PD - 93957A
IRFZ44V
HEXFET® Power MOSFET
Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
Description
l
D
VDSS = 60V
RDS(on) = 16.5mW
G
ID = 55A
S
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
55
39
220
115
0.77
± 20
115
55
11
4.5
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RqJC
RqCS
RqJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.3
–––
62
°C/W
1
3/25/01
IRFZ44V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
60
–––
–––
2.0
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.062
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
97
40
57
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1812
393
103
V(BR)DSS
DV(BR)DSS/DTJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
16.5 mW
VGS = 10V, ID = 31A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 31A
25
VDS = 60V, VGS = 0V
µA
250
VDS = 48V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
67
ID = 51A
18
nC VDS = 48V
25
VGS = 10V, See Fig. 6 and 13
–––
VDD = 30V
–––
ID = 51A
ns
–––
RG = 9.1W
–––
RD = 0.6W , See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
55
––– –––
showing the
A
G
integral reverse
––– ––– 220
S
p-n junction diode.
––– ––– 2.5
V
TJ = 25°C, IS = 51A, VGS = 0V
––– 70 105
ns
TJ = 25°C, IF = 51A
––– 146 219
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 89µH
ISD £ 51A, di/dt £ 227A/µs, VDD £ V(BR)DSS,
TJ £ 175°C
Pulse width £ 300µs; duty cycle £ 2%.
RG = 25W , IAS = 51A. (See Figure 12)
2
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IRFZ44V
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
100
10
4.5V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
TJ = 175° C
10
V DS = 25V
20µs PULSE WIDTH
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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12
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
6
10
100
Fig 2. Typical Output Characteristics
1000
5
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
20µs PULSE WIDTH
TJ = 175°C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
4.5V
10
3.0
ID = 55A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFZ44V
20
4000
Crss = Cgd
Coss = Cds + Cgd
3000
C, Capacitance(pF)
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Cis = Cgs + Cgd, Cds SHORTED
2000
Ciss
1000
Coss
ID = 51A
V DS= 48V
V DS= 30V
V DS= 12V
16
12
8
4
Crss
0
0
1
10
0
100
1000
80
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 175° C
ID , Drain Current (A)
100
10us
100
TJ = 25 ° C
10
100us
10
1ms
1
0.1
0.2
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
V GS = 0 V
0.7
1.2
1.7
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
2.2
TC = 25 ° C
TJ = 175 °C
Single Pulse
1
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFZ44V
RD
VDS
60
VGS
ID , Drain Current (A)
50
D.U.T.
RG
+
V
DD
-
40
10V
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
90%
10
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
D R IV E R
D .U .T
RG
+
- VD D
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRFZ44V
250
ID
21A
36A
BOTTOM 51A
TOP
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFZ44V
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
+
-
-
+
RG
·
·
·
·
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFZ44V
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
2.87 (.11 3)
2.62 (.10 3)
3.7 8 (.149 )
3.5 4 (.139 )
-A -
-B4.69 (.185 )
4.20 (.165 )
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.60 0)
14.84 (.58 4)
1.15 (.04 5)
M IN
1
2
14.09 (.55 5)
13.47 (.53 0)
4.06 (.160)
3.55 (.140)
3X
3X
LE A D A S S IG N M E N T S
1 - G ATE
2 - D R A IN
3 - SOURCE
4 - D R A IN
3
1 .40 (.0 55)
1 .15 (.0 45)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NO TES:
1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982.
2 C O N TR O LLIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B .
4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F 1 0 1 0
W ITH A S S E M B L Y
LOT CO DE 9B1M
A
IN TE R N A T IO N A L
R E C T IF IE R
LO GO
ASSEMBLY
LOT CODE
PART NUMBER
IR F 1 0 1 0
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
8
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