HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. Features • 35A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC STYLE TO-247 The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. E C G Formerly Developmental Type TA49302. Ordering Information PART NUMBER HGTG10N120BND PACKAGE TO-247 BRAND 10N120BND NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2001 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTG10N120BND Rev. B HGTG10N120BND Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC HGTG10N120BND 1200 UNITS V 35 17 80 ±20 ±30 55A at 1200V 298 2.38 -55 to 150 260 8 15 A A A V V W W/oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 10Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES TEST CONDITIONS IC = 250µA, VGE = 0V VCE = 1200V IC = 10A, VGE = 15V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC IC = 90µA, VCE = VGE VGE = ±20V MIN TYP MAX UNITS 1200 - - V - - 250 µA - 170 - µA - - 2.5 mA - 2.45 2.7 V - 3.7 4.2 V 6.0 6.8 - V - - ±250 nA 55 - - A Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH, VCE(PK) = 1200V Gate to Emitter Plateau Voltage VGEP IC = 10A, VCE = 600V - 10.4 - V IC = 10A, VCE = 600V VGE = 15V - 100 120 nC VGE = 20V - 130 150 nC - 23 26 ns - 11 15 ns - 165 210 ns - 100 140 ns - 0.85 1.05 mJ - 0.8 1.0 mJ On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time QG(ON) td(ON)I trI td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF ©2001 Fairchild Semiconductor Corporation IGBT and Diode at TJ = 25oC ICE = 10A VCE = 960V VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 20) HGTG10N120BND Rev. B HGTG10N120BND Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC TEST CONDITIONS MIN TYP MAX UNITS - 21 25 ns - 11 15 ns - 190 250 ns - 140 200 ns - 1.75 2.3 mJ - 1.1 1.4 mJ IEC = 10A - 2.55 3.2 V IEC = 10A, dIEC/dt = 200A/µs - 57 70 ns IEC = 1A, dIEC/dt = 200A/µs - 32 40 ns IGBT - - 0.42 oC/W Diode - - 1.25 oC/W IGBT and Diode at TJ = 150oC ICE = 10A VCE = 960V VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 20) NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 35 VGE = 15V 30 25 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation 150 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 60 50 TJ = 150oC, RG = 10Ω, VG = 15V, L = 400µH 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG10N120BND Rev. B HGTG10N120BND TJ = 150oC, RG = 10Ω, L = 2mH, V CE = 960V 100 50 TC = 75oC, VGE = 15V, IDEAL DIODE fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 10 fMAX2 = (PD - PC) / (EON + EOFF) TC PC = CONDUCTION DISSIPATION 75oC (DUTY FACTOR = 50%) 75oC 110oC RØJC = 0.42oC/W, SEE NOTES 110oC VGE 15V 12V 15V 12V 1 2 5 10 20 25 250 VCE = 840V, RG = 10Ω, TJ = 125oC 200 20 tSC 15 150 10 100 5 12 ICE , COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE <0.5%, VGE = 12V PULSE DURATION = 250µs 40 TC = 25oC 20 TC = 150oC 10 0 0 2 4 6 8 10 16 50 TC = -55oC TC = 25oC 40 30 TC = 150oC 20 10 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 0 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 2.0 5 RG = 10Ω, L = 2mH, VCE = 960V EOFF , TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) 15 50 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 4 TJ = 150oC, VGE = 12V, VGE = 15V 3 2 1 TJ = 25oC, VGE = 12V, VGE = 15V 0 14 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 50 TC = -55oC 13 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 30 ISC ISC, PEAK SHORT CIRCUIT CURRENT (A) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX , OPERATING FREQUENCY (kHz) Typical Performance Curves 0 5 10 15 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 20 RG = 10Ω, L = 2mH, VCE = 960V 1.5 TJ = 150oC, VGE = 12V OR 15V 1.0 TJ = 25oC, VGE = 12V OR 15V 0.5 0 0 5 10 15 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTG10N120BND Rev. B HGTG10N120BND Typical Performance Curves Unless Otherwise Specified (Continued) 50 RG = 10Ω, L = 2mH, VCE = 960V TJ = 25oC, TJ = 150oC, VGE = 12V RG = 10Ω, L = 2mH, VCE = 960V 40 35 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 40 30 25 TJ = 25oC, TJ = 150oC, VGE = 12V 30 20 10 20 TJ = 25oC OR TJ = 150oC, VGE = 15V TJ = 25oC, TJ = 150oC, VGE = 15V 15 0 5 15 10 0 20 0 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 15 20 RG = 10Ω, L = 2mH, VCE = 960V RG = 10Ω, L = 2mH, VCE = 960V 350 250 300 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 10 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 400 VGE = 12V, VGE = 15V, TJ = 150oC 250 200 200 TJ = 150oC, VGE = 12V OR 15V 150 100 150 100 TJ = 25oC, VGE = 12V OR 15V VGE = 12V, VGE = 15V, TJ = 25oC 50 0 5 15 10 20 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE <0.5%, VCE = 20V PULSE DURATION = 250µs 80 60 TC = 25oC 0 TC = 150oC 7 8 9 TC = -55oC 10 11 12 13 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation 14 20 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 100 20 15 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 40 5 0 20 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 15 IG (REF) = 1mA, RL = 60Ω, TC = 25oC 15 VCE = 1200V VCE = 800V 10 VCE = 400V 5 0 0 20 40 60 80 100 120 QG , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS HGTG10N120BND Rev. B HGTG10N120BND Unless Otherwise Specified (Continued) 4 C, CAPACITANCE (nF) FREQUENCY = 1MHz 3 CIES 2 1 CRES COES 0 0 5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 15 DUTY CYCLE <0.5%, TC = 110oC PULSE DURATION = 250µs 12 VGE = 15V 9 VGE = 10V 6 3 0 0 1 FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 100 0.5 0.2 0.1 10-1 0.05 0.02 t1 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 PD t2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 100 t, RECOVERY TIMES (ns) IF , FORWARD CURRENT (A) 70 150oC 10 25oC TC = 25oC, dIEC / dt = 200A/µs 60 50 trr 40 30 ta 20 -55oC tb 10 1 1 2 3 4 5 VF , FORWARD VOLTAGE (V) FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP ©2001 Fairchild Semiconductor Corporation 6 1 2 5 10 20 IF , FORWARD CURRENT (A) FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT HGTG10N120BND Rev. B HGTG10N120BND Test Circuit and Waveforms HGTG10N120BND 90% 10% VGE EON EOFF VCE L = 2mH 90% RG = 10Ω + - ICE VDD = 960V FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT 10% td(OFF)I tfI trI td(ON)I FIGURE 21. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTG10N120BND Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4