ETC HGT1Y40N60C3D

HGT1Y40N60C3D
Data Sheet
December 2001
75A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGT1Y40N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49273. The diode
used in anti-parallel with the IGBT is the development type
TA49063.
Features
• 75A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . 100ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-264
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
E
C
G
Formerly developmental type TA49389.
Ordering Information
PART NUMBER
COLLECTOR
(FLANGE)
PACKAGE
HGT1Y40N60C3D
TO-264
PKG. NO.
G40N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGT1Y40N60C3D
UNITS
600
V
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
75
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
40
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
300
A
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
40A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
291
W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.33
W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
5
µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
10
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, R G = 3Ω .
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
TEST CONDITIONS
MIN
TYP
MAX
UNITS
600
-
-
V
-
-
250
µA
-
-
4.0
mA
-
1.3
1.8
V
-
1.4
2.0
V
3.1
4.5
6.0
V
-
-
±250
nA
VCE = 480V
200
-
-
A
VCE = 600V
40
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
7.2
-
V
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
275
302
nC
VGE = 20V
-
360
395
nC
-
47
-
ns
-
30
-
ns
-
185
-
ns
-
60
-
ns
-
850
-
mJ
IC = 250µA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 150oC
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG =
3Ω, VGE = 15V,
L = 400µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 1mH
Test Circuit (Figure 19)
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
-
1.0
1.2
mJ
Turn-Off Energy (Note 4)
EOFF
-
1.0
1.8
mJ
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 1mH
Test Circuit (Figure 19)
MIN
TYP
MAX
UNITS
-
41
-
ns
-
30
-
ns
-
360
450
ns
-
100
210
ns
-
860
-
µJ
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
-
2.0
2.4
mJ
Turn-Off Energy (Note 4)
EOFF
-
2.5
4
mJ
IEC = 40A
-
2.0
2.5
V
IEC = 40A, dIEC/dt = 100A/µs
-
50
65
ns
IEC = 1.0A, dIEC/dt = 100A/µs
-
38
40
ns
Diode Forward Voltage
VEC
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RθJC
IGBT
-
-
0.43
oC/W
Thermal Resistance Junction To Case
RθJC
Diode
-
-
1.2
oC/W
NOTES:
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
I CE , DC COLLECTOR CURRENT (A)
80
VGE = 15V
70
60
50
PACKAGE
LIMIT
40
30
20
10
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
©2001 Fairchild Semiconductor Corporation
150
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
225
TJ = 150oC, R G = 3Ω, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
TJ = 150oC, R G = 3Ω, L = 1mH, V CE = 480V
100
10
TC
VGE
75oC
75oC
110oC
110oC
15V
10V
15V
10V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I )
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43oC/W, SEE NOTES
1
2
5
10
40
80
20
ISC
16
625
12
500
8
375
tSC
4
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
TC = 150 oC
150
TC = 25 oC
100
50
0
0
1
2
3
4
5
6
7
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE <0.5%, VGE = 10V
PULSE DURATION = 250µs
TC = -55oC
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
250
200
TC = -55oC
100
TC = 25oC
50
0
0
6
TJ = 25oC, TJ = 150 oC, VGE = 15V
4
2
0
20
30
40
50
60
70
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
1
2
3
4
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EOFF, TURN-OFF ENERGY LOSS (mJ)
EON2 , TURN-ON ENERGY LOSS (mJ)
8
10
TC = 150oC
150
6
R G = 3Ω, L = 1mH, VCE = 480V
TJ = 25 oC, TJ = 150 oC, VGE = 10V
0
250
15
14
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
10
13
300
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
12
12
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
300
200
11
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
250
750
VCE = 360V, RG = 3Ω, TJ = 125 oC
ISC , PEAK SHORT CIRCUIT CURRENT (A)
Unless Otherwise Specified (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX , OPERATING FREQUENCY (kHz)
Typical Performance Curves
80
R G = 3Ω, L = 1mH, VCE = 480V
5
4
TJ = 150oC; VGE = 10V OR 15V
3
2
1
TJ = 25oC; VGE = 10V OR 15V
0
0
10
20
30
40
50
60
70
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
Typical Performance Curves
Unless Otherwise Specified (Continued)
400
RG = 3Ω, L = 1mH, VCE = 480V
RG = 3Ω, L = 1mH, VCE = 480V
70
350
TJ = 25oC, TJ = 150 oC, VGE = 10V
65
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
75
60
TJ = 25oC, TJ = 150 oC, VGE = 10V
55
50
45
40
TJ = 25oC, TJ = 150oC, VGE = 15V
300
250
TJ = 25oC AND TJ = 150oC, VGE = 15V
200
150
100
50
35
0
30
0
10
20
30
40
50
60
0
80
70
ICE , COLLECTOR TO EMITTER CURRENT (A)
30
40
50
60
70
80
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
160
400
RG = 3Ω, L = 1mH, VCE = 480V
RG = 3Ω, L = 1mH, VCE = 480V
140
350
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
TJ = 150 oC, VGE = 10V, VGE = 15V
250
200
TJ = 150oC, VGE = 10V, VGE = 15V
120
100
80
60
TJ = 25oC, VGE = 10V OR 15V
150
40
TJ = 25oC, VGE = 10V, VGE = 15V
20
100
0
10
20
30
40
50
60
70
0
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
250
TC = 150oC
150
100
TC = -55oC
50
TC = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
200
20
30
40
50
60
70
80
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
300
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
IG(REF) = 1mA, R L = 7.5Ω, TC = 25 oC
14
12
10
VCE = 600V
8
6
VCE = 200V
VCE = 400V
4
2
0
0
4
5
6
7
8
9
10
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
©2001 Fairchild Semiconductor Corporation
11
0
50
100
150
200
250
300
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
Typical Performance Curves
Unless Otherwise Specified (Continued)
60
200
50
tr , RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
TC = 25oC, dIEC /dt = 100A/µs
100oC
10
150oC
1
0
25oC
t rr
40
30
ta
20
tb
10
0
0.5
1.0
1.5
2.0
VEC , FORWARD VOLTAGE (V)
2.5
3.0
1
FIGURE 15. VfDIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
5
10
IEC , FORWARD CURRENT (A)
30
FIGURE 16. RECOVERY TIMES vs FORWARD CURRENT
15.0
FREQUENCY = 1MHz
CIES
C, CAPACITANCE (nF)
12.5
10.0
7.5
C OES
5.0
2.5
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ZθJC , NORMALIZED THERMAL RESPONSE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
100
0.5
0.2
0.1
10-1
0.05
t1
0.02
DUTY FACTOR, D = t1 / t2
0.01
10-2
PEAK TJ = (PD X ZθJC X RθJC) + TC
PD
t2
SINGLE PULSE
10-5
10-4
10 -3
10 -2
10-1
10 0
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 18. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
Test Circuit and Waveforms
C
90%
L = 1mH
RHRP3060
10%
VGE
EON2
EOFF
VCE
RG = 3Ω
90%
+
-
VDD = 480V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FIGURE 20. SWITCHING TEST WAVEFORMS
HGTG40N60C3 Rev. B
HGT1Y40N60C3D
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V GEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 20.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM- TC)/RθJC.
The sum of device switching and conduction losses must
not exceed P D . A 50% duty factor was used (Figure 3) and
the conduction losses (P C ) are approximated by
PC = (V CE x ICE)/2.
EON2 and E OFF are defined in the switching waveforms
shown in Figure 20. E ON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in
the calculation for E OFF; i.e., the collector current equals
zero (ICE = 0).
HGTG40N60C3 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4