IRF IRF7456

PD- 93840B
IRF7456
SMPS MOSFET
HEXFET® Power MOSFET
Applications
High Frequency DC-DC Converters
with Synchronous Rectification
l
Benefits
Ultra-Low RDS(on) at 4.5V VGS
l Low Charge and Low Gate Impedance to
Reduce Switching Losses
l Fully Characterized Avalanche Voltage
and Current
l
VDSS
RDS(on) max
ID
20V
0.0065Ω
16A
A
A
D
1
8
S
2
7
D
S
3
6
D
4
5
D
S
G
SO-8
T o p V ie w
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
20
± 12
16
13
130
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient„
Max.
Units
50
°C/W
Typical SMPS Topologies
l
Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes  through „ are on page 8
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1
4/20/00
IRF7456
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, I D = 250µA
0.024 ––– V/°C Reference to 25°C, ID = 1mA
0.00470.0065
VGS = 10V, ID = 16A ƒ
Ω
0.00570.0075
VGS = 4.5V, I D = 13A ƒ
0.011 0.020
VGS = 2.8V, ID = 3.5A ƒ
––– 2.0
V
VDS = VGS, ID = 250µA
––– 20
VDS = 16V, VGS = 0V
µA
––– 100
VDS = 16V, VGS = 0V, TJ = 125°C
––– 200
VGS = 12V
nA
––– -200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
41
9.7
18
20
25
50
52
3640
1570
330
Max. Units
Conditions
–––
S
VDS = 10V, ID = 16A
62
ID = 16A
15
nC
VDS = 16V
27
VGS = 5.0V, ƒ
–––
VDD = 10V
–––
ID = 1.0A
ns
–––
RG = 6.0Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
VDS = 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
250
16
0.25
mJ
A
mJ
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.5
–––
–––
130
–––
–––
–––
–––
48
74
1.2
72
110
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.5A, VGS = 0V
TJ = 25°C, IF = 2.5A
di/dt = 100A/µs ƒ
D
S
ƒ
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IRF7456
1000
1000
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
100
100
10
1
10
2.0V
20µs PULSE WIDTH
TJ = 25 °C
2.0V
0.1
0.1
1
10
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
T J = 150°C
10.0
T J = 25°C
1.0
VDS = 15V
20µs PULSE WIDTH
2.2
2.4
2.6
2.8
3.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100.0
2.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
ID , Drain-to-Source Current (Α )
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
3.2
ID = 16A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7456
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
4000
Ciss
3000
Coss
2000
1000
ID = 16A
VDS = 16V
10
8
6
4
2
Crss
0
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
20
VDS , Drain-to-Source Voltage (V)
40
60
80
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
5000
12
VGS , Gate-to-Source Voltage (V)
6000
TJ = 25 ° C
1
100us
1ms
10
10ms
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10us
100
10
2.2
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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Fig 6. On-Resistance Vs. Drain Current
IRF7456
20
VDS
I D , Drain Current (A)
VGS
15
RD
D.U.T.
RG
+
-VDD
10V
10
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
TC , Case Temperature
125
150
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
0.1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7456
R DS(on) , Drain-to -Source On Resistance ( Ω )
R DS (on) , Drain-to-Source On Resistance ( Ω)
0.0062
VGS = 4.5V
0.0058
0.0054
0.0050
VGS = 10V
0.0046
0
20
40
60
80
0.012
0.010
0.008
ID = 16A
0.006
0.004
0
100
4
8
12
16
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
600
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V (B R )D S S
tp
L
VD S
D .U .T
RG
IA S
20V
IAS
tp
DRIVE R
+
V
- DD
0.01 Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
500
BOTTOM
ID
7.2A
10A
16A
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7456
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0 .2 5 (.0 1 0 )
4
M
A M
θ
e1
K x 4 5°
-C -
0 .1 0 (.0 0 4 )
B 8X
0 .2 5 (.0 1 0 )
A1
L
8X
6
C
8X
M C A S B S
NOTES:
1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
2 . C O N T R O L L IN G D IM E N S IO N : IN C H .
3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ).
6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
M IN
M AX
.05 32
.06 88
1.3 5
1.75
.00 40
.00 98
0.1 0
0.25
B
.01 4
.01 8
0.3 6
0.46
C
.00 75
.009 8
0.19
0.25
D
.18 9
.196
4.80
4.98
E
.15 0
.15 7
3.8 1
3.99
e1
A
M ILLIM E T E R S
M AX
A1
e
θ
IN C H E S
M IN
.05 0 B A S IC
1.27 B A S IC
.02 5 B A S IC
0 .635 B A S IC
H
.22 84
.244 0
K
.01 1
.01 9
0.2 8
5.8 0
0.48
6.20
L
0.16
.05 0
0.4 1
1.27
θ
0°
8°
0°
8°
R E C O M M E N D E D F O O T P R IN T
0 .7 2 (.0 2 8 )
8X
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 )
8X
1 .2 7 ( .0 5 0 )
3X
SO-8 Part Marking
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7
IRF7456
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S :
1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R .
2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ).
3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00
(12.992)
M AX .
14.4 0 ( .566 )
12.4 0 ( .488 )
N O T ES :
1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER .
2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 2.0mH
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board, t<10 sec
RG = 25Ω, IAS = 16A.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8
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