STMICROELECTRONICS TDA1910

TDA1910
®
10W AUDIO AMPLIFIER WITH MUTING
DESCRIPTION
The TDA 1910 is a monolithic integrated circuit in
MULTIWATT® package, intended for use in Hi-Fi
audio power applications, as high quality TV sets.
The TDA 1910 meets the DIN 45500 (d = 0.5%)
guaranteed output power of 10W when used at
24V/4W. At 24V/8W the output power is 7W min.
Features:
– muting facility
– protection against chip over temperature
– very low noise
– high supply voltage rejection
– low "switch-on" noise.
The TDA 1910 is assembled in MULTIWATT®
package that offers:
– easy assembly
– simple heatsink
Multiwatt 11V
Multiwatt 11H
ORDERING NUMBERS:
TDA1910 (Multiwatt11 Vertical)
TDA1910HS (Multiwatt11 Horizontal)
– space and cost saving
– high reliability
ABSOLUTE MAXIMUM RATINGS
Symbol
Vs
Io
Io
Vi
Vi
V11
Ptot
Tstg, Tj
Parameter
Supply voltage
Output peak current (non repetitive)
Output peak current (repetitive)
Input voltage
Differential input voltage
Muting thresold voltage
Power dissipation at Tcase = 90°C
Storage and junction temperature
Value
30
3.5
3.0
0 to + Vs
±7
Vs
20
-40 to 150
Unit
V
A
A
V
V
V
W
°C
TEST CIRCUIT
(*) See fig. 13.
September 2003
1/15
TDA1910
PIN CONNECTION (Top view)
SCHEMATIC DIAGRAM
2/15
TDA1910
TEST CIRCUIT
(*) See fig. 13.
MUTING CIRCUIT
3/15
TDA1910
THERMAL DATA
Symbol
Rth j-case
Parameter
Thermal resistance junction-case
max
Value
Unit
3
°C/W
ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Tamb = 25 °C, Rth (heatsink) = 4°C/W, unless
otherwise specified)
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
30
V
9.2
12.4
10
13.4
V
32
35
mA
Vs
Supply voltage
Vo
Quiescent output voltage
Vs = 18V
Vs = 24V
Id
Quiescent drain current
Vs = 18V
Vs = 24V
19
21
Output stage saturation voltage
IC = 2A
1
IC = 3A
1.6
VCE sat
Po
d
d
4/15
Output power
Harmonic distortion
Intermodulation distortion
8
8.3
11.5
d = 0.5%
Vs = 18V
Vs = 24V
Vs = 24V
f = 40 to 15,000Hz
RL= 4Ω
RL = 4Ω
RL = 8Ω
6.5
10
7
7
12
7.5
d = 10%
Vs = 18V
Vs = 24V
Vs = 24V
f = 1 KHz
RL = 4Ω
RL = 4Ω
RL = 8Ω
8.5
15
9
9.5
17
10
f = 40 to 15,000 Hz
Vs = 18V
RL = 4Ω
Po = 50 mW to 6.5W
Vs = 24V
RL = 4Ω
Po = 50 mW to 10W
Vs = 24V
RL = 8Ω
Po = 50 mW to 7W
RL = 4Ω
Po = 10W
Vs = 24V
f2 = 8 KHz
f1 = 250 Hz
(DIN 45500)
F = 1 KHz,
Vs = 18V
vs = 24V
Vs = 24V
RL = 4Ω Po = 7 W
RL = 4Ω Po = 12 W
RL = 8Ω Po = 7.5W
Vi
Input saturation voltage (rms)
Vs = 18V
Vs = 24V
1.8
2.4
Ri
Input resistance (pin 5)
f = 1 KHz
60
Id
Drain current
Vs = 24V
RL = 4Ω
RL = 8Ω
f = 1 KHz
Po = 12W
Po = 7.5W
0.5
0.2
0.5
0.2
0.5
170
220
245
Input sensitivity
W
0.2
0.2
Vi
V
%
%
mV
V
100
KΩ
820
475
mA
TDA1910
ELECTRICAL CHARACTERISTICS (continued)
Symbol
h
Parameter
Efficiency
Test condition
Vs = 24V
RL = 4Ω
RL = 8Ω
f = 1 KHz
Po = 12W
Po = 7.5W
BW
Small signal bandwidth
Vs = 24V
RL = 4Ω
BW
Power bandwidth
Vs = 24V
Po = 12W
RL = 4Ω
d ≤ 5%
Gv
Voltage gain (open loop)
f = 1 KHz
Gv
Voltage gain (closed loop)
Vs = 24V
f = 1 KHz
eN
Total input noise
S/N
SVR
Tsd
Signal to noise ratio
Supply voltage rejection
Vs = 24V
Po = 12W
RL = 4Ω
Min.
Po = 1W
RL = 4Ω
Po = 1W
Max.
Unit
62
65
%
10 to 120,000
Hz
40 to 15,000
Hz
75
dB
29.5
30
30.5
dB
Rg = 50Ω
Rg = 1KΩ
Rg = 10KΩ
(°)
1.2
1.3
1.5
3.0
3.2
4.0
µV
Rg = 50Ω
Rg = 1KΩ
Rg = 10KΩ
(°°)
2.0
2.0
2.2
5.0
5.2
6.0
µV
Rg = 10KΩ
Rg = 0
(°)
97
103
105
dB
Rg = 10KΩ
Rg = 0
(°°)
93
100
100
dB
50
60
dB
110
125
°C
Vs = 24V
RL = 4Ω
fripple = 100 Hz
Rg = 10 KΩ
Thermal sjut-down case (*)
temperature
Typ.
Ptot = 8W
MUTING FUNCTION (Refer to Muting circuit)
VT
VT
R1
Muting-off threshold voltage
(pin 11)
1.9
4.7
Muting-on threshold voltage
(pin 11)
0
1.3
6
Vs
Input resistance (pin 1)
Muting off
80
Muting on
R11
Input resistance (pin 11)
AT
Muting attenuation
200
10
150
Rg + R1 = 10 KΩ
50
V
V
KΩ
30
Ω
KΩ
60
dB
Note :
(°) Weighting filter = curve A.
(° °) Filter with noise bandwidth: 22 Hz to 22 KHz.
(*) See fig. 29 and fig. 30.
5/15
TDA1910
Figure 1. Quiescent output
voltage vs. supply voltage
Figure 2. Quiescent drain
current vs. supply voltage
Figure 3. Open loop frequency response
Figure 4. Output power vs.
supply voltage
Figure 5. Output power vs.
supply voltage
Fi gure 6. Distortion vs.
output power
Fi gure 7. Distortion vs.
output power
Figure 8. Output power vs.
frequency
Figure 9. Output power vs.
frequency
6/15
TDA1910
Figure 10. Output power vs.
input voltage
Figure 11. Output power vs.
input voltage
Figure 12. Total input noise
vs. source resistance
Figure 13. Values of capacitor CX vs. bandwidth (BW)
and gain (GV)
Figure 14. Supply voltage
rejection vs. voltage gain
Figure 15. Supply voltage
re je cti o n
v s.
so urce
resistance
Figure 16. Power dissipation and efficiency vs. output
power
Figure 17. Power dissipation and efficiency vs. output
power
F i gu re 1 8. Ma x p o wer
d i ssi p ati o n vs. sup pl y
voltage
7/15
TDA1910
APPLICATION INFORMATION
Figure 19. Application circuit without muting
Figure 21. Application circuit with muting
8/15
Figure 20. PC board and component lay-out of
the circuit of fig. 19 (1:1 scale)
Performance (circuits of fig. 19 and 21)
Po = 12W (40 to 15000 Hz, d ≤ 0.5%)
Vs = 24V
Id = 0.82A
Gv = 30 dB
TDA1910
APPLICATION INFORMATION (continued)
Figure 22. Two position DC tone control (10 dB boost 50 Hz and
20 KHz) using change of pin 1 resistance (muting function)
Figure 23. Frequency response of the circuit of fig. 22
Figure 24. 10 dB 50 Hz boos tone control using change of pin 1
resistance (muting function)
Figure 25. Frequency response of the circuit of fig. 24
Figure 26. Squelch function in TV applications
Figure 27. Delayed muting circuit
9/15
TDA1910
MUTING FUNCTION
The output signal can be inhibited applying a DC voltage VT to pin 11, as shown in fig. 28
Figure 28
The input resistance at pin 1 depends on the threshold voltage VT at pin 11 and is typically.
R1 = 200 KΩ @ 1.9V ≤ VT ≤ 4.7V
R1 = 10 Ω
0V ≤ VT ≤ 1.3V
@ 6V ≤ VT ≤ Vs
muting-off
muting-on
Referring to the following input stage, the possible attenuation of the input signal and therefore of the output
signal can be found using the following expression.
AT =
Vi
V5
=
Rg + R5 ⁄ ⁄ R1
R5 ⁄ ⁄ R1
where R5 ≅ 100 KΩ
Considering Rg = 10 KΩ the attenuation in the
muting-on condition is typically AT = 60 dB. In the
muting-off condition, the attenuation is very low,
typically 1.2 dB.
A very low current is necessary to drive the threshold voltage VT because the input resistance at pin
11 is greater than 150 KΩ. The muting function can
be used in many cases, when a temporary inhibition
of the output signal is requested, for example:
- in switch-on condition, to avoid preamplifier
power-on transients (see fig. 27)
10/15
- during commutations at the input stages.
- during the receiver tuning.
The variable impedance capability at pin 1 can be
useful in many applications and we have shown 2
examples in fig. 22 and 24, where it has been used
to change the feedback network, obtaining 2 different frequency responses.
TDA1910
APPLICATION SUGGESTION
The recommended values of the components are those shown on application circuit of fig. 21. Different
values can be used.
The following table can help the designer.
Component
Raccom.
value
Purpose
Larger than
Smaller than
recommended value recommended value
Rg + R1
10KΩ
Input signal imped.
for muting operation
Increase of the atteDecrease of the
nuation in muting-on
attenuation in muting
condition. Decrease
on condition.
of the input sensitivity.
R2
3.3KΩ
Close loop gain
setting.
Increase of gain.
Decrease of gain.
Increase quiescent
current.
R3
100Ω
Close loop gain
setting.
Decrease of gain.
Increase of gain.
R4
1Ω
Frequency stability
Danger of oscillation
at high frequencies
with inductive loads.
P1
20KΩ
Volume
potentiometer.
Increase of the
switch-on noise.
C1
C2
C3
1 µF
1 µF
0.22µF
Input DC decoupling.
C4
2.2µF
Inverting input DC
decoupling.
C5
0.1µF
Supply voltage
bypass.
C6
10µF
Ripple rejection.
C7
47µF
C8
0.22µF
C9
2200µF
(RL = 4Ω)
1000 µF
(RL = 8Ω)
Decrease of the input
impedance and of the
input level.
Allowed range
Min.
Max.
9 R3
R2/9
10KΩ
100KΩ
Higher low frequency
cutoff.
Increase of the
switch-on noise.
Higher low frequency
cutoff.
0.1µF
Danger of oscillations.
Increase of SVR.
Increase of the
switch-on time
Degradation of
SVR
2.2µF
100µF
Bootstrap.
Increase of the distortion at low frequency.
10µF
100µF
Frequency stability.
Danger of oscillation.
Output DC
decoupling.
Higher low frequency
cutoff.
11/15
TDA1910
THERMAL SHUT-DOWN
The presence of a thermal limiting circuit offers the
following advantages:
1) An overload on the output (even if it is permanent), or an above limit ambient temperature
can be easily supported since the Tj cannot be
higher than 150°C.
2) The heatskink can have a smaller factor of
safety compared with that of a conventional
Figure 29. Output power and
dr ai n c urr en t vs. case
temperature
circuit. There is no possibility of device damage
due to high junction temperature.
If for any reason, the junction temperature increases up to 150°C, the thermal shut-down
simply reduces the power dissipation and the
current consumption.
The maximum allowable power dissipation depends upon the size of the external heatsink (i.e. its
thermal resistance); fig. 31 shows this dissipable
power as a function of ambient temperature for
different thermal resistance.
Figure 30. Output power and
dra i n cu rre nt vs. case
temperature
Figure 31. Maximum allow able
power dissipation vs. ambient
temperature
MOUNTING INSTRUCTIONS
The power dissipated in the circuit must be removed by adding an external heatsink.
Thanks to the Multiwatt® package attaching the
heatsink is very simple, a screw or a compression
12/15
spring (clip) being sufficient. Between the heatsink
and the package it is better to insert a layer of silicon
grease, to optimize the thermal contact; no electrical isolation is needed between the two surfaces.
TDA1910
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
5
0.197
B
2.65
0.104
C
1.6
D
OUTLINE AND
MECHANICAL DATA
0.063
1
0.039
E
0.49
0.55
0.019
0.022
F
0.88
0.95
0.035
0.037
G
1.45
1.7
1.95
0.057
0.067
0.077
G1
16.75
17
17.25
0.659
0.669
0.679
H1
19.6
0.772
H2
20.2
0.795
L
21.9
22.2
22.5
0.862
0.874
0.886
L1
21.7
22.1
22.5
0.854
0.87
0.886
L2
17.4
18.1
0.685
L3
17.25
17.5
17.75
0.679
0.689
0.713
0.699
L4
10.3
10.7
10.9
0.406
0.421
0.429
L7
2.65
2.9
0.104
M
4.25
4.55
4.85
0.167
0.179
0.191
M1
4.73
5.08
5.43
0.186
0.200
0.214
S
1.9
2.6
0.075
0.102
S1
1.9
2.6
0.075
0.102
Dia1
3.65
3.85
0.144
0.152
0.114
Multiwatt11 V
13/15
TDA1910
DIM.
A
B
C
E
E1
F
G
G.1
G2
G3
G4
G5
H1
H2
L1
L2
L3
L4
L5
(Inner)
L5
(Outer)
L7
R
S
S1
Dia1
MIN.
4.373
mm
TYP.
4.5
0.49
1.007
0.88
1.5
16.82
6.61
13.41
3.2
10.01
19.6
0.515
1.037
0.9
1.7
17.02
6.807
13.61
3.4
10.21
MAX.
4.627
2.65
1.6
0.55
1.07
0.95
1.9
17.22
7.01
13.81
3.6
10.41
19.28
3.61
17.25
10.3
19.58
3.81
17.5
10.6
3.4
3.75
3.6
3.9
2.65
0.75
1.9
1.9
3.65
inch
TYP.
0.177
0.019
0.040
0.035
0.059
0.662
0.260
0.528
0.126
0.394
0.772
0.020
0.041
0.035
0.067
0.670
0.268
0.536
0.134
0.402
MAX.
0.182
0.104
0.063
0.022
0.042
0.037
0.075
0.678
0.276
13.810
0.142
0.410
20.2
19.88
4.01
17.75
10.9
0.759
0.142
0.679
0.406
0.771
0.150
0.689
0.417
0.795
0.783
0.158
0.699
0.429
4
0.134
0.148
0.157
4.2
0.142
0.154
2.9
1.25
2.6
2.6
3.85
0.104
0.030
0.075
0.075
0.144
1
MIN.
0.172
4.200
0.114
0.049
0.102
0.102
0.152
0.039
V
R
OUTLINE AND
MECHANICAL DATA
Multiwatt11 H (Short leads)
V
V
G5
G4
R
A
B
C
L5
V
L1
E
L2
X
L3
G1
L4
H2
N
L7
F
G
H2
G3
G2
DETAIL X
F
H1
0.25min
0.50max
Dia.1
P
R1
14/15
E
E1
S
S1
60 to 90
MULT11LHM
TDA1910
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2003 STMicroelectronics - All rights reserved
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