IRF IRLMS5703

PD - 91413E
IRLMS5703
HEXFET® Power MOSFET
l
l
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Generation V Technology
Micro6 Package Style
Ultra Low Rds(on)
P-Channel MOSFET
D
D
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
1
6
2
5
3
4
A
D
VDSS = -30V
D
S
RDS(on) = 0.20Ω
T op V iew
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
M icro 6
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @- 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Units
-2.3
-1.9
-13
1.7
13
± 20
5.0
-55 to + 150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient „
Min.
Typ.
–––
–––
Max
Units
75
°C/W
4/7/04
IRLMS5703
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
1.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.01
–––
–––
–––
–––
–––
–––
–––
–––
7.2
1.4
2.3
10
12
20
8.4
170
89
44
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.20
VGS = -10V, ID = -1.6A „
Ω
0.40
VGS = -4.5V, ID = -0.80A „
–––
V
VDS = VGS , ID = -250µA
–––
S
VDS = -10V, ID = -0.80A
-1.0
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, TJ = 125°C
100
VGS = -20V
nA
-100
VGS = 20V
11
ID = -1.6A
2.1
nC
VDS = -24V
3.4
VGS = -10V, See Fig. 6 and 9 „
–––
VDD = -15V
–––
ID = -1.6A
ns
–––
RG = 6.2Ω
–––
RD = 9.2Ω, See Fig. 10 „
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.7
–––
–––
-13
–––
–––
–––
–––
29
27
-1.2
44
41
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.6A, VGS = 0V ƒ
TJ = 25°C, I F = -1.6A
di/dt = -100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ ISD ≤ -1.6A, di/dt ≤ -140A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 150°C
„ Surface mounted on FR-4 board, t ≤ 5sec.
D
S
IRLMS5703
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
TOP
-I D , D ra in -to -S o u rce C u rre n t (A )
-I D , D ra in -to -S o u rc e C u rre n t (A )
TOP
10
1
-3 .0V
20 µs P U LSE W IDTH
TJ = 25 °C
A
0.1
0.1
1
10
1
-3.0 V
20 µs P U LSE W IDTH
TJ = 15 0°C
A
0.1
10
0.1
1
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
-I D , D rain -to- S our ce C urr ent ( A )
100
10
TJ = 2 5 °C
TJ = 1 5 0 °C
1
V DS = -1 0 V
2 0 µ s P U L S E W ID T H
0.1
3.0
4.0
5.0
6.0
7.0
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
-VD S , D rain-to-S ource V oltage (V )
8.0
A
I D = -1.6A
1.5
1.0
0.5
VG S = -10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLMS5703
V GS
C is s
C rs s
C os s
C , C a p a c ita n c e (p F )
300
=
=
=
=
20
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
-V G S , G a te -to -S o u rce V o lta g e (V )
350
250
C is s
200
C o ss
150
100
C rss
50
0
10
V DS = - 24V
V DS = - 15V
16
12
8
4
FOR TE ST C IR C U IT
SE E FIG U R E 9
0
A
1
I D = -1 .6A
100
0
-VD S , Drain-to-Source V oltage (V)
4
6
8
10
A
12
Q G , Total G ate C harge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
-I D , D ra in C u rre n t (A )
-IS D , R e ve rse D ra in C u rre n t (A )
2
10
TJ = 1 50° C
TJ = 25 °C
1
10
100µ s
1m s
1
10m s
VG S = 0 V
0.1
0.4
0.6
0.8
1.0
1.2
-VS D , S ource-to-Drain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.4
T A = 25 °C
T J = 15 0°C
S ing le Pulse
0.1
1
A
10
-V D S , D rain-to-S ource Voltage (V )
Fig 8. Maximum Safe Operating Area
100
IRLMS5703
RD
VDS
QG
VGS
-10V
QGS
D.U.T.
RG
QGD
+
VG
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
td(on)
.2µF
12V
tr
t d(off)
tf
VGS
50KΩ
10%
.3µF
D.U.T.
+VDS
VGS
90%
-3mA
IG
VDS
ID
Current Sampling Resistors
Fig 10b. Switching Time Waveforms
Fig 9b. Gate Charge Test Circuit
100
Thermal Response
(Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRLMS5703
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
+
**

• dv/dt controlled by RG
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS*
*
„
+
-
*
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
Period
P.W.
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
[ISD ]
IRLMS5703
Micro6 Package Outline
Dimensions are shown in millimeters (inches)
3.00 (.118 )
2.80 (.111 )
1.75 (.068 )
1.50 (.060 )
-A-
6
5
LEAD ASSIGNMENTS
2
D
6
5
4
1
2
3
D
D
G
2X 0.95 (.0375 )
S
6X (1.06 (.042 )
3
0.95 ( .0375 )
6X
2X
D
4
3.00 (.118 )
2.60 (.103 )
1
RECOMMENDED FOOTPRINT
-B-
2.20 (.087 )
0.50 (.019 )
0.35 (.014 )
6X 0.65 (.025 )
0.15 (.006 ) M C A S B S
O
O
0 -10
1.30 (.051 )
0.90 (.036 )
6X
1.45 (.057 )
0.90 (.036 )
-C0.15 (.006 )
MAX.
0.10 (.004 )
6 SURFACES
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
0.60 (.023 )
0.10 (.004 )
0.20 (.007 )
0.09 (.004 )
IRLMS5703
Micro6 Part Marking Information
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IRLMS5703
Micro6 Tape & Reel Information
Dimensions are shown in millimeters (inches)
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04