IRF IRFL4315

PD - 94445
IRFL4315
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
RDS(on) max
ID
185mΩ
Ω@VGS = 10V 2.6A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
2.6
2.1
21
2.8
0.02
± 30
6.3
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJA
Parameter
Junction-to-Ambient (PCB Mount, steady state)„
Typ.
Max.
Units
–––
45
°C/W
Notes  through † are on page 8
www.irf.com
1
06/14/02
IRFL4315
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.19
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
–––
V/°C Reference to 25°C, ID = 1mA ƒ
185
mΩ VGS = 10V, ID = 1.6A ƒ
5.0
V
VDS = VGS, ID = 250µA
25
VDS = 150V, VGS = 0V
µA
250
VDS = 120V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
12
2.1
6.8
8.4
21
20
19
420
100
25
720
48
98
Max. Units
Conditions
–––
S
VDS = 50V, ID = 1.6A
19
ID = 1.6A
3.1
nC
VDS = 120V
10
VGS = 10V
–––
VDD = 75V
–––
ID = 1.6A
ns
–––
RG = 15Ω
–––
VGS = 10V ƒ
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 120V …
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
38
3.1
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.6
A
–––
–––
21
–––
–––
–––
–––
61
160
1.5
91
240
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.1A, VGS = 0V
TJ = 25°C, IF = 1.6A
di/dt = 100A/µs ƒ
D
S
ƒ
www.irf.com
IRFL4315
100
100
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
10
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
TOP
1
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
5.5V
0.1
10
5.5V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
100.00
2.5
I D = 2.6A
T J = 150°C
10.00
T J = 25°C
VDS = 50V
20µs PULSE WIDTH
1.00
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
10.0
(Normalized)
2.0
R DS(on) , Drain-to-Source On Resistance
ID , Drain-to-Source Current (Α )
10
VDS, Drain-to-Source Voltage (V)
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
TJ , Junction Temperature
80
100
120
140
160
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFL4315
10000
12
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
1000
C iss
100
C oss
C rss
VDS= 120V
VDS= 75V
10
VDS= 30V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
1
10
100
0
1000
2
VDS , Drain-to-Source Voltage (V)
4
6
8
10
12
14
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
TJ = 150 ° C
I SD, Reverse Drain Current (A)
C, Capacitance(pF)
Coss = Cds + Cgd
ID= 1.6A
10
T J= 25 ° C
1
V GS = 0 V
0.1
0.0
0.5
1.0
1.5
2.0
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.5
10
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRFL4315
3.0
RD
VDS
2.5
VGS
2.0
ID , Drain Current (A)
D.U.T.
RG
+
-VDD
10V
1.5
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
VDS
90%
0.0
25
50
75
100
125
150
°
TA , Ambient Temperature
(°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
10
0.20
Thermal Response
0.10
0.05
P DM
1
0.02
t1
0.01
t2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
2. Peak T
0.1
0.00001
0.0001
0.001
0.01
0.1
J
1
t1 / t 2
= P DM x Z thJA
+TA
10
100
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
R DS(on) , Drain-to -Source On Resistance (m Ω )
R DS (on) , Drain-to-Source On Resistance (m Ω)
IRFL4315
240
220
200
VGS = 10V
180
160
140
120
100
0
5
10
15
20
4000
3500
3000
2500
2000
1500
1000
ID = 2.6A
500
0
4.5
25
6.0
7.5
9.0
10.5
12.0
13.5
15.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
50KΩ
12V
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
VG
100
VGS
3mA
Charge
IG
ID
80
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V (B R )D S S
tp
L
VD S
D .U .T
RG
IA S
20V
IAS
tp
DRIVE R
+
V
- DD
0.01 Ω
A
EAS , Single Pulse Avalanche Energy (mJ)
Current Sampling Resistors
TOP
ID
1.4A
BOTTOM
2.5A
3.1A
60
40
20
0
25
50
75
100
Starting Tj, Junction Temperature
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
125
150
( ° C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
IRFL4315
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
E X A M P L E : T H IS IS A N IR FL 0 14
P A R T NU M B E R
IN TE RN A TIO NA L
RE CT IF IE R
LO G O
F L0 14
31 4
TOP
www.irf.com
W A FER
LO T CO D E
XXXXXX
D A TE CO D E (Y W W )
Y = LA S T D IG IT O F TH E Y E A R
W W = W E EK
B O TT O M
7
IRFL4315
Tape & Reel Information
SOT-223 Outline
4 .1 0 (.1 61)
3 .9 0 (.1 54)
2 .0 5 (.0 80 )
1 .9 5 (.0 77 )
TR
0 .35 (.0 1 3)
0 .25 (.0 1 0)
1 .85 (.07 2 )
1 .65 (.06 5 )
7.5 5 (.2 9 7)
7.4 5 (.2 9 4)
1 6 .3 0 (.6 4 1)
1 5 .7 0 (.6 1 9)
7 .6 0 (.2 99 )
7 .4 0 (.2 92 )
1 .6 0 (.0 62)
1 .5 0 (.0 59)
TY P .
F E E D D IR EC T IO N
12 .10 (.47 5)
11 .90 (.46 9)
2.30 (.0 90 )
2.10 (.0 83 )
7 .1 0 (.2 79 )
6 .9 0 (.2 72 )
N OTES :
1 . C O N T R O L L ING D IM E N S IO N : M IL LIM E TE R .
2 . O U T LIN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
3 . E A C H O 3 30.0 0 (13 .00 ) R E E L C O N T A IN S 2,5 00 D E V IC E S .
1 3 .20 (.51 9 )
1 2 .80 (.50 4 )
1 5.40 (.6 07)
1 1.90 (.4 69)
4
330.00
(13.000)
M AX.
50.0 0 (1 .9 6 9)
M IN .
N O TE S :
1 . O U T L IN E C O M F O R M S T O E IA -4 18 -1 .
2 . C O N T R O LL IN G D IM EN S IO N : M IL L IM E T E R ..
3 . D IM EN S IO N M E A S U R E D @ H U B .
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R ED G E .
18 .40 ( .72 4)
MAX.
1 4.4 0 (.5 6 6)
1 2.4 0 (.4 8 8)
4
3
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 7.8mH
RG = 25Ω, IAS = 3.1A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† ISD ≤ 1.6A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/02
8
www.irf.com