HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49273. The diode used in anti-parallel with the IGBT is the development type TA49063. Features • 75A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . 100ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC STYLE TO-264 The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. E C G Formerly developmental type TA49389. Ordering Information PART NUMBER COLLECTOR (FLANGE) PACKAGE HGT1Y40N60C3D TO-264 PKG. NO. G40N60C3D NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTG40N60C3 Rev. B HGT1Y40N60C3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGT1Y40N60C3D UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 75 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 40 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 40A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 291 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.33 W/oC Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 5 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, R G = 3Ω . Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS MIN TYP MAX UNITS 600 - - V - - 250 µA - - 4.0 mA - 1.3 1.8 V - 1.4 2.0 V 3.1 4.5 6.0 V - - ±250 nA VCE = 480V 200 - - A VCE = 600V 40 - - A IC = IC110, VCE = 0.5 BVCES - 7.2 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 275 302 nC VGE = 20V - 360 395 nC - 47 - ns - 30 - ns - 185 - ns - 60 - ns - 850 - mJ IC = 250µA, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC IC = IC110, VGE = 15V TC = 25oC TC = 150oC IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 3Ω, VGE = 15V, L = 400µH Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time VGEP QG(ON) td(ON)I trI td(OFF)I tfI IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 19) Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 1.0 1.2 mJ Turn-Off Energy (Note 4) EOFF - 1.0 1.8 mJ ©2001 Fairchild Semiconductor Corporation HGTG40N60C3 Rev. B HGT1Y40N60C3D Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 19) MIN TYP MAX UNITS - 41 - ns - 30 - ns - 360 450 ns - 100 210 ns - 860 - µJ Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 2.0 2.4 mJ Turn-Off Energy (Note 4) EOFF - 2.5 4 mJ IEC = 40A - 2.0 2.5 V IEC = 40A, dIEC/dt = 100A/µs - 50 65 ns IEC = 1.0A, dIEC/dt = 100A/µs - 38 40 ns Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC IGBT - - 0.43 oC/W Thermal Resistance Junction To Case RθJC Diode - - 1.2 oC/W NOTES: 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified I CE , DC COLLECTOR CURRENT (A) 80 VGE = 15V 70 60 50 PACKAGE LIMIT 40 30 20 10 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation 150 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 225 TJ = 150oC, R G = 3Ω, VGE = 15V, L = 100µH 200 175 150 125 100 75 50 25 0 0 100 200 300 400 500 600 700 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG40N60C3 Rev. B HGT1Y40N60C3D TJ = 150oC, R G = 3Ω, L = 1mH, V CE = 480V 100 10 TC VGE 75oC 75oC 110oC 110oC 15V 10V 15V 10V fMAX1 = 0.05 / (td(OFF)I + td(ON)I ) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.43oC/W, SEE NOTES 1 2 5 10 40 80 20 ISC 16 625 12 500 8 375 tSC 4 10 ICE , COLLECTOR TO EMITTER CURRENT (A) TC = 150 oC 150 TC = 25 oC 100 50 0 0 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250µs TC = -55oC DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 250 200 TC = -55oC 100 TC = 25oC 50 0 0 6 TJ = 25oC, TJ = 150 oC, VGE = 15V 4 2 0 20 30 40 50 60 70 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 1 2 3 4 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 8 10 TC = 150oC 150 6 R G = 3Ω, L = 1mH, VCE = 480V TJ = 25 oC, TJ = 150 oC, VGE = 10V 0 250 15 14 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 10 13 300 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 12 12 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 300 200 11 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 250 750 VCE = 360V, RG = 3Ω, TJ = 125 oC ISC , PEAK SHORT CIRCUIT CURRENT (A) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX , OPERATING FREQUENCY (kHz) Typical Performance Curves 80 R G = 3Ω, L = 1mH, VCE = 480V 5 4 TJ = 150oC; VGE = 10V OR 15V 3 2 1 TJ = 25oC; VGE = 10V OR 15V 0 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTG40N60C3 Rev. B HGT1Y40N60C3D Typical Performance Curves Unless Otherwise Specified (Continued) 400 RG = 3Ω, L = 1mH, VCE = 480V RG = 3Ω, L = 1mH, VCE = 480V 70 350 TJ = 25oC, TJ = 150 oC, VGE = 10V 65 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 75 60 TJ = 25oC, TJ = 150 oC, VGE = 10V 55 50 45 40 TJ = 25oC, TJ = 150oC, VGE = 15V 300 250 TJ = 25oC AND TJ = 150oC, VGE = 15V 200 150 100 50 35 0 30 0 10 20 30 40 50 60 0 80 70 ICE , COLLECTOR TO EMITTER CURRENT (A) 30 40 50 60 70 80 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 160 400 RG = 3Ω, L = 1mH, VCE = 480V RG = 3Ω, L = 1mH, VCE = 480V 140 350 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 TJ = 150 oC, VGE = 10V, VGE = 15V 250 200 TJ = 150oC, VGE = 10V, VGE = 15V 120 100 80 60 TJ = 25oC, VGE = 10V OR 15V 150 40 TJ = 25oC, VGE = 10V, VGE = 15V 20 100 0 10 20 30 40 50 60 70 0 80 ICE , COLLECTOR TO EMITTER CURRENT (A) 250 TC = 150oC 150 100 TC = -55oC 50 TC = 25oC VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs 200 20 30 40 50 60 70 80 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 16 300 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT ICE , COLLECTOR TO EMITTER CURRENT (A) 10 IG(REF) = 1mA, R L = 7.5Ω, TC = 25 oC 14 12 10 VCE = 600V 8 6 VCE = 200V VCE = 400V 4 2 0 0 4 5 6 7 8 9 10 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation 11 0 50 100 150 200 250 300 QG, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS HGTG40N60C3 Rev. B HGT1Y40N60C3D Typical Performance Curves Unless Otherwise Specified (Continued) 60 200 50 tr , RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) TC = 25oC, dIEC /dt = 100A/µs 100oC 10 150oC 1 0 25oC t rr 40 30 ta 20 tb 10 0 0.5 1.0 1.5 2.0 VEC , FORWARD VOLTAGE (V) 2.5 3.0 1 FIGURE 15. VfDIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 5 10 IEC , FORWARD CURRENT (A) 30 FIGURE 16. RECOVERY TIMES vs FORWARD CURRENT 15.0 FREQUENCY = 1MHz CIES C, CAPACITANCE (nF) 12.5 10.0 7.5 C OES 5.0 2.5 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 DUTY FACTOR, D = t1 / t2 0.01 10-2 PEAK TJ = (PD X ZθJC X RθJC) + TC PD t2 SINGLE PULSE 10-5 10-4 10 -3 10 -2 10-1 10 0 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 18. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE ©2001 Fairchild Semiconductor Corporation HGTG40N60C3 Rev. B HGT1Y40N60C3D Test Circuit and Waveforms C 90% L = 1mH RHRP3060 10% VGE EON2 EOFF VCE RG = 3Ω 90% + - VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 20. SWITCHING TEST WAVEFORMS HGTG40N60C3 Rev. B HGT1Y40N60C3D Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of V GEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM- TC)/RθJC. The sum of device switching and conduction losses must not exceed P D . A 50% duty factor was used (Figure 3) and the conduction losses (P C ) are approximated by PC = (V CE x ICE)/2. EON2 and E OFF are defined in the switching waveforms shown in Figure 20. E ON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for E OFF; i.e., the collector current equals zero (ICE = 0). HGTG40N60C3 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4