BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration BF 517 LRs 1=B Q62702-F42 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage VCEO 15 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 25 Peak collector current ICM f ≥ 10 MHz Values Unit V mA 50 Ptot Total power dissipation TS ≤ 55 °C mW 280 Junction temperature Tj Ambient temperature TA - 65 + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 340 K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor Group 1 Aug-02-1996 BF 517 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-base cutoff current 15 nA - - 50 hFE IC = 5 mA, VCE = 10 V Collector-emitter saturation voltage - ICBO VCB = 15 V, IE = 0 DC current gain V 25 - 250 VCEsat IC = 10 mA, IB = 1 mA V - 0.1 0.5 AC Characteristics of any single Transistor Transition frequency fT IC = 5 mA, VCE = 10 V, f = 200 MHz Collector-base capacitance 1 0.3 0.55 0.75 - 0.25 0.4 - 1.45 - - 0.8 - Cobs VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Noise figure pF Cibo VEB = 0.5 V, IC = ic = 0 , f = 1 MHz Output capacitance - Cce VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Input capacitance 2 Ccb VCB = 5 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance GHz F dB IC = 5 mA, VCE = 10 V, f = 100 MHz ZS = 75 Ω Semiconductor Group - 2 2.5 - Aug-02-1996 BF 517 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 3 K/W - RthJS P totmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 Semiconductor Group 10 -3 10 10 1 -2 -1 10 s 10 tp 0 3 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Aug-02-1996 BF 517 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) f = 500MHz VCE = Parameter 1.3 3.0 pF 1.1 Ccb 10V 5V 3V GHz fT 1.0 0.9 2.0 0.8 2V 0.7 1.5 0.6 0.5 1.0 0.4 0.3 1V 0.5 0.2 0.7V 0.1 0.0 0.0 0 4 8 12 16 20 V 26 V CB 0 5 10 15 20 mA IC 30 Package Semiconductor Group 4 Aug-02-1996