FAIRCHILD HGTG20N120CND

HGTG20N120CND
Data Sheet
December 2001
63A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N120CND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Features
• 63A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
Formerly Developmental Type TA49305.
Ordering Information
PART NUMBER
HGTG20N120CND
PACKAGE
TO-247
BRAND
20N120CND
NOTE: When ordering, use the entire part number.
Symbol
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
©2001 Fairchild Semiconductor Corporation
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
HGTG20N120CND Rev. B
HGTG20N120CND
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 12V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
HGTG20N120CND
1200
UNITS
V
63
30
160
±20
±30
100A at 1200V
390
3.12
-55 to 150
260
8
15
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 960V, TJ = 125oC, RG = 3Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
VCE = 1200V
IC = 20A,
VGE = 15V
MIN
TYP
MAX
UNITS
1200
-
-
V
15
-
-
V
-
-
250
µA
-
450
-
µA
-
-
6
mA
-
2.1
2.4
V
-
2.9
3.5
V
6.0
6.9
-
V
-
-
±250
nA
100
-
-
A
-
10.2
-
V
VGE = 15V
-
155
200
nC
VGE = 20V
-
200
250
nC
-
23
28
ns
-
17
22
ns
-
200
240
ns
-
220
270
ns
-
2.0
2.5
mJ
-
2.8
3.3
mJ
TC = 25oC
TC = 125oC
TC = 150oC
TC = 25oC
TC = 150oC
IC = 150µA, VCE = VGE
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG = 3Ω, VGE = 15V,
L = 200µH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
VGEP
IC = 20A, VCE = 600V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
QG(ON)
td(ON)I
trI
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
©2001 Fairchild Semiconductor Corporation
IC = 20A,
VCE = 600V
IGBT and Diode at TJ = 25oC
ICE = 20A
VCE = 960V
VGE = 15V
RG = 3Ω
L = 1mH
Test Circuit (Figure 20)
HGTG20N120CND Rev. B
HGTG20N120CND
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Current Turn-On Delay Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
Diode Forward Voltage
VEC
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
MIN
TYP
MAX
UNITS
-
21
26
ns
-
17
22
ns
-
225
270
ns
-
340
400
ns
-
3.8
5.0
mJ
-
4.6
5.3
mJ
IEC = 20A
-
2.6
3.2
V
IEC = 20A, dIEC/dt = 200A/µs
-
62
75
ns
IEC = 2A, dIEC/dt = 200A/µs
-
44
55
ns
IGBT
-
-
0.32
oC/W
Diode
-
-
0.75
oC/W
IGBT and Diode at TJ = 150oC
ICE = 20A
VCE = 960V
VGE = 15V
R G = 3Ω
L = 1mH
Test Circuit (Figure 20)
td(ON)I
Current Rise Time
TEST CONDITIONS
RθJC
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
ICE , DC COLLECTOR CURRENT (A)
70
VGE = 15V
60
50
40
30
20
10
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
©2001 Fairchild Semiconductor Corporation
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
120
TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH
100
80
60
40
20
0
0
200
400
600
800
1000
1200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTG20N120CND Rev. B
HGTG20N120CND
fMAX, OPERATING FREQUENCY (kHz)
TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 960V
100
TC = 75oC, VGE = 15V, IDEAL DIODE
50
10
1
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
TC
fMAX2 = (PD - PC) / (EON + EOFF)
75oC
PC = CONDUCTION DISSIPATION 75oC
(DUTY FACTOR = 50%)
110oC
RØJC = 0.32oC/W, SEE NOTES
110oC
VGE
15V
12V
15V
12V
10
30
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
5
25
ISC
20
250
15
200
tSC
10
5
40
150
12
TC = 150oC
60
40
TC = 25oC
20
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
6
8
2
4
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
10
6
4
2
TJ = 25oC, VGE = 12V, VGE = 15V
5
10
15
20
25
30
35
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
TC = 25oC
80
TC = -55oC
60
TC = 150oC
40
20
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
0
0
2
4
6
8
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EOFF , TURN-OFF ENERGY LOSS (mJ)
EON , TURN-ON ENERGY LOSS (mJ)
TJ = 150oC, VGE = 12V, VGE = 15V
8
0
100
8
RG = 3Ω, L = 1mH, VCE = 960V
10
100
16
15
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
12
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
80
0
14
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
100
0
13
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
TC = -55oC
300
VCE = 960V, RG = 3Ω, TJ = 125oC
ISC , PEAK SHORT CIRCUIT CURRENT (A)
Unless Otherwise Specified (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Typical Performance Curves
RG = 3Ω, L = 1mH, VCE = 960V
7
6
TJ = 150oC, VGE = 12V OR 15V
5
4
3
TJ = 25oC, VGE = 12V OR 15V
2
1
0
40
5
10
15
20
25
30
35
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTG20N120CND Rev. B
HGTG20N120CND
Typical Performance Curves
120
RG = 3Ω, L = 1mH, VCE = 960V
RG = 3Ω, L = 1mH, VCE = 960V
100
35
TJ = 25oC, TJ = 150oC, VGE = 12V
TJ = 25oC, TJ = 150oC, VGE = 12V
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
40
Unless Otherwise Specified (Continued)
30
25
80
60
40
20
20
TJ = 25oC, TJ = 150oC, VGE = 15V
TJ = 25oC OR TJ = 150oC, VGE = 15V
15
5
10
15
25
20
30
35
0
40
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
700
RG = 3Ω, L = 1mH, VCE = 960V
600
400
VGE = 12V, VGE = 15V, TJ = 150oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
RG = 3Ω, L = 1mH, VCE = 960V
350
300
VGE = 12V, VGE = 15V, TJ = 25oC
250
500
400
TJ = 150oC, VGE = 12V OR 15V
300
200
200
150
40
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
450
TJ = 25oC, VGE = 12V OR 15V
100
5
10
15
20
25
30
35
5
40
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
20
VGE , GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
200
150
TC = 25oC
50
TC = 150oC
TC = -55oC
0
7
11
9
10
12
13
VGE , GATE TO EMITTER VOLTAGE (V)
8
FIGURE 13. TRANSFER CHARACTERISTIC
©2001 Fairchild Semiconductor Corporation
14
20
25
30
35
40
15
IG(REF) = 2mA, RL = 30Ω, TC = 25oC
15
VCE = 1200V
VCE = 800V
10
VCE = 400V
5
0
6
15
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
250
100
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
15
20
25
30
35
ICE , COLLECTOR TO EMITTER CURRENT (A)
0
50
100
150
QG , GATE CHARGE (nC)
200
FIGURE 14. GATE CHARGE WAVEFORMS
HGTG20N120CND Rev. B
HGTG20N120CND
Unless Otherwise Specified (Continued)
6
FREQUENCY = 1MHz
C, CAPACITANCE (nF)
5
CIES
4
3
2
1
0
COES
CRES
0
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
30
DUTY CYCLE < 0.5%, TC = 110oC
PULSE DURATION = 250µs
25
VGE = 15V OR 12V
20
VGE = 10V
15
10
5
0
0
1
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE
3
2
4
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.5
0.2
0.1
10-1
t1
0.05
PD
t2
0.02
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
70
TC = 25oC, dIEC/dt = 200A/µs
60
150oC
t, RECOVERY TIMES (ns)
IF , FORWARD CURRENT (A)
100
25oC
10
50
t rr
40
ta
30
tb
20
1
10
0
1
2
3
4
VF , FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
©2001 Fairchild Semiconductor Corporation
5
1
2
5
10
20
IF , FORWARD CURRENT (A)
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
HGTG20N120CND Rev. B
HGTG20N120CND
Test Circuit and Waveforms
HGTG20N120CND
90%
10%
VGE
EON
EOFF
L = 1mH
VCE
90%
RG = 3Ω
ICE
+
-
VDD = 960V
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 21. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC .
The sum of device switching and conduction losses must not
exceed PD . A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
HGTG20N120CND Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
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DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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The datasheet is printed for reference information only.
Rev. H4