IRF IRF7416

PD - 9.1356D
IRF7416
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
l
l
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = -30V
RDS(on) = 0.02Ω
T op V ie w
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
dv/dt
TJ,TSTG
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ - 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Max.
Units
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
A
W
mW/°C
V
mJ
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient…
Typ.
Max.
Units
–––
50
°C/W
8/25/97
IRF7416
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
5.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.024 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.020
VGS = -10V, ID = -5.6A „
Ω
––– 0.035
VGS = -4.5V, ID = -2.8A „
––– –––
V
VDS = VGS , ID = -250µA
––– –––
S
VDS = -10V, ID = -2.8A
––– -1.0
VDS = -24V, VGS = 0V
µA
––– -25
VDS = -24V, VGS = 0V, TJ = 125°C
––– -100
VGS = -20V
nA
––– 100
VGS = 20V
61
92
ID = -5.6A
8.0
12
nC
VDS = -24V
22
32
VGS = -10V, See Fig. 6 and 9 „
18 –––
VDD = -15V
49 –––
ID = -5.6A
ns
59 –––
RG = 6.2Ω
60 –––
RD = 2.7Ω, See Fig. 10 „
1700 –––
VGS = 0V
890 –––
pF
VDS = -25V
410 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-3.1
–––
–––
-45
–––
–––
–––
–––
56
99
-1.0
85
150
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = -5.6A, VGS = 0V ƒ
TJ = 25°C, IF = -5.6A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 25mH
RG = 25Ω, IAS = -5.6A. (See Figure 12)
ƒ ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Surface mounted on FR-4 board, t ≤ 10sec.
D
G
S
IRF7416
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
TOP
-I D , D ra in -to -S o u rc e C u rre n t (A )
-I D , D ra in -to -S o u rc e C u rre n t (A )
TOP
10
-3.0V
20 µs P U LSE W IDTH
TJ = 25 °C
A
1
0.1
1
10
-3 .0V
20 µs P U LSE W IDTH
TJ = 15 0°C
A
1
0.1
10
1
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
-I D , D rain -to- S our ce C urr ent ( A )
100
TJ = 2 5 °C
TJ = 1 5 0° C
10
V DS = -1 0 V
2 0 µ s P U L S E W ID T H
1
3.0
3.5
4.0
4.5
5.0
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
-VD S , D rain-to-S ource V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
5.5
A
I D = -5.6A
1.5
1.0
0.5
VG S = -10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7416
V GS
C is s
C rss
C oss
20
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH OR TE D
= C gd
= C d s + C gd
-V G S , G a te -to -S o u rce V o lta g e (V )
C , C a p a c ita n c e (p F )
4000
3000
C i ss
2000
C os s
1000
C rss
0
10
V DS = -24 V
V DS = -15 V
16
12
8
4
FO R TEST C IR C U IT
SEE F IGU R E 9
0
A
1
I D = -5.6 A
100
0
20
V D S , D rain-to-S ource Voltage (V )
60
80
A
100
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-II D , Drain Current (A)
-I S D , R e ve rse D ra in C u rre n t (A )
40
TJ = 1 50°C
10
TJ = 25 °C
VG S = 0 V
1
0.4
0.6
0.8
1.0
-V S D , S ource-to-Drain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
10
1ms
10ms
TA = 25 °C
TJ = 150 ° C
Single Pulse
A
1.2
1
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRF7416
RD
VDS
QG
-10V
QGS
VGS
D.U.T.
RG
QGD
+
VG
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
td(on)
50KΩ
12V
tr
t d(off)
tf
VGS
.2µF
.3µF
10%
+VDS
D.U.T.
VGS
90%
-3mA
VDS
IG
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7416
1000
ID
-2.5A
-4.5A
BOTTOM -5.6A
D .U .T
RG
IA S
- 20V
tp
VD D
A
D R IV E R
0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
TOP
800
600
400
200
0
25
50
75
100
125
Starting T J, Junction Temperature ( C)o
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
150
IRF7416
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
**

• dv/dt controlled by RG
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS*
+
-
VDD*
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
Period
P.W.
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[ VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
[ ISD]
IRF7416
Package Outline
SO8 Outline
INCHES
DIM
D
-B-
5
8
E
-A-
1
7
2
6
3
e
6X
5
H
0.25 (.010)
4
M
A M
e1
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
e1
θ
A
-C-
0.10 (.004)
B 8X
0.25 (.010)
MAX
e
K x 45°
A1
L
8X
6
C
8X
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
.2284
.2440
5.80
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
8°
0°
8°
0°
0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6
6.20
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
5
MAX
H
θ
M C A S B S
MILLIMETERS
MIN
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6.46 ( .255 )
1.78 (.070)
8X
1.27 ( .050 )
3X
Part Marking Information
SO8
E X A M P LE : TH IS IS A N IR F 7 101
3 12
IN T E R N A TI ON A L
R E C T IF IE R
LO G O
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
XX X X
F 7 101
T OP
PART NUMBER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
B O T TO M
IRF7416
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E ED D IR E C T IO N
N O TE S:
1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R.
2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ).
3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 .
33 0. 00
(12 .99 2)
M A X.
1 4. 40 ( .5 66 )
1 2. 40 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
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Data and specifications subject to change without notice.
8/97