HITACHI 2SD2491

2SD2491, 2SD2492
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Features
• Isolated package
TO-126FM
Outline
TO-126FM
1
2
1. Emitter
2. Collector
3. Base
3
2SD2491, 2SD2492
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SD2491
2SD2492
Unit
Collector to base voltage
VCBO
160
200
V
Collector to emitter voltage
VCEO
160
200
V
Emitter to base voltage
VEBO
5
5
V
Collector current
IC
100
100
mA
Collector power dissipation
PC
1.35
1.35
W
8
8
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Note:
1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
2SD2491
2SD2492
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
160
—
—
200
—
—
V
I C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
160
—
—
200
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
5
—
—
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
10
—
—
—
µA
VCB = 140 V, IE = 0
—
—
—
—
—
10
µA
VCB = 160 V, IE = 0
60
—
320
60
—
320
VCE = 5 V, IC = 10 mA
DC current transfer ratio hFE2
30
—
—
30
—
—
VCE = 5 V, IC = 1 mA
Base to emitter voltage VBE
—
—
1.5
—
—
1.5
V
VCE = 5 V, IC = 10 mA
Collector to emitter
saturation voltage
—
—
2
—
—
2
V
I C = 30 mA, IB = 3 mA
Gain bandwidth product f T
—
140
—
—
140
—
MHz
VCE = 5 V, IC = 10 mA
Collector output
capacitance
—
3.8
—
—
3.8
—
pF
VCB = 10 V, IE = 0
f = 1 MHz
DC current transfer ratio hFE1*
Note:
1
VCE(sat)
Cob
1. The 2SD2491 and 2SD2492 are grouped by h FE1 and its specification is as follows.
B
C
D
60 to 120
100 to 200
160 to 320
2
2SD2491, 2SD2492
See characteristic curves of 2SD1609, 2SD1610.
Maximum Collector Dissipation Curve
Collector Power Dissipation Pc (W)
8
6
Tc
4
2
1.35W
0
Ta
50
100
150
200
Case Temperature Tc (°C)
Ambient Temperature Ta (°C)
3
8.0 ± 0.4
6.0
φ 3.1 +0.15
–0.1
3.2 ± 0.4
1.9 Max
11.0 ± 0.5
3.5
1.0
Unit: mm
15.6 ± 0.5
1.7
1.4
0.65
2.29 ± 0.5
0.7
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126FM
—
—
0.87 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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