IRF IRFP3703

PD - 93917A
IRFP3703
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l Synchronous Rectification
l Active ORing
VDSS
RDS(on) max
ID
30V
0.0028Ω
210A†
Benefits
l Ultra Low On-Resistance
l Low Gate Impedance to Reduce Switching
Losses
l Fully Avalanche Rated
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
210 †
100 †
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Units
A
1000
230
3.8
1.5
± 20
5.0
-55 to + 175
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.24
–––
0.65
–––
40
°C/W
Typical SMPS Topologies
l
l
Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
Offline High Power AC/DC Convertors using Synchronous Rectification
Notes  through † are on page 8
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1
5/18/01
IRFP3703
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
2.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.028
2.3
2.8
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
2.8
VGS = 10V, ID = 76A „
mΩ
3.9
VGS = 7.0V, ID = 76A „
4.0
V
VDS = VGS, ID = 250µA
20
VDS = 24V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 150°C
200
VGS = 20V
nA
-200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
209
62
42
18
123
53
24
8250
3000
290
10360
3060
2590
Max. Units
Conditions
–––
S
VDS = 24V, ID = 76A
–––
ID = 76A
–––
nC VDS = 24V
–––
VGS = 10V, „
–––
VDD = 15V, VGS = 10V
–––
ID = 76A
ns
–––
RG = 1.8Ω
–––
VGS = 10V „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 24V …
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
1700
76
23
mJ
A
mJ
Diode Characteristics
IS
I SM
VSD
t rr
Q rr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
––– 210†
–––
––– 1000
–––
–––
–––
0.8
80
185
A
1.3
120
275
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 76A, VGS = 0V „
TJ = 25°C, IF = 76A, V DS = 16V
di/dt = 100A/µs „
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IRFP3703
10000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
100
4.5V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 25 ° C
TJ = 175 ° C
100
V DS = 15V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1
10
100
Fig 2. Typical Output Characteristics
10000
10
4.0
20µs PULSE WIDTH
TJ = 175 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
4.5V
10
0.1
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 260A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP3703
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
12000
10000
Ciss
8000
6000
Coss
4000
2000
ID = 76A
VDS = 24V
VGS, Gate-to-Source Voltage (V)
14000
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
100
0
40
80
120
160
200
240
280
320
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
100
TJ = 175 ° C
1000
10
TJ = 25 ° C
100us
100
1ms
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10us
TC = 25 ° C
TJ = 175 ° C
Single Pulse
10
2.4
1
10ms
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP3703
250
RD
VDS
LIMITED BY PACKAGE
VGS
200
D.U.T.
I D , Drain Current (A)
RG
+
-VDD
150
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
100
Fig 10a. Switching Time Test Circuit
50
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC)
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP3703
ID
31A
54A
76A
TOP
5000
D R IV E R
L
VDS
EAS , Single Pulse Avalanche Energy (mJ)
6000
1 5V
BOTTOM
4000
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
A
3000
2000
Fig 12a. Unclamped Inductive Test Circuit
1000
0
25
V (B R )D SS
tp
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
.2µF
.3µF
10 V
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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IRFP3703
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFET
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7
IRFP3703
TO - 247 Package Outline
Dimensions are shown in millimeters (inches)
-D -
3.65 (.143 )
3.55 (.140 )
15.90 (.6 26)
15.30 (.6 02)
-B -
0.25 (.01 0) M
-A5.50 (.21 7)
2 0.30 (.80 0)
1 9.70 (.77 5)
2X
1
2
5.50 (.2 17)
4.50 (.1 77)
3
-C -
1 4.80 (.583 )
1 4.20 (.559 )
2 .40 (.094)
2 .00 (.079)
2X
5.45 (.21 5)
2X
D B M
5.3 0 (.20 9)
4.7 0 (.18 5)
2 .50 (.089)
1 .50 (.059)
4
NOTES:
1 D IM E N S IO N IN G & T O L E R A N C IN G
P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E
T O -2 4 7 -A C .
4 .30 (.170 )
3 .70 (.145 )
0 .80 (.031)
3X 0 .40 (.016)
1 .40 (.056 )
3X 1 .00 (.039 )
0 .25 (.010 ) M
3.4 0 (.1 33)
3.0 0 (.1 18)
C A S
L E A D A S S IG N M E N T S
2.60 (.10 2)
2.20 (.08 7)
1
2
3
4
-
GATE
D R A IN
SOURCE
D R A IN
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
… Coss eff. is a fixed capacitance that gives the same charging time
‚ Starting TJ = 25°C, L = 0.6mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, I AS = 76A.
ƒ ISD ≤ 76A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.5/01
8
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