IRF IRFZ46N

PD-91277
IRFZ46N
HEXFET® Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 16.5mΩ
G
ID = 53A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
53
37
180
107
0.71
± 20
28
11
5.0
-55 to + 175
Units
A
W
W/°C
V
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.4
–––
62
°C/W
1
01/24/01
IRFZ46N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.057
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
76
52
57
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy ‚
–––
–––
–––
–––
1696
407
110
583…
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
16.5 mΩ VGS = 10V, ID = 28A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 28A„
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
72
ID = 28A
11
nC
VDS = 44V
26
VGS = 10V, See Fig. 6 and 13
–––
VDD = 28V
–––
ID = 28A
ns
–––
RG = 12Ω
–––
VGS = 10V, See Fig. 10 „
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
152† mJ IAS = 28A, L = 389µH
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 53
showing the
A
G
integral reverse
––– ––– 180
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, I S = 28A, VGS = 0V „
–––
67 101
ns
TJ = 25°C, IF = 28A
––– 208 312
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 389µH
RG = 25Ω, IAS = 28A. (See Figure 12)
ƒ ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C.
2
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IRFZ46N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
4.5V
10
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
TJ = 25 ° C
100
TJ = 175 ° C
10
V DS = 25V
20µs PULSE WIDTH
1
4
5
6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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11
ID = 53A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFZ46N
VGS =
Ciss =
Crss =
Coss =
C, Capacitance (pF)
2500
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
C iss
2000
1500
Coss
1000
Crss
500
20
VGS , Gate-to-Source Voltage (V)
3000
10
12
8
4
100
0
10
20
30
40
50
60
70
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
FOR TEST CIRCUIT
SEE FIGURE 13
0
VDS , Drain-to-Source Voltage (V)
100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
TJ = 175 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.7
1.2
1.7
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
V DS = 44V
V DS = 27V
V DS = 11V
16
0
1
ID = 28A
100µsec
10
1msec
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
2.2
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFZ46N
60
RD
VDS
ID , Drain Current (A)
50
VGS
D.U.T.
RG
+
-VDD
40
VGS
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
1 5V
L
VD S
D R IV E R
D .U .T
RG
+
- VD D
IA S
20V
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRFZ46N
350
TOP
300
BOTTOM
250
ID
11A
20A
28A
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFZ46N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRFZ46N
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10 .54 (.4 15)
10 .29 (.4 05)
-B -
3 .7 8 (.149 )
3 .5 4 (.139 )
4.69 ( .18 5 )
4.20 ( .16 5 )
-A -
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
TO-220AB Part Marking Information
E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M
A
IN TE R N A TIO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CO DE
PART NU MBER
IR F 10 1 0
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
Data and specifications subject to change without notice.
This product has been designed and qualified for the automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
8
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