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. H11D1 is rated @ 5656 Volts peak (VISO). H11D2 is rated @ 3535 Volts peak (VISO) Otherwise they are identical, both parts built by Motorola are rated @ 7500 Volts peak (VISO) Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 1 Optoelectronics Device Data Motorola Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Symbol Min Typ(1) Max Unit Reverse Leakage Current (VR = 6 V) IR — — 10 µA Forward Voltage (IF = 10 mA) VF — 1.2 1.5 Volts Capacitance (V = 0 V, f = 1 MHz) C — 18 — pF — — — — 100 250 nA µA — — 300 — — 300 7 — — 2 (20) — — VISO 7500 — — Vac(pk) RISO — 1011 — Ohms VCE(sat) — — 0.4 Volts CISO — 0.2 — pF ton — 5 — µs toff — 5 — Characteristic INPUT LED (TA = 25°C unless otherwise noted) OUTPUT TRANSISTOR (TA = 25°C and IF = 0 unless otherwise noted) Collector–Emitter Dark Current (RBE = 1 MΩ ) (VCE = 200 V, TA = 25°C) (TA = 100°C) H11D1,2 H11D1,2 ICER Collector–Base Breakdown Voltage (IC = 100 µA) H11D1,2 Collector–Emitter Breakdown Voltage (IC = 1 mA, RBE = 1 MΩ) H11D1,2 V(BR)CBO Volts V(BR)CER Emitter–Base Breakdown Voltage (IE = 100 µA) Volts V(BR)EBO Volts COUPLED (TA = 25°C unless otherwise noted) Output Collector Current (VCE = 10 V, IF = 10 mA, RBE = 1 MΩ) Surge Isolation Voltage (Input to Output)(3) Peak ac Voltage, 60 Hz, 1 sec IC (CTR)(2) Isolation Resistance(3) (V = 500 V) Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA, RBE = 1 MΩ) Isolation Capacitance(3) (V = 0, f = 1 MHz) Turn–On Time Turn–Off Time mA (%) H11D1,2 VCC = 10 V, IC = 2 mA, RL = 100 Ω 1. Always design to the specified minimum/maximum electrical limits (where applicable). 2. Current Transfer Ratio (CTR) = IC/IF x 100%. 3. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. TYPICAL CHARACTERISTICS ICER, OUTPUT CURRENT (mA) ICER , OUTPUT CURRENT (mA) 50 20 10 5 2 RBE = 106 Ω VCE = 10 V TA = 25°C 1 0.5 20 IF = 20 mA 10 IF = 10 mA 5 IF = 5 mA 2 0.2 1 0.1 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 Figure 1. Output Current versus LED Input Current 2 RBE = 106 Ω VCE = 10 V –60 –40 –20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 Figure 2. Output Current versus Temperature Motorola Optoelectronics Device Data 2 IF = 50 mA 10 5 PULSE ONLY PULSE OR DC VF, FORWARD VOLTAGE (VOLTS) ICER , OUTPUT CURRENT (mA) 40 1.8 IF = 10 mA 1 0.5 1.6 IF = 5 mA 1.4 RBE = 106 Ω TA = 25°C 0.1 0.05 TA = –55°C 1.2 0.01 0.005 25°C 100°C 1 0.1 0.5 1 5 10 50 100 VCE, COLLECTOR VOLTAGE (VOLTS) 1 300 10 100 IF, LED FORWARD CURRENT (mA) Figure 3. Output Characteristics Figure 4. Forward Characteristics 300 1000 IF = 50 mA RBE = 106 Ω VCE = 10 V 240 ICER , DARK CURRENT (nA) ICBO, COLLECTOR–BASE CURRENT (µ A) 1000 100 180 120 IF = 10 mA IF = 5 mA 60 0 –60 –40 –20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) VCE = 300 V VCE = 100 V RBE = 106 Ω 10 VCE = 50 V 1 100 20 Figure 5. Collector–Base Current versus Temperature 30 40 50 60 90 70 80 TA, AMBIENT TEMPERATURE (°C) 100 Figure 6. Dark Current versus Temperature C, CAPACITANCE (pF) 100 CLED f = 1 MHz CCB 10 1 0.01 0.1 1 V, VOLTAGE (VOLTS) 10 100 Figure 7. Capacitance versus Voltage Motorola Optoelectronics Device Data 3 PACKAGE DIMENSIONS –A– 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4 –B– 1 STYLE 1: PIN 1. 2. 3. 4. 5. 6. 3 F 4 PL C N –T– L ANODE CATHODE NC EMITTER COLLECTOR BASE K SEATING PLANE J 6 PL 0.13 (0.005) G M E 6 PL D 6 PL 0.13 (0.005) M T A B M M T B M A M DIM A B C D E F G J K L M N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0_ 15 _ 0.015 0.100 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 7.62 BSC 0_ 15 _ 0.38 2.54 M CASE 730A–04 ISSUE G –A– 6 4 –B– 1 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 F 4 PL L H C –T– G J K 6 PL E 6 PL 0.13 (0.005) D 6 PL 0.13 (0.005) M T A M B M SEATING PLANE T B M A M CASE 730C–04 ISSUE D 4 M DIM A B C D E F G H J K L S INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.020 0.025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90 *Consult factory for leadform option availability Motorola Optoelectronics Device Data NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. –A– 6 4 –B– 1 3 L N F 4 PL C –T– SEATING PLANE G J K DIM A B C D E F G J K L N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 10.16 10.80 0.38 1.02 D 6 PL E 6 PL 0.13 (0.005) M T A M B M *Consult factory for leadform option availability CASE 730D–05 ISSUE D Motorola Optoelectronics Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ *H11D1/D* Motorola Optoelectronics Device Data H11D1/D