IRF IRFB16N50K

PD - 95855
IRFB16N50K
SMPS MOSFET
Applications
HEXFET® Power MOSFET
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency
Circuits
l
l
l
l
VDSS
RDS(on) typ.
285m:
500V
Benefits
Low Gate Charge Qg results in Simple Drive
Requirement
Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Voltage and Current
Low RDS(on)
l
l
l
l
ID
17A
S
D
G
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
Max.
Units
Continuous Drain Current, VGS @ 10V
17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
IDM
11
PD @TC = 25°C
Power Dissipation
280
W
VGS
Linear Derating Factor
Gate-to-Source Voltage
2.3
± 30
W/°C
V
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
8.0
-55 to + 150
V/ns
TSTG
Storage Temperature Range
c
A
68
e
°C
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
300 (1.6mm from case )
y
y
10 lbf in (1.1N m)
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
c
d
c
Typ.
Max.
Units
–––
310
mJ
–––
17
A
–––
28
mJ
Thermal Resistance
Typ.
Max.
Units
RθJC
Junction-to-Case
Parameter
–––
0.44
°C/W
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
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03/11/04
IRFB16N50K
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
–––
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.58
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
285
350
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
50
µA
VDS = 500V, VGS = 0V
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
IGSS
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 10A
f
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
–––
–––
S
Conditions
VDS = 50V, ID = 10A
gfs
Qg
Forward Transconductance
5.7
Total Gate Charge
–––
60
89
Qgs
Gate-to-Source Charge
–––
18
27
Qgd
Gate-to-Drain ("Miller") Charge
–––
28
43
VGS = 10V
td(on)
Turn-On Delay Time
–––
20
–––
VDD = 250V
tr
Rise Time
–––
77
–––
td(off)
Turn-Off Delay Time
–––
38
–––
RG = 8.8Ω
tf
Fall Time
–––
30
–––
VGS = 10V
Ciss
Input Capacitance
–––
2210
–––
VGS = 0V
240
–––
VDS = 25V
ID = 17A
nC
ns
VDS = 400V
f
ID = 17A
f
Coss
Output Capacitance
–––
Crss
Reverse Transfer Capacitance
–––
26
–––
Coss
Output Capacitance
–––
2620
–––
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
63
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
120
–––
VGS = 0V, VDS = 0V to 400V
pF
e
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units Conditions
–––
–––
17
A
–––
–––
68
A
(Body Diode)
ISM
D
showing the
Pulsed Source Current
(Body Diode)
MOSFET symbol
ch
G
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS = 17A, VGS = 0V
trr
Reverse Recovery Time
–––
490
730
ns
TJ = 25°C, IF = 17A
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 2.2mH, RG = 25Ω,
IAS = 17A.
2
S
f
f
––– 5710 8560
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ƒ ISD ≤ 17A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
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IRFB16N50K
100
100
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
10
BOTTOM
TOP
1
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
5.5V
0.1
1
10
BOTTOM
5.5V
1
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
0.1
10
0.1
0.1
100
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
T J = 150°C
10
T J = 25°C
VDS = 100V
60µs PULSE WIDTH
1.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α)
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
2.5
ID = 17A
VGS = 10V
2.0
1.5
1.0
0.5
0.0
4
5
6
7
8
9 10 11 12 13 14 15 16
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRFB16N50K
100000
ID= 17A
VGS, Gate-to-Source Voltage (V)
10000
C, Capacitance(pF)
12.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + C gd, C ds SHORTED
Crss = C gd
Coss = C ds + C gd
Ciss
1000
Coss
100
Crss
10
8.0
6.0
4.0
2.0
0.0
1
1
10
100
1000
0
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
20
30
40
50
60
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100.00
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10.00
T J = 25°C
1.00
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.10
10msec
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS= 400V
VDS= 250V
VDS= 100V
10.0
1.6
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFB16N50K
20
V DS
ID, Drain Current (A)
VGS
RD
D.U.T.
15
RG
10
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
- VDD
10V
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
T C , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFB16N50K
EAS , Single Pulse Avalanche Energy (mJ)
600
ID
7.6A
11A
BOTTOM 17A
TOP
500
15V
400
DRIVER
L
VDS
300
D.U.T
RG
200
+
- VDD
IAS
20V
tp
A
0.01Ω
100
Fig 13a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
V(BR)DSS
Fig 12. Maximum Avalanche Energy
vs. Drain Current
tp
I AS
Fig 13b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
VGS
.2µF
.3µF
D.U.T.
QGS
+
V
- DS
QGD
VG
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 14a. Gate Charge Test Circuit
6
Charge
Fig 14b. Basic Gate Charge Waveform
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IRFB16N50K
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 15. For N-Channel HEXFET® Power MOSFETs
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IRFB16N50K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
1
2
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
3
1.40 (.055)
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
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TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/04
8
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