PD - 93917A IRFP3703 SMPS MOSFET HEXFET® Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS(on) max ID 30V 0.0028Ω 210A Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG Max. 210 100 Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units A 1000 230 3.8 1.5 ± 20 5.0 -55 to + 175 W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units ––– 0.24 ––– 0.65 ––– 40 °C/W Typical SMPS Topologies l l Forward and Bridge Converters with Synchronous Rectification for Telecom and Industrial Applications Offline High Power AC/DC Convertors using Synchronous Rectification Notes through are on page 8 www.irf.com 1 5/18/01 IRFP3703 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 2.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.028 2.3 2.8 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 2.8 VGS = 10V, ID = 76A mΩ 3.9 VGS = 7.0V, ID = 76A 4.0 V VDS = VGS, ID = 250µA 20 VDS = 24V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 200 VGS = 20V nA -200 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 150 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 209 62 42 18 123 53 24 8250 3000 290 10360 3060 2590 Max. Units Conditions ––– S VDS = 24V, ID = 76A ––– ID = 76A ––– nC VDS = 24V ––– VGS = 10V, ––– VDD = 15V, VGS = 10V ––– ID = 76A ns ––– RG = 1.8Ω ––– VGS = 10V ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 24V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– 1700 76 23 mJ A mJ Diode Characteristics IS I SM VSD t rr Q rr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– 210 ––– ––– 1000 ––– ––– ––– 0.8 80 185 A 1.3 120 275 V ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 76A, VGS = 0V TJ = 25°C, IF = 76A, V DS = 16V di/dt = 100A/µs www.irf.com IRFP3703 10000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 100 100 4.5V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 ° C TJ = 175 ° C 100 V DS = 15V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 1 10 100 Fig 2. Typical Output Characteristics 10000 10 4.0 20µs PULSE WIDTH TJ = 175 °C VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 4.5V 10 0.1 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 260A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP3703 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 12000 10000 Ciss 8000 6000 Coss 4000 2000 ID = 76A VDS = 24V VGS, Gate-to-Source Voltage (V) 14000 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 0 1 10 100 0 40 80 120 160 200 240 280 320 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 175 ° C 1000 10 TJ = 25 ° C 100us 100 1ms 1 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us TC = 25 ° C TJ = 175 ° C Single Pulse 10 2.4 1 10ms 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFP3703 250 RD VDS LIMITED BY PACKAGE VGS 200 D.U.T. I D , Drain Current (A) RG + -VDD 150 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 100 Fig 10a. Switching Time Test Circuit 50 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP3703 ID 31A 54A 76A TOP 5000 D R IV E R L VDS EAS , Single Pulse Avalanche Energy (mJ) 6000 1 5V BOTTOM 4000 D .U .T RG + V - DD IA S 20V 0 .0 1 Ω tp A 3000 2000 Fig 12a. Unclamped Inductive Test Circuit 1000 0 25 V (B R )D SS tp 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF 10 V QGS QGD D.U.T. + V - DS VGS VG 3mA IG ID Current Sampling Resistors Charge Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com IRFP3703 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFET www.irf.com 7 IRFP3703 TO - 247 Package Outline Dimensions are shown in millimeters (inches) -D - 3.65 (.143 ) 3.55 (.140 ) 15.90 (.6 26) 15.30 (.6 02) -B - 0.25 (.01 0) M -A5.50 (.21 7) 2 0.30 (.80 0) 1 9.70 (.77 5) 2X 1 2 5.50 (.2 17) 4.50 (.1 77) 3 -C - 1 4.80 (.583 ) 1 4.20 (.559 ) 2 .40 (.094) 2 .00 (.079) 2X 5.45 (.21 5) 2X D B M 5.3 0 (.20 9) 4.7 0 (.18 5) 2 .50 (.089) 1 .50 (.059) 4 NOTES: 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7 -A C . 4 .30 (.170 ) 3 .70 (.145 ) 0 .80 (.031) 3X 0 .40 (.016) 1 .40 (.056 ) 3X 1 .00 (.039 ) 0 .25 (.010 ) M 3.4 0 (.1 33) 3.0 0 (.1 18) C A S L E A D A S S IG N M E N T S 2.60 (.10 2) 2.20 (.08 7) 1 2 3 4 - GATE D R A IN SOURCE D R A IN Notes: Repetitive rating; pulse width limited by max. junction temperature. Coss eff. is a fixed capacitance that gives the same charging time Starting TJ = 25°C, L = 0.6mH as Coss while VDS is rising from 0 to 80% VDSS RG = 25Ω, I AS = 76A. ISD ≤ 76A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.5/01 8 www.irf.com