2SA1390 Silicon PNP Epitaxial Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1390 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –35 V Collector to emitter voltage VCEO –35 V Emitter to base voltage VEBO –4 V Collector current IC –500 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –35 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –35 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –4 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –0.5 µA VCB = –20 V, IE = 0 Collector to emitter saturation voltage VCE(sat) — –0.2 –0.6 V I C = –150 mA, IB = –15 mA*2 DC current transfer ratio hFE1* 1 60 — 320 VCE = –3 V, IC = –10 mA DC current transfer ratio hFE2 10 — — VCE = –3 V, IC = –500 mA*2 Base to emitter voltage VBE — –0.64 — Notes: 1. The 2SA1390 is grouped by hFE1 as follows. 2. Pulse test B C D 60 to 120 100 to 200 160 to 320 See characteristic curves of 2SA673. 2 V VCE = –3 V, IC = –10 mA 2SA1390 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 200 100 0 100 150 50 Ambient Temperature Ta (°C) 3 Unit: mm 2.2 Max 0.6 0.6 Max 0.45 ± 0.1 14.5 Min 1.8 Max 3.2 Max 4.2 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK — — 0.10 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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