IRF IRF5802

PD- 94086
IRF5802
SMPS MOSFET
HEXFET® Power MOSFET
VDSS
Applications
l High frequency DC-DC converters
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
150V
RDS(on) max
1.2Ω@VGS = 10V
D
1
6
D
D
2
5
D
G
3
4
S
ID
0.9A
TSOP-6
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
0.9
0.7
7.0
2.0
0.02
± 30
7.1
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient„
Max.
Units
62.5
°C/W
Notes  through † are on page 8
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1/23/01
IRF5802
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.19
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA ƒ
1.2
Ω
VGS = 10V, ID = 0.54A ƒ
5.5
V
VDS = VGS, ID = 250µA
25
VDS = 150V, VGS = 0V
µA
250
VDS = 120V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
Conditions
0.55 ––– –––
S
VDS = 50V, ID = 0.54A
–––
4.5 6.8
ID = 0.54A
–––
1.0 1.5
nC
VDS = 120V
–––
2.4 3.6
VGS = 10V,
–––
6.0 –––
VDD = 75V
–––
1.6 –––
ID = 0.54A
ns
–––
7.5 –––
RG = 6.0Ω
–––
9.2 –––
VGS = 10V ƒ
–––
88 –––
VGS = 0V
–––
26 –––
VDS = 25V
–––
7.7 –––
pF
ƒ = 1.0MHz
––– 110 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
14 –––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
–––
3.0 –––
VGS = 0V, VDS = 0V to 120V …
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
9.5
0.9
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
1.8
–––
–––
18
–––
–––
–––
–––
46
55
1.3
69
83
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 0.54A, VGS = 0V
TJ = 25°C, IF = 0.54A
di/dt = 100A/µs ƒ
D
S
ƒ
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IRF5802
100
10
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
1
6.0V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
1
6.0V
100
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
1
V DS = 50V
20µs PULSE WIDTH
10
12
14
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
10
8
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
VDS , Drain-to-Source Voltage (V)
6
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
TOP
ID = 0.9A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5802
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
Ciss
100
Coss
Crss
10
VGS , Gate-to-Source Voltage (V)
20
1000
1
ID = 0.54A
VDS = 120V
VDS = 75V
VDS = 30V
16
12
8
4
0
1
10
100
0
1000
1
2
3
4
5
6
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
0.6
0.8
1.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1
100µsec
1msec
0.1
T A = 25°C
10msec
T J = 150°C
Single Pulse
V GS = 0 V
VSD ,Source-to-Drain Voltage (V)
10
0.01
1.2
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5802
1.0
RD
VDS
VGS
I D , Drain Current (A)
0.8
D.U.T.
RG
+
-VDD
0.6
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.4
Fig 10a. Switching Time Test Circuit
0.2
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.1
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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R DS ( on) , Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to -Source On Resistance ( Ω )
IRF5802
2.80
2.40
2.00
ID = 0.54A
1.60
1.20
0.80
6.0
7.0
8.0
9.0
6.00
4.00
VGS = 10V
2.00
0.00
10.0 11.0 12.0 13.0 14.0 15.0
0
2
VGS, Gate -to -Source Voltage (V)
4
6
ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
25
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V (B R )D S S
tp
L
VD S
D .U .T
RG
IA S
20V
tp
IAS
DRIVE R
+
V
- DD
20
15
10
5
0
25
A
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
0.01 Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
ID
0.40A
0.70A
BOTTOM 0.90A
TOP
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF5802
TSOP-6 Package Outline
TSOP-6 Part Marking Information
EXAMPLE: T HIS IS AN SI3443DV
PART NUMBER
3A YW
T OP
WAFER LOT
NUMBER CODE
XXXX
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
DATE
CODE
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
BOT TOM
PART NUMBER CODE REFERENCE:
3A = SI3443DV
3B = IRF5800
3C = IRF5850
3D = IRF5851
3E = IRF5852
3I = IRF5805
3J = IRF5806
DAT E CODE EXAMPLES :
YWW = 9603 = 6C
YWW = 9632 = FF
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WW = (27-52) IF PRECEDED BY A LET T ER
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
X
Y
7
IRF5802
TSOP-6 Tape & Reel Information
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
„ When mounted on 1 inch square copper board
… Coss eff. is a fixed capacitance that gives the same charging time
‚ Starting TJ = 25°C, L = 23mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 0.54A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
† ISD ≤ 0.54A, di/dt ≤ 89A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/00
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