ETC HGT1S5N120BNDS9A

HGTG5N120BND, HGTP5N120BND,
HGT1S5N120BNDS
Data Sheet
December 2001
21A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND, HGTP5N120BND, and
HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used
is the development type TA49308. The Diode used is the
development type TA49058 (Part number RHRD6120).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Features
• 21A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
Formerly Developmental Type TA49306.
E
Ordering Information
PART NUMBER
C
COLLECTOR
(FLANGE)
PACKAGE
G
BRAND
HGTG5N120BND
TO-247
5N120BND
HGTP5N120BND
TO-220AB
5N120BND
HGT1S5N120BNDS
TO-263AB
5N120BND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120BNS9A.
Symbol
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
C
E
G
C
G
JEDEC TO-263AB
E
COLLECTOR
(FLANGE)
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Rev. B
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTG5N120BND
HGTP5N120BND
HGT1S5N120BNDS
UNITS
1200
V
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
21
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
10
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
40
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
30A at 1200V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
167
W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.33
W/oC
-55 to 150
oC
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
8
µs
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
15
µs
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125oC, RG = 25Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
MIN
TYP
MAX
UNITS
1200
-
-
V
-
-
250
µA
-
100
-
µA
-
-
1.5
mA
-
2.45
2.7
V
-
3.7
4.2
V
6.0
6.8
-
V
-
-
±250
nA
30
-
-
A
-
10.5
-
V
VGE = 15V
-
53
65
nC
VGE = 20V
-
60
72
nC
-
22
25
ns
-
15
20
ns
-
160
180
ns
-
130
160
ns
-
450
600
µJ
-
390
450
µJ
IC = 250µA, VGE = 0V
VCE = 1200V
IC = 5A,
VGE = 15V
TC = 25oC
TC = 125oC
TC = 150oC
TC = 25oC
TC = 150oC
IC = 45µA, VCE = VGE
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG = 25Ω, VGE = 15V,
L = 5mH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
VGEP
IC = 5A, VCE = 600V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
QG(ON)
td(ON)I
trI
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
©2001 Fairchild Semiconductor Corporation
IC = 5A,
VCE = 600V
IGBT and Diode at TJ = 25oC,
ICE = 5A,
VCE = 960V,
VGE = 15V,
RG = 25Ω,
L = 5mH,
Test Circuit (Figure 20)
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Rev. B
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
Diode Forward Voltage
VEC
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RθJC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
20
25
ns
-
15
20
ns
-
182
280
ns
-
175
200
ns
-
1000
1300
µJ
-
560
800
µJ
IEC = 10A
-
2.70
3.50
V
IEC = 7A, dlEC/dt = 200A/µs
-
50
65
ns
IEC = 1A, dlEC/dt = 200A/µs
-
30
40
ns
IGBT
-
-
0.75
oC/W
Diode
-
-
1.75
oC/W
IGBT and Diode at TJ = 150oC,
ICE = 5A,
VCE = 960V,
VGE = 15V,
RG = 25Ω,
L = 5mH,
Test Circuit (Figure 20)
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
ICE , DC COLLECTOR CURRENT (A)
25
VGE = 15V
20
15
10
5
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
©2001 Fairchild Semiconductor Corporation
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
35
TJ = 150oC, RG = 25Ω, VGE = 15V, L = 5mH
30
25
20
15
10
5
0
0
200
400
600
800
1000
1200
1400
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Rev. B
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
Unless Otherwise Specified (Continued)
TJ = 150oC, RG = 25Ω, L = 5mH, V CE = 960V
TC = 75oC, VGE = 15V TC VGE
IDEAL DIODE
75oC 15V
75oC 12V
200
100
50
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.75oC/W, SEE NOTES
10
TC VGE
110oC 15V
110oC 12V
4
6
8
ICE , COLLECTOR TO EMITTER CURRENT (A)
2
80
40
VCE = 840V, RG = 25Ω, TJ = 125oC
70
35
ISC
30
60
25
50
40
20
tSC
15
10
10
30
10
DUTY CYCLE <0.5%, VGE = 12V
PULSE DURATION = 250µs
TC = -55oC
20
TC = 25oC
TC = 150oC
10
5
0
0
2
4
6
8
10
14
15
20
25
TC = 25oC
TC = -55oC
TC = 150oC
20
15
10
5
0
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3000
900
EOFF, TURN-OFF ENERGY LOSS (µJ)
RG = 25Ω, L = 5mH, VCE = 960V
EON , TURN-ON ENERGY LOSS (µJ)
13
30
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2500
TJ = 150oC, VGE = 12V, VGE = 15V
2000
1500
1000
500
TJ = 25oC, VGE = 12V, VGE = 15V
0
12
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
15
11
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
25
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX , OPERATING FREQUENCY (kHz)
Typical Performance Curves
2
3
4
5
6
7
8
9
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
RG = 25Ω, L = 5mH, VCE = 960V
800
700
TJ = 150oC, VGE = 12V OR 15V
600
500
400
TJ = 25oC, VGE = 12V OR 15V
300
200
2
3
4
5
6
7
8
9
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Rev. B
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
Typical Performance Curves
Unless Otherwise Specified (Continued)
40
40
RG = 25Ω, L = 5mH, VCE = 960V
35
35
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
RG = 25Ω, L = 5mH, VCE = 960V
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
20
10
TJ = 25oC, TJ = 150oC, VGE = 15V
15
2
3
4
5
6
7
8
9
TJ = 25oC, TJ = 150oC, VGE = 15V
0
10
2
ICE , COLLECTOR TO EMITTER CURRENT (A)
5
6
7
8
9
10
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
250
250
RG = 25Ω, L = 5mH, VCE = 960V
RG = 25Ω, L = 5mH, VCE = 960V
225
VGE = 12V, VGE = 15V, TJ = 150oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
4
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
175
150
200
TJ = 150oC, VGE = 12V OR 15V
150
100
125
100
TJ = 25oC, VGE = 12V OR 15V
VGE = 12V, VGE = 15V, TJ = 25oC
2
3
4
5
6
7
8
9
50
10
2
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
16
80
DUTY CYCLE <0.5%, VCE = 20V
PULSE DURATION = 250µs
70
60
50
TC = 25oC
40
30
20
TC = 150oC
TC = -55oC
10
0
7
8
9
10
12
13
11
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
©2001 Fairchild Semiconductor Corporation
14
3
4
5
6
7
8
9
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
15
IG(REF) = 1mA, RL = 120Ω, TC = 25oC
14
VCE = 1200V
12
10
VCE = 800V
VCE = 400V
8
6
4
2
0
0
10
20
30
40
50
60
QG , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Rev. B
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
2.0
C, CAPACITANCE (nF)
FREQUENCY = 1MHz
1.5
CIES
1.0
0.5
COES
0
CRES
0
5
10
15
20
10
DUTY CYCLE < 0.5%, TC = 110oC
PULSE DURATION = 250µs
8
6
VGE = 15V
2
0
25
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE
VGE = 10V
4
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.5
0.2
0.1
10-1
0.05
0.02
t1
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD x ZθJC x RθJC) + TC
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
PD
t2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
100
60
50
t, RECOVERY TIME (ns)
IF, FORWARD CURRENT (A)
TC = 25oC, dlEC / dt = 200A/µs
150oC
10
25oC
0
1
2
3
4
5
6
7
VF, FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
©2001 Fairchild Semiconductor Corporation
40
30
ta
20
tb
10
-55oC
1
trr
8
0
1
2
3
4
5
IF, FORWARD CURRENT (A)
6
7
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Rev. B
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
Test Circuit and Waveforms
HGTG5N120BND
90%
10%
VGE
EON
L = 2mH
EOFF
VCE
RG = 25Ω
90%
+
-
VDD = 960V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in the
handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
Operating frequency information for a typical device (Figure 3)
is presented as a guide for estimating device performance for
a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows fMAX1 or
fMAX2 ; whichever is smaller at each point. The information is
based on measurements of a typica ldevice and is bounded
by the maximum rated junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such as
“ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers, the
hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V GEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup on
the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions are
possible. td(OFF)I and td(ON)I are defined in Figure 19. Device
turn-off delay can establish an additional frequency limiting
condition for an application other than TJM . td(OFF)I is
important when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (P C) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms shown
in Figure 21. EON is the integral of the instantaneous power
loss (ICE x VCE) during turn-on and EOFF is the integral of the
instantaneous power loss (ICE x VCE) during turn-off. All tail
losses are included in the calculation for EOFF ; i.e., the
collector current equals zero (ICE = 0).
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Rev. B
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4